White Electronic Designs WS1M8L-45DJIA, WS1M8L-45DJI, WS1M8L-45DJCA, WS1M8L-45DJC, WS1M8L-45CMA Datasheet

WS1M8-XXX

HI-RELIABILITY PRODUCT

2x512Kx8 DUALITHIC™ SRAM

FEATURES

■Access Times 17, 20, 25, 35, 45, 55ns

■Revolutionary, Center Power/Ground Pinout

■Packaging:

•32 pin, Hermetic Ceramic DIP (Package 300)

•36 lead Ceramic SOJ (Package 100)

•36 lead Ceramic Flatpack (Package 226)

■Organized as two banks of 512Kx8

■Commercial, Industrial and Military Temperature Ranges

■5 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

PIN CONFIGURATION FOR WS1M8-XDJX									PIN CONFIGURATION FOR WS1M8-XCX
					AND WS1M8-XFX
				36 CSOJ							32 DIP
				36 FLATPACK							TOP VIEW
				TOP VIEW
									A18		1	32		VCC
	A0			1	36		NC		A16		2	31		A15
	A1			2	35		A18		A14		3	30		A17
	A2			3	34		A17		A12		4	29
														WE
	A3			4	33		A16		A7		5	28		A13
	A4			5	32		A15
									A6		6	27		A8
				6	31
	CS1						OE		A5		7	26		A9
I/O0				7	30		I/O7
									A4		8	25		A11
I/O1				8	29		I/O6
									A3		9	24
VCC				9	28		GND							CS2
									A2		10	23		A10
GND				10	27		VCC
									A1		11	22
I/O2				11	26		I/O5								CS1
I/O3				12	25		I/O4		A0		12	21		I/O7
				13	24		A14
	WE								I/O0		13	20		I/O6
	A5			14	23		A13		I/O1		14	19		I/O5
	A6			15	22		A12		I/O2		15	18		I/O4
	A7			16	21		A11		GND		16	17		I/O3
	A8			17	20		A10
	A9			18	19
							CS2

PIN DESCRIPTION

	A0-18						Address Inputs
I/O0-7							Data Input/Output
				1-2			Chip Selects
	CS
							Output Enable
			OE
							Write Enable
		WE
	VCC						+5.0V Power
	GND						Ground

PIN DESCRIPTION

	A0-18				Address Inputs
I/O0-7					Data Input/Output
			1-2		Chip Selects
	CS
					Write Enable
		WE
	VCC				+5.0V Power
	GND				Ground

BLOCK DIAGRAM

BLOCK DIAGRAM

I / O 0 - 7

I / O 0 - 7

W E

W E

O E

A 0 - 18

A 0 - 18

512K x 8

512K x 8

512K x 8

512K x 8

C S 1

(1)

C S 1

(1)

(1)

(1)

C S

2

2

C S

NOTE:

1. CS1 and CS2 are used to select the lower and upper 512Kx8 of the device. CS1 and CS2 must not be enabled at the same time.

October 2000 Rev. 4

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White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS1M8-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	7.0	V

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Condition	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	20	pF
Output capicitance	COUT	VOUT = 0V, f = 1.0MHz	20	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

A

Output Leakage Current

ILO1

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current

ICC1

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

180

mA

CS

OE

Standby Current

ISB1

CS

= VIH,

OE

= VIH, f = 5MHz, Vcc = 5.5

40

mA

Output Low Voltage

VOL

IOL = 8mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V

1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.

LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)

(TA = -55°C to +125°C)

Parameter	Symbol		Conditions					Units
					Min	Typ	Max
Data Retention Supply Voltage	VDR		CS	≥ VCC -0.2V	2.0		5.5	V
Data Retention Current	ICCDR1			VCC = 3V		3.0	18.0*	mA

White Electronic Designs Corporation • [phone] • www.whiteedc.com

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