White Electronic Designs WMS128K8L-55DRIA, WMS128K8L-55DRI, WMS128K8L-55DRCA, WMS128K8L-55DRC, WMS128K8L-55DJMA Datasheet

WMS128K8-XXX

HI-RELIABILITY PRODUCT

128Kx8 MONOLITHIC SRAM, SMD 5962-96691

FEATURES

■Access Times 15, 17, 20, 25, 35, 45, 55ns

■Revolutionary, Center Power/Ground Pinout JEDEC Approved

•32 lead Ceramic SOJ (Package 101)

•36 lead Ceramic SOJ (Package 100)

•36 lead Ceramic Flat Pack (Package 226)

■Evolutionary, Corner Power/Ground Pinout JEDEC Approved

•32 pin Ceramic DIP (Package 300)

•32 lead Ceramic SOJ (Package 101)

•32 lead Ceramic Flat Pack (Package 206)

■32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601)

■MIL-STD-883 Compliant Devices Available

■Commercial, Industrial and Military Temperature Range

■5 Volt Power Supply

■Low Power CMOS

■2V Data Retention Devices Available (Low Power Version)

■TTL Compatible Inputs and Outputs

					REVOLUTIONARY PINOUT																EVOLUTIONARY PINOUT
				36 FLAT PACK																				32 DIP
													32 CSOJ (DR)											32 CSOJ (DE)
				36 CSOJ
																								32 FLAT PACK (FE)
				TOP VIEW									TOP VIEW											TOP VIEW
																A16
	NC			1	36	NC				A0			1	32								NC		1	32		VCC
		A0		2	35	A16				A1			2	31		A15					A16			2	31		A15
		A1		3	34	A15				A2			3	30		A14					A14			3	30		NC
		A2		4	33	A14															A12			4	29
										A3			4	29		A13											WE
		A3		5	32	A13							5									A7		5	28		A13
									CS					28		OE
				6	31																	A6		6	27		A8
		CS				OE		I/O1					6	27		I/O8
I/O0				7	30	I/O7		I/O2					7	26		I/O7						A5		7	26		A9
I/O1				8	29	I/O6		VCC					8	25		GND						A4		8	25		A11
																						A3		9	24
VCC				9	28	GND		GND					9	24		VCC											OE
GND				10	27	VCC		I/O3					10	23		I/O6						A2		10	23		A10
																						A1		11	22
I/O2				11	26	I/O5		I/O4					11	22		I/O5											CS
I/O3				12	25	I/O4																A0		12	21		I/O7
									WE				12	21		A12
				13	24	A12															I/O0			13	20		I/O6
	WE									A4			13	20		A11
		A4		14	23	A11				A5			14	19		A10					I/O1			14	19		I/O5
		A5		15	22	A10				A6			15	18		A9					I/O2			15	18		I/O4
		A6		16	21	A9				A7			16	17		A8					GND			16	17		I/O3
		A7		17	20	A8
	NC			18	19	NC															PIN DESCRIPTION
															A0-16									Address Inputs
															I/O0-7									Data Input/Output
																									Chip Select
																CS
																									Output Enable
																OE
																									Write Enable
																WE
															VCC										+5.0V Power
															GND										Ground

32 CLCC

TOP VIEW

	A12	A14	A16	NC	VCC	A15	NC
	4	3	2	1	32 31 30
A7	5						29
								WE
A6	6						28	A13
A5	7						27	A8
A4	8						26	A9
A3	9						25	A11
A2	10						24
								OE
A1	11						23	A10
A0	12						22
									CS
I/O0	13						21	I/O7
	14 15 16 17 18 19 20
	I/O1	I/O2	VSS	I/O3	I/O4	I/O5	I/O6

February 2000 Rev. 3

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WMS128K8-XXX

ABSOLUTE MAXIMUM RATINGS

TRUTH TABLE

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	7.0	V

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Condition		Package	Speed (ns)	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	32 Pin CSOJ, DIP,		15 to 55	20	pF
			Flat Pack Evolutionary
			36	Pin CSOJ, Flat Pack and	15 to 25	12	pF
			32	Pin CSOJ Revolutionary	35 to 55	20	pF
Output capicitance	COUT	VOUT = 0V, f = 1.0MHz	32 Pin CSOJ, DIP,		15 to 55	20	pF
			Flat Pack Evolutionary
			36	Pin CSOJ, Flat Pack and	15 to 25	12	pF
			32	Pin CSOJ Revolutionary	35 to 55	20	pF
			32	Pin CLCC	15 to 55	15	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

-15

-17

-20

-25

Units

Min

Max

Min Max

Min Max

Min

Max

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

10

10

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

10

10

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

150

150

150

150

mA

CS

OE

Standby Current

ISB

= VIH, f = 5MHz, Vcc = 5.5

20

20

20

15

mA

CS

= VIH,

OE

Output Low Voltage

VOL

IOL = 8mA, VCC = 4.5

0.4

0.4

0.4

0.4

V

Output High Voltage

VOH

IOH = -4.0mA, VCC = 4.5

2.4

2.4

2.4

2.4

V

Parameter

Sym

Conditions

-35

-45

-55

Units

Min

Max

Min

Max

Min

Max

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

10

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

10

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

150

150

150

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, Vcc = 5.5

15

15

15

mA

CS

OE

Output Low Voltage

VOL

IOL = 2.1mA, VCC = 4.5

0.4

0.4

0.4

V

Output High Voltage

VOH

IOH = -1.0mA, VCC = 4.5

2.4

2.4

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

White Electronic Designs Corporation • [phone] • www.whiteedc.com

2

WMS128K8-XXX

AC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol	-15			-17				-20			-25		-35		-45		-55		Units
Read Cycle		Min		Max	Min		Max	Min		Max	Min		Max	Min Max		Min Max		Min Max
Read Cycle Time	tRC	15			17			20			25			35		45		55		ns
Address Access Time	tAA			15			17			20			25		35		45		55	ns
Output Hold from Address Change	tOH	0			0			0			0			0		0		0		ns
Chip Select Access Time	tACS			15			17			20			25		35		45		55	ns
Output Enable to Output Valid	tOE			10			10			12			15		20		25		30	ns
Chip Select to Output in Low Z	tCLZ1	3			3			3			3			3		3		3		ns
Output Enable to Output in Low Z	tOLZ1	0			0			0			0			0		0		0		ns
Chip Disable to Output in High Z	tCHZ1			10			10			10			12		20		20		20	ns
Output Disable to Output in High Z	tOHZ1			10			10			10			12		20		20		20	ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-15		-17		-20		-25		-35			-45			-55		Units
Write Cycle		Min		Max	Min Max		Min Max		Min Max		Min Max		Min		Max	Min		Max
Write Cycle Time	tWC	15			17		20		25		35		45			55			ns
Chip Select to End of Write	tCW	14			14		15		20		25		30			45			ns
Address Valid to End of Write	tAW	14			15		15		20		25		30			45			ns
Data Valid to End of Write	tDW	10			10		12		15		20		25			25			ns
Write Pulse Width	tWP	14			14		15		20		25		30			45			ns
Address Setup Time	tAS	0			0		0		0		0		0			0			ns
Address Hold Time	tAH	0			0		0		0		0		0			0			ns
Output Active from End of Write	tOW1	3			3		3		3		4		4			4			ns
Write Enable to Output in High Z	tWHZ1			10		10		12		15		20			25			25	ns
Data Hold Time	tDH	0			0		0		0		0		0			0			ns

1. This parameter is guaranteed by design but not tested.

AC TEST CIRCUIT

	I OL
	Current Source
D.U.T.	VZ ≈1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 3.0	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

3	White Electronic Designs Corporation • [phone] • www.whiteedc.com