White Electronic Designs WS512K32NBV-15H2IE, WS512K32NBV-15H2CEA, WS512K32NBV-15H2CE, WS512K32NBV-15G2MEA, WS512K32NBV-15G2ME Datasheet

WS512K32BV-XXXE

512Kx32 3.3V SRAM MODULE PRELIMINARY*

FEATURES

■Access Times of 15†, 17, 20ns

■MIL-STD-883 Compliant Devices Available

■Low Voltage Operation

■Packaging

•66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402)

•68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint

■Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8

■Radiation Tolerant with Epitaxial Layer Die

■Commercial, Industrial and Military Temperature Ranges

■3.3 Volt Power Supply

■BiCMOS

■TTL Compatible Inputs and Outputs

■Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

■Weight

WS512K32BV-XG2XE - 8 grams typical WS512K32NBV-XH2XE - 13 grams typical

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

†This speed is Advanced information.

PIN CONFIGURATION FOR WS512K32NBV-XH2XE

TOP VIEW

PIN DESCRIPTION

1

12

23

34

45

56

I/O0-31

Data Inputs/Outputs

I/O8

WE2

I/O15

I/O24

VCC

I/O31

A0-18

Address Inputs

I/O9

CS2

I/O14

I/O25

CS4

I/O30

WE1-4

Write Enables

CS1-4

Chip Selects

I/O10

GND

I/O13

I/O26

WE4

I/O29

OE

Output Enable

A13

I/O11

I/O12

A6

I/O27

I/O28

VCC

Power Supply

A14

A10

OE

A7

A3

A0

GND

Ground

NC

Not Connected

A15

A11

A18

NC

A4

A1

A16

A12

WE1

A8

A5

A2

BLOCK DIAGRAM

WE1CS1

WE2CS2

WE3CS3

WE4CS4

A17

VCC

I/O7

A9

WE3

I/O23

OE

A 0 - 1 8

I/O0

CS1

I/O6

I/O16

CS3

I/O22

512K x 8

512K x 8

512K x 8

512K x 8

I/O1

NC

I/O5

I/O17

GND

I/O21

I/O2

I/O3

I/O4

I/O18

I/O19

I/O20

8

8

8

8

11

22

33

44

55

66

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

4

MODULES SRAM

February 1998

1

White Microelectronics • Phoenix, AZ • [phone]

WS512K32BV-XXXE

4

MODULES SRAM

PIN CONFIGURATION FOR WS512K32BV-XG2XE

TOP VIEW

NC

A0

A1

A2

A3

A4

A5

CS3

GND

CS4

WE1

A6

A7

A8

A9

A10

VCC

9

8

7

6

5

4

3

2

1

68 67 66 65 64 63 62 61

I/O0

10

60

I/O16

I/O1

11

59

I/O17

I/O2

12

58

I/O18

I/O3

13

57

I/O19

I/O4

14

56

I/O20

I/O5

15

55

I/O21

I/O6

16

54

I/O22

I/O7

17

53

I/O23

GND

18

52

GND

I/O8

19

51

I/O24

I/O9

20

50

I/O25

I/O10

21

49

I/O26

I/O11

22

48

I/O27

I/O12

23

47

I/O28

I/O13

24

46

I/O29

I/O14

25

45

I/O30

I/O15

26

44

I/O31

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

VCC

A11

A12

A13

A14

A15

A16

CS1

OE

CS2

A17

WE2

WE3

WE4

A18

NC

NC

PIN DESCRIPTION

0.940"

The White 68 lead G2 CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2 has the TCE and lead inspection advantage of the CQFP form.

I/O0-31							Data Inputs/Outputs
		A0-18					Address Inputs
					1-4		Write Enables
	WE
				1-4			Chip Selects
		CS
							Output Enable
			OE
		Vcc					Power Supply
		GND					Ground
			NC				Not Connected

BLOCK DIAGRAM

WE1CS1

WE2CS2

WE3CS3

WE4CS4

OE

A 0 - 1 8

512K x 8

512K x 8

512K x 8

512K x 8

8	8	8	8
I/O 0 - 7	I/O 8 - 15	I/O 16 - 23	I/O 24 - 31

White Microelectronics • Phoenix, AZ • [phone]

2

WS512K32BV-XXXE

ABSOLUTE MAXIMUM RATINGS

TRUTH TABLE

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	4.6	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	4.6	V

RECOMMENDED OPERATING CONDITIONS

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V

	Parameter					Symbol	Conditions	Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
	OE
					1-4 capacitance	CWE	VIN = 0 V, f = 1.0 MHz		pF
	WE
					HIP (PGA)			20
					CQFP G2			20
			1-4 capacitance			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	50	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, VSS = 0V, TA = -55°C to +125°C)

Parameter	Sym					Conditions	Min	Max	Units
Input Leakage Current	ILI	VIN = GND to VCC						10	A
Output Leakage Current	ILO			= VIH,		= VIH, VOUT = GND to VCC		10	A
			CS		OE
Operating Supply Current (x 32 Mode)	ICC x 32		CS	= VIL,	OE	= VIH, f = 5MHz, VCC = 3.6V		480	mA
Standby Current	ISB					= VIH, f = 5MHz, VCC = 3.6V		110	mA
			CS	= VIH,	OE
Output Low Voltage	VOL	IOL = 8mA						0.4	V
Output High Voltage	VOH	IOH = -4.0mA					2.4		V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

4

MODULES SRAM

3	White Microelectronics • Phoenix, AZ • [phone]