White Electronic Designs WE512K16-150G4I, WE512K16-150G4CA, WE512K16-150G4C, WE512K16-140G4QA, WE512K16-140G4Q Datasheet

			WE512K16-XG4X
			HI-RELIABILITY PRODUCT
	512Kx16 CMOS EEPROM MODULE
	FEATURES
	■ Access Time of 140, 150, 200ns	■ Automatic Page Write Operation
	■ Packaging:	■ Page Write Cycle Time: 10ms Max
	• 68 lead, 40mm Hermetic CQFP (Package 501)	■ Data Polling for End of Write Detection
	■ Organized as 4 banks of 128Kx16	■ Hardware and Software Data Protection
	■ Write Endurance 10,000 Cycles	■ TTL Compatible Inputs and Outputs
	■ Data Retention Ten Years Minimum	■ 5 Volt Power Supply
	■ Military Temperature Range	■ 8 Built-in Decoupling Caps and Multiple Ground Pins for Low
	■ Low Power CMOS	Noise Operation
		■ Weight - 20 grams typical
	FIG. 1 PIN CONFIGURATION

TOP VIEW

				NC			A0			A1			A2			A3			A4			A5					CS1			GND			CS3			WE A6				A7		A8		A9		A10		VCC
			9			8			7			6			5			4			3					2			1			68 67 66 65 64 63 62 61
I/O0			10																																													60				NC
I/O1			11																																													59				NC
I/O2			12																																													58				INC
I/O3			13																																													57				NC
I/O4			14																																													56				NC
I/O5			15																																													55				NC
I/O6			16																																													54				NC
I/O7			17																																													53				NC
GND			18																																													52				GND
I/O8			19																																													51				NC
I/O9			20																																													50				NC
I/O10			21																																													49				NC
I/O11			22																																													48				NC
I/O12			23																																													47				NC
I/O13			24																																													46				NC
I/O14			25																																													45				NC
I/O15			26																																													44				NC
			27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
			VCC			A11			A12			A13			A14			A15			A16						CS2			OE			CS4			NC NC				NC		NC		NC		NC		NC

PIN DESCRIPTION

I/O0-15							Data Inputs/Outputs
	A0-16						Address Inputs
							Write Enable
		WE
				1-4			Chip Selects
	CS
							Output Enable
			OE
		VCC					Power Supply
	GND						Ground
		NC					Not Connected

BLOCK DIAGRAM
CS1 CS 2 CS3 CS4
A 0 - 16
OE
WE
128K x 8	128K x 8
128K x 8	128K x 8
128K x 8	128K x 8
128K x 8	128K x 8

I/O 0 - 7

I/O 8 - 1 5

NOTE:

CS1-4 are used as bank selects. During reads, only one CSx can be active at one time.

April 1999 Rev. 2

1

White Electronic Designs Corporation • Phoenix, AZ • [phone]

WE512K16-XG4X

ABSOLUTE MAXIMUM RATINGS

Parameter			Symbol		Unit
Operating Temperature			TA	-55 to +125	°C
Storage Temperature			TSTG	-65 to +150	°C
Signal Voltage Relative to GND			VG	-0.6 to +6.25	V
Voltage on		and A9		-0.6 to +13.5	V
	OE

NOTE:

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.0	Vcc + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

TRUTH TABLE

	CS			OE			WE		Mode		Data I/O
	H			X			X		Standby		High Z
	L			L			H		Read		Data Out
	L			H			L		Write		Data In
	X			H			X		Out Disable		High Z/Data Out
	X			X			H		Write
	X			L			X		Inhibit

CAPACITANCE

(TA = +25°C)

	Parameter			Symbol	Conditions	Max	Unit
			capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
	OE
			capacitance	CWE	VIN = 0 V, f = 1.0 MHz	50	pF
	WE
	CS1-4 capacitance			CCS	VIN = 0 V, f = 1.0 MHz	25	pF
	Data I/O capacitance			CI/O	VI/O = 0 V, f = 1.0 MHz	40	pF
	Address input capacitance			CAD	VIN = 0 V, f = 1.0 MHz	70	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

µA

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

µA

CS

OE

Operating Supply Current (x16)

ICCx16

1 = VIL,

=

2-4 = VIH, f = 5MHz, VCC = 5.5

160

mA

CS

OE

CS

Chip Erase Current

ICC1

= VIL,

= VIH, f = 5MHz, VCC = 5.5

250

mA

CS

OE

Standby Current (CMOS)

ISB

= VIH,

= VIH, f = 5MHz, VCC = 5.5

5

mA

CS

OE

Output Low Voltage

VOL

IOL = 2.1mA, VCC = 4.5V

0.45

V

Output High Voltage

VOH

IOH = -400µA, VCC = 4.5V

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

FIG. 2

AC TEST CIRCUIT

I OL

Current Source

D.U.T.	VZ ≈1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 3.0	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

White Electronic Designs Corporation • Phoenix, AZ • [phone]

2

WRITE

A write cycle is initiated when OE is high and a low pulse is on WE or CS with CS or WE low. The address is latched on the falling edge of CS or WE whichever occurs last. The data is latched by the rising edge of CS or WE, whichever occurs first. A word write operation will automatically continue to completion.

WRITE CYCLE TIMING

Figures 3 and 4 show the write cycle timing relationships. A write cycle begins with address application, write enable and chip select. Chip select is accomplished by placing the CS line low. Write enable consists of setting the WE line low. The write cycle begins when the last of either CS or WE goes low.

The WE line transition from high to low also initiates an internal 150 sec delay timer to permit page mode operation. Each subsequent WE transition from high to low that occurs before the completion of the 150 sec time out will restart the timer from zero. The operation of the timer is the same as a retriggerable one-shot.

WE512K16-XG4X

AC WRITE CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Write Cycle Parameter					Symbol	Min	Max	Unit
Write Cycle Time, TYP = 6ms					tWC		10	ms
Address Set-up Time					tAS	10		ns
Write Pulse Width	(WE	or	CS)		tWP	120		ns
Chip Select Set-up Time					tCS	0		ns
Address Hold Time					tAH	100		ns
Data Hold Time					tDH	10		ns
Chip Select Hold Time					tCSH	0		ns
Data Set-up Time					tDS	100		ns
Output Enable Set-up Time					tOES	10		ns
Output Enable Hold Time					tOEH	10		ns
Write Pulse Width High					tWPH	50		ns

3	White Electronic Designs Corporation • Phoenix, AZ • [phone]