Texas Instruments TCM1050P, TCM1050DR, TCM1030P, TCM1050D, TCM1030DR Datasheet

TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS

SCTS040B ± JUNE 1989 ± REVISED JUNE 1997

DMeet or Exceed Bell Standard LSSGR Requirements

DExternally-Controlled Negative Firing Voltage . . . ±90 V Max

DAccurately Controlled, Wide Negative Firing Voltage Range . . . ±5 V to ±85 V

DPositive Surge Current (see Note 1):

	TCM1030	TCM1050
10/1000	16 A	30 A
10/160	25 A	45 A
2/10	35 A	50 A

D OR P PACKAGE

(TOP VIEW)

TIP			1	8		TIP
VS			2	7		GND
NC			3	6		GND
RING			4	5		RING

NC ± No internal connection

The D package is available taped and reeled. Add R suffix (i.e., TCM1030DR).

DNegative Surge Current (see Note 1):

	TCM1030	TCM1050
10/1000	±16 A	±25 A
10/160	±25 A	±29 A
2/10	±35 A	±36 A

DHigh Holding Current

±TCM1030 . . . 100 mA Min

±TCM1050 . . . 150 mA Min

description

The TCM1030 and TCM1050 dual transient-voltage suppressors are designed specifically for telephone line card protection against lightning and transients (voltage transients) induced by ac lines. One of the TIP terminals (pin 1 or 8) and one of the RING terminals (pin 4 or 5) are connected to the tip and ring circuits of a SLIC (subscriber-line interface circuit). The battery feed connections between the SLIC and the subscriber line are from the remaining TIP (pin 1 or 8) and RING (pin 4 or 5) through the TCM1030 or the TCM1050 to the tip and ring lines. Transients are suppressed between tip and ground, and ring and ground.

Positive transients are clamped by diodes D1 and D2. Negative transients that are more negative than VS cause the SCRs, Q1 and Q2, to crowbar. The high holding current of the SCRs prevent dc latchup as the transient subsides.

The TCM1030 and TCM1050 are characterized for operation from ±40°C to 85°C.

NOTE 1: The notation 10/1000 refers to a waveshape having tr = 10 μs and tw = 1000 μs ending at 50% of the peak value. The notation 10/160 is tr = 10 μs and tw = 160 μs. The notation 2/10 is tr = 2 μs and tw = 10 μs.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1997, Texas Instruments Incorporated

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TCM1030, TCM1050

DUAL TRANSIENT-VOLTAGE SUPPRESSORS

SCTS040B ± JUNE 1989 ± REVISED JUNE 1997

functional block diagram

1	8	TIP
TIP
Trip	D1
	Q1
Circuit
	7	GND
2
VS	6
		GND
Trip	Q2
Circuit
	D2
4	5	RING
RING

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

TCM1030 nonrepetitive peak surge current (see Note 1): 10/1000 . . . . . . . . . .		. . . . . . . . . . .	. . . . . . . . . ± 16 A
	10/160 . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . ± 25 A
	2/10 . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . ± 35 A
TCM1050 nonrepetitive peak positive surge current:	10/1000 . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . . 30	A
(see Note 1)	10/160 . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . . 45	A
	2/10 . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . . 50	A
TCM1050 nonrepetitive peak negative surge current:	10/1000 . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . ±25 A
(see Note 1)	10/160 . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . ±29 A
	2/10 . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . ±36 A
Nonrepetitive peak surge current, tw = 10 ms, half sinewave (see Note 2) . . . .		. . . . . . . . . . . .	. . . . . . . . . . 5	A
Continuous 60-Hz sinewave at 1 A . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . . . . 2 s
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	±40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . .	. . . . . . . . . . .	±40°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . .			. . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1 The notation 10/1000 refers to a waveshape having tr = 10 μs and tw = 1000 μs ending at 50% of the peak value. The notation 10/160 is tr = 10 μs and tw = 160 μs. The notation 2/10 is tr = 2 μs and tw = 10 μs.

2.This value applies when the case temperature is at or below 85°C. The surge current may be repeated after the device has returned to thermal equilibrium.

DISSIPATION RATING TABLE

	PACKAGE	TA ≤ 25°C	OPERATING FACTOR	TA = 85°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING
	D	725 mW	5.8 mW/°C	377 mW
	P	1000 mW	8.0 mW/°C	520 mW

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TCM1030, TCM1050

DUAL TRANSIENT-VOLTAGE SUPPRESSORS

SCTS040B ± JUNE 1989 ± REVISED JUNE 1997

electrical characteristics over operating free-air temperature range (unless otherwise noted)

	PARAMETER	TEST CONDITIONS			TCM1030			TCM1050		UNIT
				MIN	TYP²	MAX	MIN	TYP²	MAX
	Forward clamping voltage	IFM = 1-A transient			1.2	2		1.2	2
VCF		IFM = 10-A transient			2.5	4		2	4	V
	(diode forward voltage) (see
		IFM = 16-A transient			4	5		2.5	5
	Note 3)
		IFM = 30-A transient		Ð	Ð	Ð		3.1	5
	Reverse clamping voltage	ITM = 1-A transient			±1.2	± 2		±1.2	± 2
VC(R)		ITM = 10-A transient			± 2.5	± 4		± 2.5	± 4	V
	(SCR on-state voltage) (see
		ITM = 16-A transient			± 4	± 5		± 3	± 5
	Note 3)
		ITM = 30-A transient		Ð	Ð	Ð		± 4.8	± 7
II(trip)	Trip current (see Note 4)	VS = ± 50 V		± 100		± 325	± 100		± 325	mA
IH	Holding current	VS = ± 50 V		± 100			± 150			mA
		VS = ± 50 V,	I = trip current	± 50		± 55	± 50		± 55
VI(trip)	Trip voltage	VS = ± 65 V,	I = trip current	± 65		± 70	± 65		± 70	V
		VS = ± 85 V,	I = trip current	Ð	Ð	Ð	± 85		± 90
II(stby)	Standby current	TIP and RING at ± 85 V or GND,				± 5			± 5	μA
		VS = ± 85 V
	Transient overshoot voltage	VS = ± 50 V,	tr = 10 ns		2.5			2.5		V
Coff	Off-state (high impedance)	TIP and RING at ± 50 V			25			25		pF
	capacitance	TIP and RING at GND			50			50
dv/dt	Critical rate of rise of off-state	VS open,	VS = ± 50 V		± 1			± 1		kV/μs
	voltage (see Note 5)

² All typical values are at TA = 25°C.

NOTES: 3. The current flows through one TIP (or RING) terminal and one of the GND terminals. The voltage is measured between the other TIP (or RING) terminal and the other GND terminal. Measurement time ≤ 1 ms.

4.The negative value of trip current refers to the current flowing out of TIP or RING on the line side that is sufficient in magnitude to trigger the SCRs. Measurement time ≤ 1 ns.

5.The critical dv/dt is measured using a linear rate of rise with the maximum voltage limited to ± 50 V with VS connected to TIP or RING being measured.

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