TEXAS INSTRUMENTS THS3061, THS3062 Technical data

	THS3061
www.ti.com	THS3062

SLOS394A – JULY 2002 – OCTOBER 2002

LOW DISTORTION, HIGH SLEW RATE CURRENT

FEEDBACK AMPLIFIERS

FEATURES

DUnity Gain Bandwidth: 300 MHz

D0.1 dB Bandwidth: 120 MHz (G=2)

DHigh Slew Rate: 7000 V/µ s

DHD3 at 10 MHz: –81 dBc (G=2, RL = 150 Ω )

DHigh Output Current: ± 145 mA into 50 Ω

DPower Supply Voltage Range: ± 5 V to ± 15 V

APPLICATIONS

DHigh-Speed Signal Processing

DTest and Measurement Systems

DVDSL Line Driver

DHigh-Voltage ADC Preamplifier

DVideo Line Driver

The THS3061 and THS3062 provide well-regulated ac performance characteristics with power supplies ranging from ± 5-V operation up to ± 15-V supplies. Most notable, the 0.1-dB flat bandwidth is exceedingly high, reaching beyond 100 MHz, and the THS306x has less than 0.3 dB of peaking in the frequency response when configured in unity gain. The unity gain bandwidth of 300 MHz allows for excellent distortion characteristics at 10 MHz. The flexibility of the current feedback design allows for a 220-MHz, –3-dB bandwidth in a gain of 10 indicating excellent performance even at high gains.

The THS306x consumes 8.3-mA per channel quiescent current at room temperature and has the capability of producing up to ± 145 mA of output current. The THS3061 is packaged in an 8-pin SOIC and an 8-pin MSOP with PowerPAD . The THS3062 is available in an 8-pin SOIC with PowerPAD and an 8-pin MSP with PowerPAD.

DESCRIPTION

The THS3061 (single) and THS3062 (dual) are high-voltage, high slew-rate current feedback amplifiers utilizing Texas Instruments BICOM-1 process. Designed for low-distortion with a high slew rate of 7000 V/ s, the THS306x amplifiers are ideally suited for applications requiring large, linear output signals such as video line drivers and VDSL line drivers.

RELATED DEVICES AND DESCRIPTIONS

THS3001 Low Distortion Current Feedback Amplifier

THS3112 Dual Current Feedback Amplifier With 175 mA Drive

THS3122 Dual Current Feedback Amplifier With 350 mA Drive

OPA691 Wideband Current Feedback Amplifier With 350 mA

Drive

SLEW RATE vs

OUTPUT STEP

	8000
		G = 5
	7000	VCC = ± 15
s	6000	Rf = 375 Ω
		TA = 25° C
– V/	5000
Rate
	4000			VCC = ± 15
Slew
	3000
SR –
	2000
	1000
	0
	0	5	10	15	20	25

Output Step – VPP

HARMONIC DISTORTION

			vs
			FREQUENCY
	–20
		G = 1
	–30	VCC = ± 15 V
dB	–40	VCC = ± 5 V
		RL = 1 kΩ
–
		Rf = 750 Ω
Distortion	–50
		VO = 2VPP
	–60		2nd HD
Harmonic	–70
	–80
				3rd HD
	–90
	–100
	100 k		1 M	10 M	100 M
		f – Frequency – Hz

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Products	Copyright 2002, Texas Instruments Incorporated
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.

THS3061

THS3062

www.ti.com

SLOS394A – JULY 2002 – OCTOBER 2002

ABSOLUTE MAXIMUM RATINGS

This integrated circuit can be damaged by ESD. Texas

Instruments recommends that all integrated circuits be

over operating free-air temperature range unless otherwise noted(1)

handled with appropriate precautions. Failure to observe

UNIT

proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to

Supply voltage, VS±

16.5 V

complete device failure. Precision integrated circuits may be more

Input voltage, VI

±

VS

susceptible to damage because very small parametric changes could

Output current, IO

200 mA

cause the device not to meet its published specifications.

Differential input voltage, VID

± 3 V

PACKAGE DISSIPATION RATINGS

Continuous power dissipation

See Dissipation Rating Table

Maximum junction temperature, TJ

150° C

θ JC

θ JA

POWER RATING

PACKAGE

(T

= 125° C)

Operating free-air temperature range, TA

–40° C to 85° C

(° C/W)

(° C/W)

J

TA ≤ 25° C

TA = 85° C

Storage temperature range, Tstg

–65° C to 150° C

D(8 pin)(1)

38.3

95

1.05 W

0.42 W

Lead temperature

300° C

DDA (8 pin)

9.2

45.8

2.18 W

0.87 W

1,6 mm (1/16 inch) from case for 10 seconds

(1) Stresses above these ratings may cause permanent damage.

DGN (8 pin)(2)

4.7

58.4

1.71 W

0.68 W

Exposure to absolute maximum conditions for extended periods

(1) This data was taken using the JEDEC High-K test PCB. For the

may degrade device reliability. These are stress ratings only, and

JEDEC Low-K test PCB, θ JA is 167° C/W with power rating at

functional operation of the device at these or any other conditions

TA = 25° C of 0.6 W.

beyond those specified is not implied.

(2) This data was taken using 2 oz. trace and copper pad that is

(2) The THS306x may incorporate a PowerPAD on the underside of

soldered directly to a 3 in. x 3 in. PCB.

the chip. This acts as a heatsink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure

RECOMMENDED OPERATING CONDITIONS

to do so may result in exceeding the maximum junction

temperature which could permanently damage the device. See TI

MIN

MAX

UNIT

technical brief SLMA002 for more information about utilizing the

Dual supply

± 5

± 15

PowerPAD thermally enhanced package.

Supply voltage

V

Single supply

10

30

Operating free-air temperature, TA

–40

85

° C

PACKAGE/ORDERING INFORMATION

ORDERABLE PACKAGE AND NUMBER

NUMBER OF CHANNELS

(OPERATING RANGE FROM –40° C TO 85° C)

PLASTIC SOIC-8(1)

PLASTIC SOIC-8(1)

PLASTIC MSOP-8(1)

PACKAGE MARKING

(D)

PowerPAD (DDA)

PowerPAD (DGN)

1

THS3061D

—

THS3061DGN

BIB

2

THS3062D

THS3062DDA

THS3062DGN

BIC

(1) This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., THS3062DGNR).

PIN ASSIGNMENTS

TOP VIEW														D, DGN	TOP VIEW														D, DDA, DGN
				THS3061															THS3062
NC				1			8							NC	1VOUT				1				8						VS+
VIN–				2						7				VS+	1VIN–				2							7			2VOUT
V				3						6				VOUT	1VIN+														2VIN–
	IN+																		3							6
VS–				4			5							NC	VS–				4							5			2VIN+
NC – No internal connection

2

										THS3061
www.ti.com										THS3062
					SLOS394A – JULY 2002 – OCTOBER 2002
ELECTRICAL CHARACTERISTICS
VS = ± 15 V: Rf = 560 Ω , RL = 150 Ω , and G = +2 unless otherwise noted
					THS3061, THS3062
PARAMETER		TEST CONDITIONS	TYP		OVER TEMPERATURE
			25° C	25° C	0° C to	–40° C	UNITS			MIN/TYP/
					70° C	to 85° C				MAX
AC PERFORMANCE
	G = +1, Rf= 750 Ω		300
Small-signal bandwidth	G = +2, Rf = 560 Ω		275				MHz			Typ
(VO = 100 mVPP, Peaking < 0.3 dB)	G = +5, R = 357 Ω		260
		f
	G = +10, Rf = 200 Ω		220
Bandwidth for 0.1 dB flatness	G = +2, VO = 100mVpp		120				MHz			Typ
Peaking at a gain of +1	VO = 100 mVpp		0.3				dB			Typ
Large-signal bandwidth	G = +2, VO = 4 Vpp		120				MHz			Typ
Slew rate (25% to 75% level)	G = +5, 20 V Step		7000				V/µ	s		Typ
	G = +2, 10 V Step		5700
Rise and fall time	G = +2, VO = 10 V Step		1				ns			Typ
Settling time to 0.1%	G = –2, VO = 2 V Step		30				ns			Typ
0.01%	G = –2, VO = 2 V Step		125				ns			Typ
Harmonic distortion	G = +2, f = 10 MHz, VO = 2 Vpp
2nd harmonic	RL = 150 Ω		–78				dBc			Typ
	RL = 1 kΩ		–73
3rd harmonic	RL = 150 Ω		–81				dBc			Typ
	RL = 1 kΩ		–82
3rd order intermodulation distortion	G = +2, fc = 10 MHz,
	V	= 2 V	–93				dBc			Typ
	O	pp(envelope)
	∆ f = 200 kHz
Input voltage noise	f > 10 kHz		2.6				nV/√	Hz		Typ
Input current noise (noninverting)	f > 10 kHz		20				pA/√	Hz		Typ
Input current noise (inverting)	f > 10 kHz		36				pA/√	Hz		Typ
Differential gain (NTSC, PAL)	G = +2, RL = 150 Ω		0.02%							Typ
Differential phase (NTSC, PAL)	G = +2, RL = 150 Ω		0.01°							Typ
DC PERFORMANCE
Open-loop transimpedance gain	VO = 0 V, RL = 1 kΩ		1	0.7	0.6	0.6	MΩ			Min
Input offset voltage	VCM = 0 V		± 0.7	± 3.5	± 4.4	± 4.5	mV			Max
Average offset voltage drift	VCM = 0 V				± 10	± 10	µ V/° C			Typ
Input bias current (inverting)	VCM = 0 V		± 2.0	± 20	± 32	± 35	µ A			Max
Average bias current drift (–)	VCM = 0 V				± 25	± 30	nA/° C			Typ
Input bias current (noninverting)	VCM = 0 V		± 6.0	± 25	± 38	± 40	µ A			Max
Average bias current drift (+)	VCM = 0 V				± 45	± 50	nA/° C			Typ
INPUT
Common-mode input range			± 13.9	± 13.1	± 13.1	± 13.1	V			Min
Common-mode rejection ratio	VCM = ± 0.5 V		72	60	58	58	dB			Min
Input resistance	Noninverting		518				kΩ			Typ
	Inverting		71				Ω			Typ
Input capacitance	Noninverting		1				pF			Typ

3

THS3061

THS3062										www.ti.com
SLOS394A – JULY 2002 – OCTOBER 2002
ELECTRICAL CHARACTERISTICS (continued)
VS = ± 15 V: Rf = 560 Ω , RL = 150 Ω	, and G = +2 unless otherwise noted
					THS3061, THS3062
PARAMETER		TEST CONDITIONS	TYP			OVER TEMPERATURE
			25° C	25° C	0° C to		–40° C		UNITS		MIN/TYP/
					70° C		to 85° C				MAX
OUTPUT
Voltage output swing		RL = 1 kΩ	± 13.7	± 13.4	±	13.4	±	13.3	V		Min
		RL = 150 Ω	± 13	± 12.6	±	12.4	±	12.3
Current output, sourcing		RL = 50 Ω	145	140		135		130	mA		Min
Current output, sinking		RL = 50 Ω	–145	–140	–135		–130		mA		Min
Closed-loop output impedance		G = +1, f = 1 MHz	0.1						Ω		Typ
POWER SUPPLY
Specified operating voltage			± 15						V		Typ
Maximum operating voltage				± 16.5	±	16.5	±	16.5	V		Max
Maximum quiescent current/channel			8.3	10	11.7			12	mA		Max
Minimum quiescent current/channel			8.3	6.1		6		6	mA		Min
Power supply rejection (+PSRR)		VS+ = 14.50 V to 15.50 V	76	65		63		63	dB		Min
Power supply rejection (–PSRR)		VS– = –14.50 V to –15.50 V	74	65		63		63	dB		Min

4

										THS3061
www.ti.com										THS3062
					SLOS394A – JULY 2002 – OCTOBER 2002
ELECTRICAL CHARACTERISTICS
VS = ± 5 V: Rf = 560 Ω , RL = 150 Ω , and G = +2 unless otherwise noted
					THS3061, THS3062
PARAMETER		TEST CONDITIONS	TYP		OVER TEMPERATURE
			25° C	25° C	0° C to	–40° C		UNITS		MIN/TYP/
					70° C	to 85°	C			MAX
AC PERFORMANCE
	G = +1, Rf= 750 Ω		275
Small-signal bandwidth	G = +2, Rf = 560 Ω		250					MHz		Typ
(VO = 100 mVPP, peaking < 0.3 dB)	G = +5, R = 383 Ω		230
		f
	G = +10, Rf = 200 Ω		210
Bandwidth for 0.1 dB flatness	G = +2, VO = 100 mVpp		100					MHz		Typ
Peaking at a gain of +1	VO = 100 mVpp		< 0.3					dB		Typ
Large-signal bandwidth	G = +2, VO = 4 Vpp		100					MHz		Typ
Slew rate (25% to 75% level)	G = +1, 5 V Step, Rf= 750 Ω		2700					V/µ	s	Typ
	G = +5, 5 V Step, Rf= 357 Ω		1300
Rise and fall time	G = +2, VO = 5 V Step		2					ns		Typ
Settling time to 0.1%	G = –2, VO = 2 V Step		20					ns		Typ
0.01%	G = –2, VO = 2 V Step		160
Harmonic distortion	G = +2, f = 10 MHz, VO = 2 Vpp
2nd harmonic	RL = 150 Ω		–76					dBc		Typ
	RL = 1 kΩ		–70
3rd harmonic	RL = 150 Ω		–79					dBc		Typ
	RL = 1 kΩ		–77
3rd order intermodulation distortion	G = +2, fc = 10 MHz,
	V	= 2 V	–91					dBc		Typ
	O	pp(envelope)
	∆ f = 200 kHz
Input voltage noise	f > 10 kHz		2.6					nV/√	Hz	Typ
Input current noise (noninverting)	f > 10 kHz		20					pA/√	Hz	Typ
Input current noise (inverting)	f > 10 kHz		36					pA/√	Hz	Typ
Differential gain (NTSC, PAL)	G = +2, RL = 150 Ω		0.025%							Typ
Differential phase (NTSC, PAL)	G = +2, RL = 150 Ω		0.01°							Typ
DC PERFORMANCE
Open-loop transimpedance gain	VO = 0 V, RL = 1 kΩ		0.8	0.6	0.5	0.5		MΩ		Min
Input offset voltage	VCM = 0 V		± 0.3	± 3.5	± 4.4	± 4.5		mV		Max
Average offset voltage drift	VCM = 0 V				± 9	± 9		µ V/° C		Typ
Input bias current (inverting)	VCM = 0 V		± 2.0	± 20	± 32	± 35		µ A		Max
Average bias current drift (–)	VCM = 0 V				± 20	± 25		nA/° C		Typ
Input bias current (noninverting)	VCM = 0 V		± 6.0	± 25	± 38	± 40		µ A		Max
Average bias current drift (+)	VCM = 0 V				± 30	± 35		nA/° C		Typ
INPUT
Common-mode input range			± 3.9	± 3.1	± 3.1	± 3.1		V		Min
Common-mode rejection ratio	VCM = ± 0.5 V		70	60	58	58		dB		Min
Input resistance	Noninverting		518					kΩ		Typ
	Inverting		71					Ω		Typ
Input capacitance	Noninverting		1					pF		Typ

5

THS3061

THS3062							www.ti.com
SLOS394A – JULY 2002 – OCTOBER 2002
ELECTRICAL CHARACTERISTICS (continued)
VS = ± 5 V: Rf = 560 Ω , RL = 150 Ω , and G = +2 unless otherwise noted
				THS3061, THS3062
PARAMETER	TEST CONDITIONS	TYP		OVER TEMPERATURE
		25° C	25° C	0° C to	–40° C	UNITS		MIN/TYP/
				70° C	to 85° C			MAX
OUTPUT
Voltage output swing	RL = 1 kΩ	± 4.1	± 3.8	± 3.8	± 3.7	V		Min
	RL = 150 Ω	± 4.0	± 3.6	± 3.6	± 3.5
Current output, sourcing	RL = 50 Ω	63	61	60	59	mA		Min
Current output, sinking	RL = 50 Ω	–63	–61	–60	–59	mA		Min
Closed-loop output impedance	G = +1, f = 1 MHz	0.1				Ω		Typ
POWER SUPPLY
Specified operating voltage		± 5				V		Typ
Minimum operating voltage			± 4.5	± 4.5	± 4.5	V		Min
Maximum quiescent current		6.3	8.0	9.2	9.5	mA		Max
Minimum quiescent current		6.3	5.0	4.7	4.6	mA		Min
Power supply rejection (+PSRR)	VS+ = 4.50 V to 5.50 V	73	65	63	63	dB		Min
Power supply rejection (–PSRR)	VS– = –4.50 V to –5.50 V	75	65	63	63	dB		Min

PARAMETER MEASUREMENT INFORMATION

Rg		Rf		Rg	Rf
	_			VI
					_
			VO
VI	+			RT	VO
			RL		+
	50 Ω				RL

Figure 1. Noninverting Test Circuit Figure 2. Inverting Test Circuit

6

					THS3061
	www.ti.com				THS3062
				SLOS394A – JULY 2002 – OCTOBER 2002
		TYPICAL CHARACTERISTICS
Table of Graphs
					FIGURE
	Small signal frequency response				3 – 14
	Large signal frequency response				15, 16
	Harmonic distortion		vs Frequency		17 – 23
	Harmonic distortion		vs Output voltage		24 – 29
	Output impedance		vs Frequency		30
	Common-mode rejection ratio		vs Frequency		31
	Input current noise		vs Frequency		32
	Voltage noise density		vs Frequency		33
	Power supply rejection ratio		vs Frequency		34
	Common-mode rejection ratio (DC)		vs Input common-mode range		35
	Supply current		vs Power supply voltage		36, 37
	Slew rate		vs Output voltage		38, 39
	Slew rate		vs Output step		40
	Input offset voltage		vs Output voltage swing		41
	Overdrive recovery time				42, 43
	Differential gain		vs Number of 150-Ω	loads	44, 45
	Differential phase		vs Number of 150-Ω	loads	46, 47

7

THS3061

THS3062	www.ti.com
SLOS394A – JULY 2002 – OCTOBER 2002
	TYPICAL CHARACTERISTICS

SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE

3

3

2

G = 1

G = 1

R 500 Ω

G = 1

Rf 500

Ω

R 500

Ω

VCC = ± 15 V

f

2

VCC = ± 5 V

2

VCC = ± 5 V

f

1

RL = 150 Ω

1

RL = 150 Ω

1

RL = 1 kΩ

VI = 100 mVPP

VI = 100 mVPP

VI = 100 mVPP

0

– dB

0

– dB

0

– dB

Rf 1 kΩ

–1

Gain

–1

Rf 1 kΩ

Gain

–1

R 1 kΩ

Gain

Rf 750 Ω

f

–2

Rf 750 Ω

–2

–2

Rf 750 Ω

–3

–3

–3

–4

–4

–4

100 k

1 M

10 M

100M

1 G

100 k

1 M

10 M

100 M

1 G

100 k

1 M

10 M

100 M

1 G

f – Frequency – Hz

f – Frequency – Hz

f – Frequency – Hz

Figure 3

Figure 4

Figure 5

SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE

2

G = 1

10

9

Rf 500 Ω

Rf 357 Ω

VCC = ± 15 V

8

1

8

RL = 1 kΩ

7

VI = 100 mVPP

6

0

6

dB

dB

4

dB

5

–

–1

–

–

Rf 1 kΩ

Rf 1 kΩ

Gain

Gain

Gain

2

4

–2

0

Rf 560 Ω

3

Rf 750 Ω

G = 2

2

–3

VCC = ± 15, ± 5 V

–2

RL = 150 Ω

1

VI = 100 mVPP

–4

–4

100 k

1 M

10 M

100 M

1 G

0

100 k

1 M

10 M

100 M

1 G

f – Frequency – Hz

f – Frequency – Hz

Figure 6

Figure 7

		Rf 357 Ω
	Rf 1 kΩ
G = 2		Rf 560 Ω
VCC = ± 15, ± 5 V
RL = 1 kΩ
VI = 100 mVPP
100 k	1 M	10 M	100 M	1 G
	f – Frequency – Hz

Figure 8

SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE

	18						18
		G = 5
		VCC = ± 5 V		Rf 200 Ω
	16	RL = 150 Ω					16
		VI = 100 mVPP
dB	14					dB	14
Gain –	12			Rf 560 Ω		Gain –	12
	10			Rf 383 Ω			10
	8	100 k	1 M	10 M	100 M	1 G	8
			f – Frequency – Hz

Figure 9

G = 5					18
						G = 5
VCC = ± 15 V		R 200 Ω				VCC = ± 15 V		R 200 Ω
RL = 1 kΩ		f			16	R	= 150 Ω	f
VI = 100 mVPP						L
						VI = 100 mVPP
				Gain – dB	14
		Rf 560 Ω			12			Rf 560 Ω
		Rf 357 Ω			10			Rf 357 Ω
100 k	1 M	10 M	100 M	1 G	8	100 k	1 M	10 M	100 M	1 G
	f – Frequency – Hz						f – Frequency – Hz
	Figure 10						Figure 11

8