MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B10N120/D
Hybrid Power Module
Integrated Power Stage for 460 VAC Motor Drives
These modules integrate a 3±phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free±wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board.
•Short Circuit Rated 10 μs @ 125°C, 720 V
•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
•Compact Package Outline
•Access to Positive and Negative DC Bus
•UL
Recognized
ORDERING INFORMATION
Device |
Current Rating |
Package |
|
|
|
MHPM6B10N120SL |
10 |
464A±01 |
MHPM6B15N120SL |
15 |
Style 1 |
MHPM6B25N120SL |
25 |
|
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|
|
MHPM6B10N120SS |
10 |
464B±02 |
MHPM6B15N120SS |
15 |
Style 1 |
MHPM6B25N120SS |
25 |
|
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|
|
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
MHPM6B10N120
MHPM6B15N120
MHPM6B25N120
SERIES
Motorola Preferred Devices
10, 15, 25 A, 1200 V |
HYBRID POWER MODULES |
SL SUFFIX |
CASE 464A±01 |
Style 1 |
SS SUFFIX |
CASE 464B±02 |
Style 1 |
Rating |
|
Symbol |
Value |
Unit |
|
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|
|
IGBT Reverse Voltage |
|
VCES |
1200 |
V |
Gate-Emitter Voltage |
|
VGES |
± 20 |
V |
Continuous IGBT Collector Current (TC = 80°C) |
10A120 |
ICmax |
10 |
A |
|
15A120 |
|
15 |
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|
25A120 |
|
25 |
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Repetitive Peak IGBT Collector Current (1) |
10A120 |
I |
20 |
A |
|
15A120 |
C(pk) |
30 |
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25A120 |
|
50 |
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Continuous Diode Current (TC = 25°C) |
10A120 |
IFmax |
10 |
A |
|
15A120 |
|
15 |
|
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25A120 |
|
25 |
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Continuous Diode Current (TC = 80°C) |
10A120 |
IF80 |
8.3 |
A |
|
15A120 |
|
11 |
|
|
25A120 |
|
14 |
|
|
|
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Repetitive Peak Diode Current (1) |
10A120 |
I |
20 |
A |
|
15A120 |
F(pk) |
30 |
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||
|
25A120 |
|
50 |
|
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IGBT Power Dissipation per die (TC = 95°C) |
10A120 |
PD |
41 |
W |
|
15A120 |
|
50 |
|
|
25A120 |
|
65 |
|
|
|
|
|
|
Diode Power Dissipation per die (TC = 95°C) |
10A120 |
PD |
16 |
W |
|
15A120 |
|
22 |
|
|
25A120 |
|
27 |
|
|
|
|
|
|
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola IGBT Device Data |
1 |
Motorola, Inc. 1998
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating |
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Symbol |
Value |
Unit |
||||
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Junction Temperature Range |
|
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|
TJ |
± 40 to +150 |
°C |
||||
Short Circuit Duration (VCE = 720 V, TJ = 125°C) |
|
|
|
tsc |
10 |
|
|
ms |
||
Isolation Voltage, Pin to Baseplate |
|
|
|
VISO |
2500 |
|
|
Vac |
||
Operating Case Temperature Range |
|
|
|
TC |
± 40 to +95 |
°C |
||||
Storage Temperature Range |
|
|
|
Tstg |
± 40 to +150 |
°C |
||||
Mounting Torque Ð Heat Sink Mounting Holes |
|
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|
Ð |
|
1.4 |
|
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Nm |
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) |
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Characteristic |
|
Symbol |
Min |
|
Typ |
|
Max |
|
Unit |
|
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DC AND SMALL SIGNAL CHARACTERISTICS |
|
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Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) |
|
IGES |
Ð |
|
Ð |
|
± 20 |
|
μA |
|
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) |
ICES |
Ð |
|
5.0 |
|
100 |
|
μA |
||
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) |
|
VGE(th) |
5.0 |
|
6.0 |
|
7.0 |
|
V |
|
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) |
V(BR)CES |
1200 |
|
Ð |
|
Ð |
|
V |
||
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) |
VCE(SAT) |
1.7 |
|
2.35 |
|
2.9 |
|
V |
||
TJ = 125°C |
|
|
|
Ð |
|
2.69 |
|
Ð |
|
|
Forward Transconductance |
10A120 |
gfe |
Ð |
|
8.3 |
|
Ð |
|
mho |
|
|
15A120 |
|
|
Ð |
|
14 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
19 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
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Diode Forward Voltage (IF = IFmax, VGE = 0 V) |
|
VF |
1.7 |
|
2.35 |
|
3.1 |
|
V |
|
TJ = 125°C |
|
|
|
Ð |
|
1.9 |
|
Ð |
|
|
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) |
10A120 |
Cies |
Ð |
|
1880 |
|
Ð |
|
pF |
|
|
15A120 |
|
|
Ð |
|
2620 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
4770 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 |
QT |
Ð |
|
65 |
|
Ð |
|
nC |
||
|
15A120 |
|
|
Ð |
|
87 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
150 |
|
Ð |
|
|
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|
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|
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INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) |
|
|
|
|
|
|
|
|
|
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Recommended Gate Resistor (RG(on) = RG(off)) |
10A120 |
RG |
Ð |
|
82 |
|
Ð |
|
W |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
82 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
68 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
td(on) |
|
|
|
|
|
|
ns |
||
|
10A120 |
|
|
Ð |
|
174 |
|
Ð |
|
|
|
15A120 |
|
|
Ð |
|
240 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
330 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
tr |
Ð |
|
84 |
|
Ð |
|
ns |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
105 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
150 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Turn±Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
td(off) |
|
|
|
|
|
|
ns |
||
|
10A120 |
|
|
Ð |
|
640 |
|
Ð |
|
|
|
15A120 |
|
|
Ð |
|
780 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
1060 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
tf |
Ð |
|
39 |
|
47 |
|
ns |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
48 |
|
58 |
|
|
|
25A120 |
|
|
Ð |
|
70 |
|
84 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
Eon |
Ð |
|
1.5 |
|
1.8 |
|
mJ |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
2.7 |
|
3.3 |
|
|
|
25A120 |
|
|
Ð |
|
4.6 |
|
5.6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
Motorola IGBT Device Data |
MHPM6B10N120 |
MHPM6B15N120 |
MHPM6B25N120 SERIES |
|||||||
|
|
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|
Characteristic |
|
|
Symbol |
Min |
|
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
|
||
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) ± continued |
|
|
|
|
|
|
|||
Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eoff |
Ð |
|
1.1 |
1.4 |
mJ |
|
|
15A120 |
|
|
Ð |
|
1.7 |
2.1 |
|
|
|
25A120 |
|
|
Ð |
|
3.0 |
3.5 |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Reverse Recovery Time (IF = IFmax, V = 600 V) |
10A120 |
|
trr |
Ð |
|
95 |
Ð |
ns |
|
|
15A120 |
|
|
Ð |
|
110 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
124 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Peak Reverse Recovery Current (IF = IFmax, V = 600 V) |
10A120 |
|
Irrm |
Ð |
|
8.0 |
Ð |
A |
|
|
15A120 |
|
|
Ð |
|
9.7 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
11.5 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Stored Charge (IF = IFmax, V = 600 V) |
10A120 |
|
Qrr |
Ð |
|
550 |
Ð |
nC |
|
|
15A120 |
|
|
Ð |
|
600 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
740 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) |
|
|
|
|
|
|
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||
Characteristic |
|
|
Symbol |
Min |
|
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
|
|
|
Turn±On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
|
td(on) |
|
|
|
|
ns |
|
|
|
10A120 |
|
|
Ð |
|
160 |
Ð |
|
|
|
15A120 |
|
|
Ð |
|
220 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
310 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
tr |
Ð |
|
93 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
110 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
160 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
|
td(off) |
|
|
|
|
ns |
|
|
|
10A120 |
|
|
Ð |
|
680 |
Ð |
|
|
|
15A120 |
|
|
Ð |
|
850 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
1140 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
tf |
Ð |
|
51 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
60 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
76 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eon |
Ð |
|
2.0 |
Ð |
mJ |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
3.6 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
6.1 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eoff |
Ð |
|
1.5 |
Ð |
mJ |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
2.4 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
4.2 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Reverse Recovery Time (IF = IFmax, V = 600 V) |
10A120 |
|
trr |
Ð |
|
160 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
210 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
250 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Peak Reverse Recovery Current (IF = IFmax, V = 600 V) |
10A120 |
|
Irrm |
Ð |
|
11.0 |
Ð |
A |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
14.1 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
17.4 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Stored Charge (IF = IFmax, V = 600 V) |
10A120 |
|
Qrr |
Ð |
|
995 |
Ð |
nC |
|
|
15A120 |
|
|
Ð |
|
1770 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
2460 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS (Each Die) |
|
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||
Thermal Resistance Ð IGBT |
10A120 |
|
RqJC |
Ð |
|
1.1 |
1.3 |
°C/W |
|
|
15A120 |
|
|
Ð |
|
0.89 |
1.1 |
|
|
|
25A120 |
|
|
Ð |
|
0.68 |
0.85 |
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance Ð Diode |
10A120 |
|
RqJC |
Ð |
|
2.8 |
3.5 |
°C/W |
|
|
15A120 |
|
|
Ð |
|
2.0 |
2.5 |
|
|
|
25A120 |
|
|
Ð |
|
1.6 |
2.0 |
|
|
|
|
|
|
|
|
|
|
|
|
Motorola IGBT Device Data |
3 |
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