Motorola MCM72CB64SG80, MCM72CB64SG100, MCM72CB32SG66, MCM72CB64SG66, MCM72CB32SG80 Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCM72CB32/D

256KB and 512KB BurstRAM

Secondary Cache Module for Pentium

The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge memory module. The module uses four of Motorola's MCM67C518 or MCM67C618 BiCMOS BurstRAMs.

Bursts can be initiated with either address status processor (ADSP) or address status controller (ADSC). Subsequent burst addresses are generated internal to the BurstRAM by the burst advance (ADV) input pin.

Write cycles are internally self timed and are initiated by the rising edge of the clock (K) input. Eight write enables are provided for byte write control.

The cache family is designed to interface with popular Pentium cache controllers with on board tag.

PD0 ± PD2 are reserved for density and speed identification.

Pentium±style Burst Counter on Board

160 Pin Card Edge Module

Single 5 V ± 5% Power Supply

All Inputs and Outputs are TTL Compatible

Three State Outputs

Byte Parity

Byte Write Capability

Fast Module Clock Rates: 66 MHz, 80 MHz, 100 MHz

Decoupling Capacitors for each Fast Static RAM

High Quality Multi±Layer FR4 PWB With Separate Power and Ground Planes

I/Os are 3.3 V Compatible

Burndy Connector, Part Number: CELP2X80SC3Z48

BurstRAM is a trademark of Motorola.

Pentium is a trademark of Intel Corp.

MCM72CB32

MCM72CB64

160±LEAD CARD EDGE CASE 1113±01 TOP VIEW

1

42

43

80

REV 1 5/95

Motorola, Inc. 1995

PIN ASSIGNMENT

160±LEAD CARD EDGE MODULE

TOP VIEW

 

 

 

Cache

 

PD2

PD1

PD0

Size

Module

 

 

 

 

 

VSS

VSS

NC

256KB

72CB32SG

VSS

VSS

VSS

512KB

72CB64SG

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN NAMES

 

 

 

 

A3 ± A18 . . . . . . .

. . . . . . . . . . . . . . . Address Inputs

 

K0, K1 . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . Clock

 

 

 

 

±

 

 

 

 

 

 

 

 

 

 

 

 

 

Byte Write

 

W0

 

W7

 

E0,

 

 

E1

 

 

 

 

.

 

. . . .

. . .

 

. .

. . . . . . . . . . . . . . Module Enable

 

G0,

 

G1

 

 

.

 

. . . .

. . .

 

. .

. . . . . . . Module Output Enable

 

DQ0 ± DQ63 . . . . .

. . . . . Cache Data Input/Output

 

DQP0 ± DQP7 . . .

. . . . . . Data Parity Input/Output

 

 

 

 

 

 

 

 

 

 

 

Controller Address Status

 

ADSC0,

ADSC1

 

ADSP0,

 

ADSP1

. .

. . . . Processor Address Status

 

ADV0,

 

ADV1

. . . . .

. . . . . . . . . . . . . . Burst Advance

 

PD0 ± PD2 . . . . . .

. . . . . . . . . . . . Presence Detect

 

VCC5 . . . . . . . . . . .

. . . . . . . . . . + 5 V Power Supply

 

VSS . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . Ground

*No Connect for MCM72CB32/MCM72CB64

**No Connect for MCM72CB32

 

VSS

81

1

 

VSS

DQ63

82

2

 

DQ62

VCC5

83

3

 

VCC3*

DQ61

84

4

 

DQ60

VCC5

85

5

 

VCC3*

DQ59

86

6

 

DQ58

DQ57

87

7

 

DQ56

 

VSS

88

8

 

VSS

DQP7

89

9

 

DQP6

DQ55

90

10

 

DQ54

DQ53

91

11

 

DQ52

DQ51

92

12

 

DQ50

 

VSS

93

13

 

VSS

DQ49

94

14

 

DQ48

DQ47

95

15

 

DQ46

DQ45

96

16

 

DQ44

DQ43

97

17

 

DQ42

 

VSS

98

18

 

VSS

DQ41

99

19

 

DQ40

DQP5

100

20

 

DQP4

DQ39

101

21

 

DQ38

DQ37

102

22

 

DQ36

DQ35

103

23

 

DQ34

 

VSS

104

24

 

VSS

DQ33

105

25

 

DQ32

DQ31

106

26

 

DQ30

DQ29

107

27

 

DQ28

DQ27

108

28

 

DQ26

DQ25

109

29

 

DQ24

 

VSS

110

30

 

VSS

DQP3

111

31

 

DQP2

DQ23

112

32

 

DQ22

DQ21

113

33

 

DQ20

VCC5

114

34

 

VCC3*

DQ19

115

35

 

DQ18

 

VSS

116

36

 

VSS

DQ17

117

37

 

DQ16

VCC5

118

38

 

VCC3*

DQ15

119

39

 

DQ14

DQ13

120

40

 

DQ12

 

VSS

121

41

 

VSS

 

DQ11

122

42

 

DQ10

VCC5

123

43

 

VCC3*

 

DQ9

124

44

 

DQ8

DQP1

125

45

 

DQP0

VCC5

126

46

 

VCC3*

 

DQ7

127

47

 

DQ6

 

DQ5

128

48

 

DQ4

 

DQ3

129

49

 

DQ2

 

DQ1

130

50

 

DQ0

 

VSS

131

51

 

VSS

 

A3B

132

52

 

A3A

 

A4B

133

53

 

A4A

 

A5B

134

54

 

A5A

 

A6B

135

55

 

A6A

 

A7

136

56

 

A8

 

VSS

137

57

 

VSS

 

A9

138

58

 

A10

 

A11

139

59

 

A12

 

A13

140

60

 

A14

 

A15

141

61

 

A16

 

A17

142

62

 

A18**

 

VSS

143

63

 

VSS

 

*A19

144

64

 

PD0

 

PD1

145

65

 

PD2

 

K0

146

66

 

K1

 

*K2

147

67

 

K3*

 

VSS

 

148

68

 

VSS

 

WE7

149

69

 

WE6

 

WE5

150

70

 

WE4

 

WE3

151

71

 

WE2

 

WE1

152

72

 

WE0

 

VSS

 

153

73

 

VSS

ADSC1

154

74

 

ADSC0

 

E1

 

155

75

 

E0

 

ADV1

156

76

 

ADV0

 

G1

157

77

 

G0

VCC5

 

158

78

 

VCC3*

ADSP1

159

79

 

ADSP0

 

VSS

160

80

 

VSS

MCM72CB32MCM72CB64

MOTOROLA FAST SRAM

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Motorola MCM72CB64SG80, MCM72CB64SG100, MCM72CB32SG66, MCM72CB64SG66, MCM72CB32SG80 Datasheet

 

 

64K x 72 BurstRAM MEMORY MODULE BLOCK DIAGRAM

 

 

12

MCM67C618

 

A7 ± A18

A4 ± A15

LW

W0

4

A3A ± A6A

A0 ± A3

 

 

 

8

 

ADSP0

 

ADSP

 

 

DQ0 ± DQ7

DQ0 ± DQ7

ADSC0

 

ADSC

DQ8

DQP0

ADV0

 

ADV

UW

W1

 

 

 

8

DQ8 ± DQ15

K0

 

K

DQ9 ± DQ16

G0

 

G

DQ17

DQP1

E0

 

E

 

 

 

 

MCM67C618

 

 

 

A4 ± A15

LW

W2

 

 

A0 ± A3

8

 

 

 

ADSP

 

 

 

DQ0 ± DQ7

DQ16 ± DQ23

 

 

ADSC

DQ8

DQP2

 

 

ADV

UW

W3

 

 

 

8

DQ24 ± DQ31

 

 

K

DQ9 ± DQ16

 

 

G

DQ17

DQP3

 

 

E

 

 

 

 

MCM67C618

 

 

4

A4 ± A15

LW

W4

A3B ± A6B

A0 ± A3

 

 

 

8

 

ADSP1

 

ADSP

 

 

DQ0 ± DQ7

DQ32 ± DQ39

ADSC1

 

ADSC

DQ8

DQP4

ADV1

 

ADV

UW

W5

 

 

 

8

DQ40 ± DQ47

K1

 

K

DQ9 ± DQ16

G1

 

G

DQ17

DQP5

E1

 

E

 

 

 

 

MCM67C618

 

 

 

A4 ± A15

LW

W6

 

 

A0 ± A3

8

 

 

 

ADSP

 

 

 

DQ0 ± DQ7

DQ48 ± DQ55

 

 

ADSC

DQ8

DQP6

 

 

ADV

UW

W7

 

 

 

8

DQ56 ± DQ63

 

 

K

DQ9 ± DQ16

 

 

G

DQ17

DQP7

 

 

E

 

 

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3

 

32K x 72 BurstRAM MEMORY MODULE BLOCK DIAGRAM

 

A18

NC

MCM67C518

 

A7 ± A17

11

A4 ± A14

LW

W0

4

A3A ± A6A

A0 ± A3

 

 

 

8

 

ADSP0

 

ADSP

 

 

DQ0 ± DQ7

DQ0 ± DQ7

ADSC0

 

ADSC

DQ8

DQP0

ADV0

 

ADV

UW

W1

 

 

 

8

DQ8 ± DQ15

K0

 

K

DQ9 ± DQ16

G0

 

G

DQ17

DQP1

E0

 

E

 

 

 

 

MCM67C518

 

 

 

A4 ± A14

LW

W2

 

 

A0 ± A3

8

 

 

 

ADSP

 

 

 

DQ0 ± DQ7

DQ16 ± DQ23

 

 

ADSC

DQ8

DQP2

 

 

ADV

UW

W3

 

 

 

8

DQ24 ± DQ31

 

 

K

DQ9 ± DQ16

 

 

G

DQ17

DQP3

 

 

E

 

 

 

 

MCM67C518

 

 

4

A4 ± A14

LW

W4

A3B ± A6B

A0 ± A3

 

 

 

8

 

ADSP1

 

ADSP

 

 

DQ0 ± DQ7

DQ32 ± DQ39

ADSC1

 

ADSC

DQ8

DQP4

ADV1

 

ADV

UW

W5

 

 

 

8

DQ40 ± DQ47

K1

 

K

DQ9 ± DQ16

G1

 

G

DQ17

DQP5

E1

 

E

 

 

 

 

MCM67C518

 

 

 

A4 ± A14

LW

W6

 

 

A0 ± A3

8

 

 

 

ADSP

 

 

 

DQ0 ± DQ7

DQ48 ± DQ55

 

 

ADSC

DQ8

DQP6

 

 

ADV

UW

W7

 

 

 

8

DQ56 ± DQ63

 

 

K

DQ9 ± DQ16

 

 

G

DQ17

DQP7

 

 

E

 

 

MCM72CB32MCM72CB64

MOTOROLA FAST SRAM

4

 

 

MCM67C618 BLOCK DIAGRAM (See Note)

 

 

 

 

ADV

BURST LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

INTERNAL

 

 

K

 

Q0

A0′

ADDRESS

 

 

BINARY COUNTER

Q1

A0

16

ARRAY

 

A1′

 

 

 

 

64K

×18

 

 

 

 

 

MEMORY

ADSC

CLR

 

A1

 

 

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

A1 ± A0

2

 

 

 

 

A2 ± A15

 

 

 

A0 ± A15

ADDRESS

 

 

 

 

REGISTER

 

 

18

9

9

 

 

 

 

16

 

 

 

 

 

 

 

 

UW

WRITE

 

 

DATA±IN

 

REGISTER

 

 

 

LW

 

 

 

REGISTERS

 

 

 

 

 

 

 

E

ENABLE

 

 

 

DATA±OUT

 

 

 

REGISTERS

REGISTER

 

 

 

 

 

 

9

9

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

G

 

 

 

 

 

BUFFER

9

 

 

 

 

 

DQ0 ± DQ8

 

 

 

 

 

 

 

 

 

 

 

DQ9 ± DQ17

9

 

 

 

 

 

 

 

 

 

 

 

NOTE: All registers are positive±edge triggered. The ADSC or ADSP signals control the duration of the burst and the start of the next burst. When ADSP is sampled low, any ongoing burst is interrupted and a read (independent of W and ADSC) is performed using the new external address. Alternatively, an ADSP±initiated two cycle WRITE can be performed by asserting ADSP and a valid address on the first cycle, then negating both ADSP and ADSC and asserting LW and/or UW with valid data on the second cycle (see Single Write Cycle in WRITE CYCLES timing diagram).

When ADSC is sampled low (and ADSP is sampled high), any ongoing burst is interrupted and a read or write (dependent on W) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded. After the first cycle of the burst, ADV controls subsequent burst cycles. When ADV is sampled low, the internal address is advanced prior to the operation. When ADV is sampled high, the internal address is not advanced, thus inserting a wait state into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See BURST SEQUENCE TABLE. Write refers to either or both byte write enables (LW, UW).

BURST SEQUENCE TABLE (See Note)

External Address

A15 ± A2

A1

 

A0

 

 

 

 

 

 

 

 

1st Burst Address

A15 ± A2

A1

 

 

 

 

A0

2nd Burst Address

A15 ± A2

 

 

 

 

A0

A1

 

3rd Burst Address

A15 ± A2

 

 

 

 

 

 

A1

 

A0

NOTE: The burst wraps around to its initial state upon completion.

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