MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR265-2/D
Thyristors
Silicon Controlled Rectifiers
. . . designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation.
•Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters
•550 Amperes Surge Capability
•Blocking Voltage to 800 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
MCR265-2 thru MCR265-10
SCRs
55 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221A-04 (TO-220AB)
STYLE 3
Rating |
Symbol |
Value |
Unit |
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Peak Repetitive Forward and Reverse Blocking Voltage(1) |
V |
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Volts |
(TJ = 25 to 125°C, Gate Open) |
DRM |
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VRRM |
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MCR265-2 |
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50 |
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MCR265-4 |
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200 |
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MCR265-6 |
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400 |
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MCR265-8 |
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600 |
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MCR265-10 |
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800 |
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Forward Current (TC = 70°C) |
IT(RMS) |
55 |
Amps |
(All Conduction Angles) |
IT(AV) |
35 |
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Peak Non-repetitive Surge Current Ð 8.3 ms |
ITSM |
550 |
Amps |
(1/2 Cycle, Sine Wave) |
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Forward Peak Gate Power |
PGM |
20 |
Watts |
Forward Average Gate Power |
PG(AV) |
0.5 |
Watt |
Forward Peak Gate Current |
IGM |
2 |
Amps |
(300 μs, 120 PPS) |
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Operating Junction Temperature Range |
TJ |
±40 to +125 |
°C |
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents.
Motorola, Inc. 1995
MCR265-2 thru MCR265-10
THERMAL CHARACTERISTICS
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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0.9 |
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°C/W |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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60 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
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Symbol |
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Min |
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Typ |
Max |
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Unit |
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Peak Forward or Reverse Blocking Current |
TJ = 25°C |
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IDRM, IRRM |
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Ð |
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Ð |
10 |
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μA |
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(VAK = Rated VDRM or VRRM, Gate Open) |
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TJ = 125°C |
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Ð |
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Ð |
2 |
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mA |
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(1) |
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VTM |
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Ð |
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1.5 |
1.9 |
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Volts |
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Forward ªOnº Voltage |
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(ITM = 110 A) |
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Gate Trigger Current (Continuous dc) |
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IGT |
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Ð |
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20 |
50 |
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mA |
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(Anode Voltage = 12 Vdc, RL = 100 Ohms) |
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(TC = ±40°C) |
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Ð |
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40 |
90 |
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Gate Trigger Voltage (Continuous dc) |
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VGT |
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Ð |
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1 |
1.5 |
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Volts |
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(Anode Voltage = 12 Vdc, RL = 100 Ohms) |
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Gate Non-Trigger Voltage |
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VGD |
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0.2 |
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Ð |
Ð |
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Volts |
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(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) |
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Holding Current |
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IH |
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Ð |
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30 |
75 |
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mA |
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(Anode Voltage = 12 Vdc, Gate Open) |
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Turn-On Time |
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tgt |
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Ð |
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1.5 |
Ð |
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μs |
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(ITM = 55 A, IGT = 200 mAdc) |
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Critical Rate-of-Rise of Off-State Voltage |
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dv/dt |
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Ð |
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50 |
Ð |
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V/μs |
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(Gate Open, VD = Rated VDRM, Exponential Waveform) |
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1. Pulse Width p 300 μs, Duty Cycle p 2%. |
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TC, MAXIMUM CASE TEMPERATURE ( °C)
125
121
117
113
109
105
101
97
93
89
85
81
77
73
69
0
FIGURE 1 Ð AVERAGE CURRENT DERATING |
FIGURE 2 Ð MAXIMUM ON-STATE POWER DISSIPATION |
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60 |
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180° |
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54 |
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(WATTS) |
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90° |
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α |
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48 |
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60° |
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α = CONDUCTION ANGLE |
POWER |
42 |
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α = 30° |
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36 |
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dc |
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30 |
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AVERAGE |
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18 |
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α = 30° |
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dc |
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24 |
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, |
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(AV) |
12 |
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α |
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60° |
90° |
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P |
6.0 |
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α = CONDUCTION ANGLE |
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180° |
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0 |
5.0 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
4.0 |
8.0 |
12 |
16 |
20 |
24 |
28 |
32 |
36 |
40 |
0 |
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IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) |
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IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)* |
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2 |
Motorola Thyristor Device Data |
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