Motorola MMQA18VT1, MMQA13VT1, MMQA13VT3, MMQA15VT1, MMQA12VT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMQA/D

SC 59 Quad Monolithic Common Anode

Transient Voltage Suppressor for ESD Protection

This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Specification Features:

•SC-59 Package Allows Four Separate Unidirectional Configurations

•Peak Power Ð Min. 24 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform

•Peak Power Ð Min. 150 W @ 20 ms (Unidirectional), per Figure 6 Waveform

•Maximum Clamping Voltage @ Peak Pulse Current

•Low Leakage < 2.0 μA

•ESD Rating of Class N (exceeding 16 kV) per the Human Body Model

Mechanical Characteristics:

•Void Free, Transfer-Molded, Thermosetting Plastic Case

•Corrosion Resistant Finish, Easily Solderable

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel. Replace with ªT3º in the Device Number to order the 13 inch/10,000 unit reel.

THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

MMQA Series

Motorola Preferred Devices

SC-59 QUAD

TRANSIENT VOLTAGE

SUPPRESSOR

24 WATTS PEAK POWER

5.6 ± 33 VOLTS

6 5 4

1 2 3

CASE 318F-01

STYLE 1

SC-59 PLASTIC

1 6

2 5

3 4

PIN 1. CATHODE

2.ANODE

3.CATHODE

4.CATHODE

5.ANODE

6.CATHODE

Characteristic	Symbol	Value	Unit
Peak Power Dissipation @ 1.0 ms (1) @ TA ≤ 25°C	Ppk	24	Watts
Peak Power Dissipation @ 20 ms (2) @ TA ≤ 25°C	Ppk	150	Watts
Total Power Dissipation on FR-5 Board (3) @ TA = 25°C	PD	225	mW
		1.8	mW/°C
Thermal Resistance from Junction to Ambient	RθJA	556	°C/W
Total Power Dissipation on Alumina Substrate (4) @ TA = 25°C	PD	300	mW
Derate above 25°C		2.4	mW/°C
Thermal Resistance from Junction to Ambient	RθJA	417	°C/W
Junction and Storage Temperature Range	TJ, Tstg	± 55 to +150	°C
Lead Solder Temperature Ð Maximum (10 Second Duration)	TL	260	°C

1.Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.

2.Non-repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.

3.FR-5 = 1.0 x 0.75 x 0.62 in.

4.Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a trademark of the Bergquist Company

Motorola, Inc. 1996

MMQA Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)

		Breakdown Voltage				Max Reverse		Max Zener	Max Reverse	Max Reverse	Maximum
						Leakage Current				Voltage @
											Temperature
								Impedance (7)	Surge	IRSM(6)
			VZT (5)								Coefficient of
									Current	(Clamping
						IR	VR				VZ
			(V)		@ IZT					Voltage)
Device	Min		Nom	Max	(mA)	(nA)	(V)	ZZT @ IZT	IRSM(4)	VRSM	(mV/°C)
								(Ω) (mA)	(A)	(V)
MMQA5V6T1,T3	5.32		5.6	5.88	1.0	2000	3.0	400	3.0	8.0	1.26
MMQA6V2T1,T3	5.89		6.2	6.51	1.0	700	4.0	300	2.66	9.0	10.6
MMQA6V8T1,T3	6.46		6.8	7.14	1.0	500	4.3	300	2.45	9.8	10.9
MMQA12VT1,T3	11.4		12	12.6	1.0	75	9.1	80	1.39	17.3	14
MMQA13VT1,T3	12.4		13	13.7	1.0	75	9.8	80	1.29	18.6	15
MMQA15VT1,T3	14.3		15	15.8	1.0	75	11	80	1.1	21.7	16
MMQA18VT1,T3	17.1		18	18.9	1.0	75	14	80	0.923	26	19
MMQA20VT1,T3	19		20	21	1.0	75	15	80	0.84	28.6	20.1
MMQA21VT1,T3	20		21	22.1	1.0	75	16	80	0.792	30.3	21
MMQA22VT1,T3	20.9		22	23.1	1.0	75	17	80	0.758	31.7	22
MMQA24VT1,T3	22.8		24	25.2	1.0	75	18	100	0.694	34.6	25
MMQA27VT1,T3	25.7		27	28.4	1.0	75	21	125	0.615	39	28
MMQA30VT1,T3	28.5		30	31.5	1.0	75	23	150	0.554	43.3	32
MMQA33VT1,T3	31.4		33	34.7	1.0	75	25	200	0.504	48.6	37

(5)VZ measured at pulse test current IT at an ambient temperature of 25°C.

(6)Surge current waveform per Figure 5 and derate per Figure 4.

(7)ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

NOTE: SPECS LISTED ABOVE ARE PRELIMINARY

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

300							10,000
250				BIASED AT 0 V
				BIASED AT 1 V			1,000
200				BIASED AT 50%		(nA)
				OF VZ NOM							+25°C
						LEAKAGE,
150							100				+150°C
100						R
						I	10
											±40°C
50
0							0
5.6	6.8	12	20	27	33		5.6	6.8	20	27	33

VZ, NOMINAL ZENER VOLTAGE (V)	VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance	Figure 2. Typical Leakage Current

MOTOROLA

MMQA Series

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							TYPICAL CHARACTERISTICS
	300									DERATING IN % OF PEAK POWER		100
												90
POWER DISSIPATION (mW)	250											80
					ALUMINA SUBSTRATE						C
											°	70
	200										25
											=
												60
											A
											CURRENT @ T
	150											50
												40
	100											30
				FR-5 BOARD
,										PULSE	OR
D	50											20
P
												10
										PEAK
	0	0	25	50	75	100	125	150	175			0	0	25	50	75	100	125	150	175	200
				T , AMBIENT TEMPERATURE (°C)											TA, AMBIENT TEMPERATURE (°C)
				A

Figure 3. Steady State Power Derating Curve

Figure 4. Pulse Derating Curve

				PULSE WIDTH (tP) IS DEFINED			100	PEAK VALUE I		@ 8 ms
							t		RSM
				AS THAT POINT WHERE THE			r
	tr						90
				PEAK CURRENT DECAYS TO 50%		CURRENTPULSEPEAK	80		PULSE WIDTH (tP) IS DEFINED
(%)VALUE
	PEAK VALUE Ð I RSM			OF IRSM.					AS THAT POINT WHERE THE
100							70
				tr ≤ 10 ms					PEAK CURRENT DECAY = 8 ms
							60	HALF VALUE IRSM/2 @ 20 ms
		HALF VALUE Ð		IRSM			50
				2
							40
50
	tP					OF%	30	tP
							20
							10
0	1	2		3	4		0	20	40		60	80
0							0
			t, TIME (ms)						t, TIME (ms)

	Figure 5. 10 × 1000 ms Pulse Waveform
100			RECTANGULAR		200
					180
			WAVEFORM, TA = 25°C
				, PEAK SURGE POWER (W)	160
					140
					120
10					100
PEAKPOWERSURGE(W)	UNIDIRECTIONAL				80
					60
Ppk				PK	40
				P
					20
1.0	1.0	10	100	1000	0
0.1

PW, PULSE WIDTH (ms)

	Figure 6. 8 × 20 ms Pulse Waveform
			8 ×20 WAVEFORM AS PER FIGURE 6
	10 ×100 WAVEFORM AS PER FIGURE 5
5.6	6.8	12	20	27	33
			NOMINAL VZ

Figure 7. Maximum Non±Repetitive Surge	Figure 8. Typical Maximum Non±Repetitive
Power, Ppk versus PW	Surge Power, Ppk versus VBR
Power is defined as VRSM x IZ(pk) where VRSM
is the clamping voltage at IZ(pk).
MMQA Series	MOTOROLA

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