Motorola MMBT2222ALT1, MMBT2222LT3, MMBT2222LT1, MMBT2222ALT3 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBT2222LT1/D

General Purpose Transistors

NPN Silicon					COLLECTOR
						3
			1
			BASE
						2
MAXIMUM RATINGS						EMITTER
Rating	Symbol	2222		2222A				Unit
Collector± Emitter Voltage	VCEO	30		40				Vdc
Collector± Base Voltage	VCBO	60		75				Vdc
Emitter± Base Voltage	VEBO	5.0		6.0				Vdc
Collector Current Ð Continuous	IC		600					mAdc
THERMAL CHARACTERISTICS
Characteristic	Symbol		Max					Unit
Total Device Dissipation FR± 5 Board(1)	PD		225					mW
TA = 25°C
Derate above 25°C			1.8				mW/°C
Thermal Resistance, Junction to Ambient	RqJA		556					°C/W
Total Device Dissipation	PD		300					mW
Alumina Substrate,(2) T = 25°C
A
Derate above 25°C			2.4				mW/°C
Thermal Resistance, Junction to Ambient	RqJA		417					°C/W
Junction and Storage Temperature	TJ, Tstg	± 55 to +150						°C

DEVICE MARKING

MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

MMBT2222LT1 MMBT2222ALT1*

*Motorola Preferred Device

3

1

2

CASE 318 ± 08, STYLE 6

SOT± 23 (TO ± 236AB)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

	Collector± Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)	MMBT2222	V(BR)CEO	30	Ð	Vdc
		MMBT2222A		40	Ð
	Collector± Base Breakdown Voltage (IC = 10 mAdc, IE = 0)	MMBT2222	V(BR)CBO	60	Ð	Vdc
		MMBT2222A		75	Ð
	Emitter± Base Breakdown Voltage (IE = 10 mAdc, IC = 0)	MMBT2222	V(BR)EBO	5.0	Ð	Vdc
		MMBT2222A		6.0	Ð
	Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)	MMBT2222A	ICEX	Ð	10	nAdc
	Collector Cutoff Current (VCB = 50 Vdc, IE = 0)	MMBT2222	ICBO	Ð	0.01	μAdc
	(VCB = 60 Vdc, IE = 0)	MMBT2222A		Ð	0.01
	(VCB = 50 Vdc, IE = 0, TA = 125°C)	MMBT2222		Ð	10
	(VCB = 60 Vdc, IE = 0, TA = 125°C)	MMBT2222A		Ð	10
	Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)	MMBT2222A	IEBO	Ð	100	nAdc
	Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)	MMBT2222A	IBL	Ð	20	nAdc
1.	FR± 5 = 1.0 0.75 0.062 in.
2.	Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

MMBT2222LT1	MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
	Characteristic				Symbol	Min	Max	Unit
ON CHARACTERISTICS
DC Current Gain					hFE			Ð
(IC = 0.1 mAdc, VCE = 10 Vdc)						35	Ð
(IC = 1.0 mAdc, VCE = 10 Vdc)						50	Ð
(IC = 10 mAdc, VCE = 10 Vdc)						75	Ð
(IC = 10 mAdc, VCE = 10 Vdc, TA = ±55°C)			MMBT2222A only			35	Ð
(IC = 150 mAdc, VCE = 10 Vdc) (3)						100	300
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)						50	Ð
(IC = 500 mAdc, VCE = 10 Vdc) (3)			MMBT2222			30	Ð
			MMBT2222A			40	Ð
Collector± Emitter Saturation Voltage (3)					VCE(sat)			Vdc
(IC = 150 mAdc, IB = 15 mAdc)			MMBT2222			Ð	0.4
			MMBT2222A			Ð	0.3
(IC = 500 mAdc, IB = 50 mAdc)			MMBT2222			Ð	1.6
			MMBT2222A			Ð	1.0
Base ± Emitter Saturation Voltage (3)					VBE(sat)			Vdc
(IC = 150 mAdc, IB = 15 mAdc)			MMBT2222			Ð	1.3
			MMBT2222A			0.6	1.2
(IC = 500 mAdc, IB = 50 mAdc)			MMBT2222			Ð	2.6
			MMBT2222A			Ð	2.0
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product (4)					fT			MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)			MMBT2222			250	Ð
			MMBT2222A			300	Ð
Output Capacitance					Cobo			pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)						Ð	8.0
Input Capacitance					Cibo			pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)			MMBT2222			Ð	30
			MMBT2222A			Ð	25
Input Impedance					hie			kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			2.0	8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			0.25	1.25
Voltage Feedback Ratio					h			X 10± 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A		re	Ð	8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			Ð	4.0
Small± Signal Current Gain					hfe			Ð
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			50	300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			75	375
Output Admittance					hoe			mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			5.0	35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)			MMBT2222A			25	200
Collector Base Time Constant					rb, Cc			ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)			MMBT2222A			Ð	150
Noise Figure					NF			dB
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)			MMBT2222A			Ð	4.0
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time		(V = 30 Vdc, V	BE(off)	= ± 0.5 Vdc,	td	Ð	10
		CC						ns
Rise Time		IC = 150 mAdc, IB1 = 15 mAdc)			tr	Ð	25
Storage Time		(VCC = 30 Vdc, IC = 150 mAdc,			ts	Ð	225	ns
Fall Time		IB1 = IB2 = 15 mAdc)			tf	Ð	60

3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4.fT is defined as the frequency at which |hfe| extrapolates to unity.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

MMBT2222LT1 MMBT2222ALT1

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+16 V	1.0 to 100 μs,
	DUTY CYCLE ≈ 2.0%
0	1 kΩ
± 2 V
	< 2 ns

+ 30 V
200		+16 V	1.0 to 100 μs,
			DUTY CYCLE ≈ 2.0%
		0	1 k
	CS* < 10 pF	±14 V
			< 20 ns
			1N914
	Scope rise time < 4 ns		± 4 V
	*Total shunt capacitance of test jig, connectors, and oscilloscope.

+ 30 V

200

CS* < 10 pF

Figure 1. Turn±On Time

Figure 2. Turn±Off Time

	1000
	700
	500
GAIN	300
	200
CURRENT
	100
	70
, DC
	50
FE
h	30
	20
	10
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200	300	500	700	1.0 k

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

(VOLTS)	1.0
VOLTAGE	0.8
	0.6
, COLLECTOR±EMITTER
	0.4
	0.2
CE	0
V
	0.005	0.01	0.02	0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3