Motorola MJD210T4, MJD210, MJD200, MJD210RL Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJD200/D

Complementary

Plastic Power Transistors

NPN/PNP Silicon DPAK For Surface Mount

Applications

. . . designed for low voltage, low±power, high±gain audio amplifier applications.

• Collector±Emitter Sustaining Voltage Ð VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

•High DC Current Gain Ð h FE = 70 (Min) @ IC = 500 mAdc

=45 (Min) @ IC = 2 Adc

=10 (Min) @ IC = 5 Adc

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (ª±1º Suffix)

•Lead Formed Version in 16 mm Tape and Reel (ªT4º Suffix)

•Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current±Gain Ð Bandwidth Product Ð f T = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage Ð I CBO = 100 nAdc @ Rated VCB
MAXIMUM RATINGS
Rating	Symbol		Value		Unit
Collector±Base Voltage	VCB		40		Vdc
Collector±Emitter Voltage	VCEO		25		Vdc
Emitter±Base Voltage	VEB		8		Vdc
Collector Current Ð Continuous	IC		5		Adc
Peak			10
Base Current	IB		1		Adc
Total Device Dissipation @ TC = 25_C	PD		12.5		Watts
Derate above 25_C			0.1		W/_C
Total Device Dissipation @ TA = 25_C*	PD		1.4		Watts
Derate above 25_C			0.011		W/_C
Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic	Symbol		Max		Unit
Thermal Resistance, Junction to Case	RθJC		10		_C/W
Thermal Resistance, Junction to Ambient*	RθJA		89.3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic	Symbol	Min		Max	Unit
OFF CHARACTERISTICS
Collector±Emitter Sustaining Voltage (1)	VCEO(sus)	25		Ð	Vdc
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current	ICBO				nAdc
(VCB = 40 Vdc, IE = 0)		Ð		100
(VCB = 40 Vdc, IE = 0, TJ = 125_C)		Ð		100
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)	IEBO	Ð		100	nAdc
* When surface mounted on minimum pad sizes recommended.					(continued)
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle [ 2%.

REV 1

NPN

MJD200

PNP

MJD210

SILICON

POWER TRANSISTORS

5 AMPERES

25 VOLTS

12.5 WATTS

CASE 369A±13

CASE 369±07

MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS

0.190	4.826
			0.165	4.191
		0.07	1.8
			0.118	3.0
0.243	0.063	1.6
	6.172		inches
				mm

Motorola, Inc. 1995

MJD200 MJD210

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Max	Unit
ON CHARACTERISTICS
DC Current Gain (1)			hFE			Ð
(IC = 500 mAdc, VCE = 1 Vdc)				70	Ð
(IC = 2	Adc, VCE = 1 Vdc)			45	180
(IC = 5	Adc, VCE = 2 Vdc)			10	Ð
Collector±Emitter Saturation Voltage (1)			VCE(sat)			Vdc
(IC = 500 mAdc, IB = 50 mAdc)				Ð	0.3
(IC = 2	Adc, IB = 200 mAdc)			Ð	0.75
(IC = 5	Adc, IB = 1 Adc)			Ð	1.8
Base±Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc)			VBE(sat)	Ð	2.5	Vdc
Base±Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc)			VBE(on)	Ð	1.6	Vdc
DYNAMIC CHARACTERISTICS
Current±Gain Ð Bandwidth Product (2)			fT	65	Ð	MHz
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance		MJD200	Cob	Ð	80	pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)		MJD210		Ð	120

(1)Pulse Test: Pulse Width = 300 μs, Duty Cycle [ 2%.

(2)fT = hfe•ftest.

PD, POWER DISSIPATION (WATTS)

TA	TC
2.5	25																									VCC
2	20																	25 μs							+ 30 V
													+11 V																				RC
1.5	15												0			± 9 V					RB													SCOPE
1	10				TA (SURFACE		MOUNT)							tr, tf ≤ 10 ns							51				D1
														DUTY CYCLE = 1%
					TC
0.5	5																					± 4 V
														RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0	0												D1 MUST BE FAST RECOVERY TYPE, e.g.:
														1N5825 USED ABOVE IB ≈ 100 mA										FOR PNP TEST CIRCUIT,
			50		75	100			125		150
	25													MSD6100 USED BELOW IB ≈ 100 mA									REVERSE ALL POLARITIES
					T, TEMPERATURE (°C)

Figure 1. Power Derating

Figure 2. Switching Time Test Circuit

t, TIME (ns)

1K
500				td
300
200
100
50
30			tr				VCC = 30 V
20
10							IC/IB = 10
								°
							TJ = 25 C
5
3	MJD200
2
	MJD210
1
0.01	0.02 0.03 0.05	0.1	0.2	0.3	0.5	1	2	3	5	10
	IC, COLLECTOR CURRENT (AMPS)

Figure 3. Turn±On Time

	10K
	5K							VCC = 30 V
	3K					ts		IC/IB = 10
	2K							IB1 = IB2
	1K							TJ = 25°C
(ns)
	500
TIME
	300
	200
t,
	100
	50
	30	MJD200		tf
	20
	10	MJD210
	0.01	0.02 0.03 0.05	0.1	0.2	0.3	0.5	1	2	3	5	10

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Turn±Off Time

2	Motorola Bipolar Power Transistor Device Data