Motorola MCR506-2, MCR506-3, MCR506-8, MCR506-6, MCR506-4 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCR506/D

Silicon Controlled Rectifiers

. . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.

•Passivated Surface for Reliability and Uniformity

•Power Rated at Economical Prices

•Practical Level Triggering and Holding Characteristics

•Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability.

MCR506

Series

SCRs

6 AMPERES RMS

50 thru 600 VOLTS

G A K

			G	77-08
			A	(TO-225AA)
			K
				STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating	Symbol		Value		Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)	VDRM				Volts
(TJ = 25 to 110°C, RGK = 1 kΩ)	VRRM
MCR506-2			50
MCR506-3			100
MCR506-4			200
MCR506-6			400
MCR506-8			600
RMS Forward Current (All Conduction Angles)	IT(RMS)		6		Amp
Average Forward Current (TC = 93°C)	IT(AV)		3.82		Amp
Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = ±40 to 110°C)	ITSM		40		Amp
Circuit Fusing Considerations (t = 8.3 ms)	I2t		2.6		A2s
Peak Gate Power	PGM		0.5		Watt
Average Gate Power	PG(AV)		0.1		Watt
Peak Forward Gate Current	IGM		0.2		Amp
Peak Reverse Gate Voltage	VRGM		6		Volts
Operating Junction Temperature Range	TJ		±40 to 110		°C
Storage Temperature Range	Tstg		±40 to 150		°C
Mounting Torque(2)	Ð		6		in. lb.

1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting torque in excess of 6 in. lb. does not

appreciably lower case-to-sink thermal resistance. Anode lead and heat sink contact pad are common. (See AN290 B)

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +225°C. For optimum results, an activated flux (oxide removing) is recommended.

Motorola, Inc. 1995

MCR506 Series

THERMAL CHARACTERISTICS

Characteristic		Symbol				Max			Unit
Thermal Resistance, Junction to Case		RθJC			3				°C/W
Thermal Resistance, Junction to Ambient		RθJA			75				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ohms unless otherwise noted.)
Characteristic	Symbol			Min		Typ	Max			Unit
Peak Forward Blocking Current	IDRM			Ð		Ð	200			μA
(VD = Rated VDRM, TJ = 110°C)
Peak Reverse Blocking Current	IRRM			Ð		Ð	200			μA
(VR = Rated VRRM, TJ = 110°C)
Forward ªOnº Voltage	VTM			Ð		Ð	1.9			Volts
(ITM = 12 A Peak)
Gate Trigger Current (Continuous dc)	IGT			Ð		Ð	200			μA
(VAK = 7 Vdc, RL = 100 Ohms)
(VAK = 7 Vdc, RL = 100 Ohms, TC = ±40°C)				Ð		Ð	500
Gate Trigger Voltage (Continuous dc)	VGT			Ð		Ð	1			Volts
(VAK = 7 Vdc, RL = 100 Ohms, TC = 25°C)
Gate Non-Trigger Voltage	VGD			0.2		Ð	Ð			Volts
(VAK = Rated VDRM, RL = 100 Ohms, TJ = 110°C)
Holding Current	IH			Ð		Ð	5			mA
(VAK = 7 Vdc, TC = 25°C)
Forward Voltage Application Rate	dv/dt			Ð		10	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TJ = 110°C)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

			FIGURE 1 Ð CURRENT DERATING														(WATTS)				FIGURE 2 Ð POWER DISSIPATION
105
110																	DISSIPATION	10.0
100																		8.0
95																	POWER	6.0
90
																		4.0
85																	AVERAGE,
80																		2.0
75																	(AV)
70																		0
																	P
0		1.0		2.0			3.0		4.0		5.0			6.0		7.0		0		1.0		2.0			3.0		4.0		5.0			6.0		7.0
				IT(RMS), RMS ON-STATE CURRENT (AMPS)																		IT(RMS), RMS ON-STATE CURRENT (AMPS)

2	Motorola Thyristor Device Data