Motorola MJ11033, MJ11032, MJ11031, MJ11030, MJ11029 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ11028/D

High-Current Complementary

Silicon Transistors

. . . for use as output devices in complementary general purpose amplifier applications.

• High DC Current Gain Ð h FE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

•Curves to 100 A (Pulsed)

•Diode Protection to Rated IC

•Monolithic Construction with Built±In Base±Emitter Shunt Resistor

•Junction Temperature to +200_C

MAXIMUM RATINGS

		MJ11028		MJ11030		MJ11032
Rating	Symbol	MJ11029		MJ11031		MJ11033	Unit
Collector±Emitter Voltage	VCEO	60		90		120	Vdc
Collector±Base Voltage	VCB	60		90		120	Vdc
Emitter±Base Voltage	VEB		5				Vdc
Collector Current Ð Continuous	IC		50				Adc
Peak	ICM		100
Base Current Ð Continuous	IB		2				Adc
Total Power Dissipation @ TC = 25_C	PD		300				Watts
Derate above 25_C @ TC = 100_C			1.71				W/_C
Operating and Storage Junction	TJ, Tstg		± 55 to +200				_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Maximum Lead Temperature for	TL	275	_C
Soldering Purposes for v 10 seconds
Thermal Resistance Junction to Case	RθJC	0.584	_C

NPN

MJ11028

MJ11030 MJ11032*

PNP

MJ11029

MJ11031 MJ11033*

*Motorola Preferred Device

50 AMPERE

COMPLEMENTARY

SILICON

DARLINGTON

POWER TRANSISTORS

60 ± 120 VOLTS

300 WATTS

CASE 197A±05

TO±204AE (TO±3)

PNP	COLLECTOR
MJ11029
MJ11031
MJ11033
BASE
≈ 3.0 k	≈ 25

NPN	COLLECTOR
MJ11028
MJ11030
MJ11032
BASE
≈ 3.0 k	≈ 25

EMITTER

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MJ11028		MJ11030	MJ11032	MJ11029	MJ11031	MJ11033
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
			Characteristic				Symbol	Min	Max	Unit
	OFF CHARACTERISTICS
	Collector±Emitter Breakdown Voltage (1)				MJ11028, MJ11029		V(BR)CEO	60	Ð	Vdc
	(IC = 1 00 mAdc, IB = 0)				MJ11030, MJ11031			90	Ð
					MJ11032, MJ11033			120	Ð
	Collector±Emitter Leakage Current						ICER			mAdc
	(VCE = 60 Vdc, RBE = 1 k ohm)				MJ11028, MJ11029			Ð	2
	(VCE = 90 Vdc, RBE = 1 k ohm)				MJ11030, MJ11031			Ð	2
	(VCE = 120 Vdc, RBE = 1 k ohm)				MJ11032, MJ11033			Ð	2
	(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C)				MJ11028, MJ11029			Ð	10
	(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C)				MJ11030, MJ11031			Ð	10
	(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C)				MJ11032, MJ11033			Ð	10
	Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)						IEBO	Ð	5	mAdc
	Collector±Emitter Leakage Current (VCE = 50 Vdc, IB = 0)						ICEO	Ð	2	mAdc
	ON CHARACTERISTICS (1)
	DC Current Gain						hFE			Ð
	(IC = 25 Adc, VCE = 5 Vdc)							1 k	18 k
	(IC = 50 Adc, VCE = 5 Vdc)							400	Ð
	Collector±Emitter Saturation Voltage						VCE(sat)			Vdc
	(IC = 25 Adc, IB = 250 mAdc)							Ð	2.5
	(IC = 50 Adc, IB = 500 mAdc)							Ð	3.5
	Base±Emitter Saturation Voltage						VBE(sat)			Vdc
	(IC = 25 Adc, IB = 200 mAdc)							Ð	3.0
	(IC = 50 Adc, IB = 300 mAdc)							Ð	4.5

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. 100

50

(AMP)	20
CURRENT	10
	5		BONDING WIRE LIMITED
COLLECTOR	0.5		THERMALLY LIMITED @ TC = 25°C
	2		SECOND BREAKDOWN LIMITED
	1					MJ11028, 29
,						MJ11030, 31
C						MJ11032, 33
I	0.2
	0.1
	0.2	0.5	1	2	5	10	20	50	100	200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

There are two limitations on the power±handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

	100 k
	50 k	VCE = 5 V
	20 k	TJ = 25°C
GAIN
	10 k
CURRENT	5 k
	2 k
, DC	1 k	MJ11029, MJ11031, MJ11033 PNP
		MJ11028, MJ11030, MJ11032 NPN
FE	500
h
	200					80 μs
						(PULSED)
	100	2	5	10	20	50	100
	1

IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

(VOLTS)	5
		MJ11029, MJ11031, MJ11033 PNP
		MJ11028, MJ11030, MJ11032 NPN
VOLTAGE	4
	3	TJ = 25°C
COLLECTOR±EMITTER					V
		IC/IB = 100			BE(sat)
	2
	1						80 μs
,							(PULSED)
CE	0	VCE(sat)
V		2	3	5	10	20	50	100
	1

IC, COLLECTOR CURRENT (AMP)

Figure 4. ªOnº Voltage

2	Motorola Bipolar Power Transistor Device Data