MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE15028/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use as high±frequency drivers in audio amplifiers.
•DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc
•Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 120 Vdc (Min) Ð MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) Ð MJE15030, MJE15031
•High Current Gain Ð Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc
•TO±220AB Compact Package
MAXIMUM RATINGS
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MJE15028 |
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MJE15030 |
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Rating |
Symbol |
MJE15029 |
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MJE15031 |
Unit |
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Collector±Emitter Voltage |
VCEO |
120 |
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150 |
Vdc |
Collector±Base Voltage |
VCB |
120 |
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150 |
Vdc |
Emitter±Base Voltage |
VEB |
5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
8.0 |
Adc |
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Ð Peak |
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16 |
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Base Current |
IB |
2.0 |
Adc |
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Total Power Dissipation @ TC = 25_C |
PD |
50 |
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Watts |
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Derate above 25_C |
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0.40 |
W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
Watts |
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Derate above 25_C |
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0.016 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
2.5 |
_C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
NPN
MJE15028* MJE15030*
PNP
MJE15029* MJE15031*
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
120 ± 150 VOLTS
50 WATTS
CASE 221A±06
TO±220AB
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TA |
TC |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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TC |
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POWER |
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1.0 |
20 |
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TA |
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, |
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D |
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P |
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0 |
0 |
20 |
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80 |
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140 |
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0 |
40 |
60 |
100 |
120 |
160 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MJE15028 |
MJE15030 |
MJE15029 |
MJE15031 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 10 mAdc, IB = 0) |
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MJE15028, MJE15029 |
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120 |
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Ð |
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MJE15030, MJE15031 |
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150 |
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Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 120 Vdc, IB = 0) |
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MJE15028, MJE15029 |
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Ð |
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0.1 |
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(VCE = 150 Vdc, IB = 0) |
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MJE15030, MJE15031 |
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Ð |
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0.1 |
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Collector Cutoff Current |
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ICBO |
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μAdc |
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(VCB = 120 Vdc, IE = 0) |
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MJE15028, MJE15029 |
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Ð |
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10 |
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(VCB = 150 Vdc, IE = 0) |
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MJE15030, MJE15031 |
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Ð |
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10 |
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Emitter Cutoff Current |
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IEBO |
Ð |
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10 |
μAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.1 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 2.0 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 3.0 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 4.0 Adc, VCE = 2.0 Vdc) |
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20 |
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Ð |
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DC Current Gain Linearity |
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hFE |
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Typ |
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(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) |
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2 |
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(NPN TO PNP) |
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3 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
Ð |
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0.5 |
Vdc |
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(IC = 1.0 Adc, IB = 0.1 Adc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
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1.0 |
Vdc |
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(IC = 1.0 Adc, VCE = 2.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current Gain Ð Bandwidth Product (2) |
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fT |
30 |
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Ð |
MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) |
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(1) |
Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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(2) |
fT = hfe•ftest. |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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r(t), TRANSIENT THERMAL |
0.3 |
0.2 |
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0.2 |
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0.1 |
0.1 |
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P(pk) |
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0.05 |
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ZθJC(t) = r(t) RθJC |
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0.07 |
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° |
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0.05 |
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RθJC = 1.56 C/W MAX |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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READ TIME AT t1 |
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t2 |
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0.02 |
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0.01 |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
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DUTY CYCLE, D = t1/t2 |
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SINGLE PULSE |
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0.01 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
t, TIME (ms)
Figure 2. Thermal Response
2 |
Motorola Bipolar Power Transistor Device Data |
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