MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Hybrid Power Module |
MHPM6B20E60D3 |
Integrated Power Stage |
Motorola Preferred Device |
for 230 VAC Motor Drives |
|
This module integrates a 3±phase inverter and 3±phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive applications at frequencies up to 15 kHz. The inverter incorporates advanced EM±Series insulated gate bipolar transistors (IGBT) matched with ultrafast soft (UFS) free±wheeling diodes to give optimum performance. The input bridge uses rugged, efficient diodes with high surge capability. The top connector pins are designed for easy interfacing to the user's control board. It is pin±compatible with MHPM6B15E60D3 series modules for scalability.
•Short Circuit Rated 10 μs @ 125°C, 400 V
•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
•Compact Package Outline
•Access to Positive and Negative DC Bus
•Gate±Emitter Clamp Diodes for ESD Protection
•UL Recognition Pending
ORDERING INFORMATION
|
Voltage |
Current |
Equivalent |
Device |
Rating |
Rating |
Horsepower |
|
|
|
|
PHPM6B20E60D3 |
600 |
20 |
2.0 |
|
|
|
|
20 AMP, 600 VOLT
HYBRID POWER MODULES
CASE 464±03 |
ISSUE B |
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) |
VRRM |
900 |
V |
IGBT Reverse Voltage |
VCES |
600 |
V |
Gate-Emitter Voltage |
VGES |
± 20 |
V |
Continuous IGBT Collector Current (TC = 25°C) |
ICmax |
20 |
A |
Continuous IGBT Collector Current (TC = 80°C) |
IC80 |
15 |
A |
Repetitive Peak IGBT Collector Current (1) |
I |
40 |
A |
|
C(pk) |
|
|
Continuous Free±Wheeling Diode Current (TC = 25°C) |
IFmax |
20 |
A |
Continuous Free±Wheeling Diode Current (TC = 80°C) |
IF80 |
14 |
A |
Repetitive Peak Free±Wheeling Diode Current (1) |
I |
40 |
A |
|
F(pk) |
|
|
Average Converter Output Current (Peak±to±Average ratio of 10, TC = 95°C) |
IOmax |
20 |
A |
Continuous Input Rectifier Current (TC = 25°C) |
IDC |
20 |
A |
Non±Repetitive Peak Input Rectifier Forward Surge Current (2) |
I |
475 |
A |
(TJ = 95°C prior to start of surge) |
FSM |
|
|
|
|
|
|
IGBT Power Dissipation per die (TC = 95°C) |
PD |
25 |
W |
Free±Wheeling Diode Power Dissipation per die (TC = 95°C) |
PD |
17 |
W |
Input Rectifier Power Dissipation per die (TC = 95°C) |
PD |
13 |
W |
(1) 1.0 ms = 1.0% duty cycle
(2) 1.0 ms = 10% pulse width (tw 10%)
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
|
IGBT Device Data |
1 |
Motorola, Inc. 1998 |
|
|
MHPM6B20E60D3
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating |
|
Symbol |
|
|
Value |
|
|
Unit |
||
|
|
|
|
|
|
|
|
|
|
|
Junction Temperature Range |
|
TJ |
|
|
± 40 to +150 |
°C |
||||
Short Circuit Duration (VCE = 400 V, TJ = 125°C) |
|
tsc |
|
10 |
|
|
|
ms |
||
Isolation Voltage, pin to baseplate |
|
VISO |
|
2500 |
|
|
Vac |
|||
Operating Case Temperature Range |
|
TC |
|
|
± 40 to +95 |
°C |
||||
Storage Temperature Range |
|
Tstg |
|
|
± 40 to +150 |
°C |
||||
Mounting Torque Ð Heat Sink Mounting Holes |
|
Ð |
|
|
12 |
|
|
|
lb±in |
|
|
|
|
|
|
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) |
|
|
|
|
|
|
|
|
|
|
Characteristic |
|
Symbol |
|
Min |
|
Typ |
|
Max |
|
Unit |
|
|
|
|
|
|
|
|
|
|
|
DC AND SMALL SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Input Rectifier Forward Voltage (I = 20 A) |
|
VF |
|
Ð |
|
1.0 |
|
1.25 |
|
V |
TJ = 125°C |
|
|
|
Ð |
|
0.92 |
|
Ð |
|
|
Maximum Instantaneous Reverse Current (V = 900 V) |
|
IR |
|
Ð |
|
50 |
|
Ð |
|
mA |
TJ = 150°C |
|
|
|
Ð |
|
3000 |
|
Ð |
|
|
Gate±Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) |
|
IGES |
|
Ð |
|
Ð |
|
±50 |
|
mA |
Collector±Emitter Leakage Current (VCE = 600 V, VGE = 0 V) |
|
ICES |
|
Ð |
|
5.0 |
|
100 |
|
mA |
Gate±Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) |
|
VGE(th) |
|
4.0 |
|
6.0 |
|
8.0 |
|
V |
Collector±Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) |
V(BR)CES |
|
600 |
|
Ð |
|
Ð |
|
V |
|
Collector±Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) |
VCE(SAT) |
|
Ð |
|
2.2 |
|
2.6 |
|
V |
|
TJ = 125°C |
|
|
|
Ð |
|
2.5 |
|
Ð |
|
|
Free±Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V) |
|
VF |
|
Ð |
|
2.0 |
|
2.3 |
|
V |
TJ = 125°C |
|
|
|
Ð |
|
1.8 |
|
Ð |
|
|
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) |
|
Cies |
|
Ð |
|
TBD |
|
Ð |
|
pF |
THERMAL CHARACTERISTICS (EACH DIE) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Thermal Resistance Ð IGBT |
|
RqJC |
|
Ð |
|
1.8 |
|
2.2 |
|
°C/W |
Thermal Resistance Ð Free±Wheeling Diode |
|
RqJC |
|
Ð |
|
2.6 |
|
3.3 |
|
°C/W |
Thermal Resistance Ð Input Rectifier |
|
RqJC |
|
Ð |
|
3.4 |
|
4.2 |
|
°C/W |
2 |
Motorola IGBT Device Data |
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