Motorola MCR310-8, MCR310-2, MCR310-3, MCR310-4, MCR310-6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCR310/D

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

. . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.

•Center Gate Geometry for Uniform Current Density

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Low Trigger Currents, 200 μA Maximum for Direct Driving from Integrated Circuits

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating	Symbol	Value	Unit
Peak Repetitive Forward and Reverse Blocking	VDRM		Volts
Voltage(1)	or
(TJ = ±40 to 110°C)	VRRM
(1/2 Sine Wave, RGK = 1 kΩ)		50
MCR310-2
MCR310-3		100
MCR310-4		200
MCR310-6		400
MCR310-8		600
MCR310-10		800
On-State RMS Current (TC = 75°C)	IT(RMS)	10	Amps
Peak Non-repetitive Surge Current	ITSM	100	Amps
(1/2 Cycle, 60 Hz, TJ = ±40 to 110°C)
Circuit Fusing (t = 8.3 ms)	I2t	40	A2s
Peak Gate Voltage (t p 10 μs)	VGM	±5	Volts
Peak Gate Current (t p 10 μs)	IGM	1	Amp
Peak Gate Power (t p 10 μs)	PGM	5	Watts
Average Gate Power	PG(AV)	0.75	Watt
Operating Junction Temperature Range	TJ	±40 to +110	°C
Storage Temperature Range	Tstg	±40 to +150	°C
Mounting Torque	±	8	in.-lb.
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

MCR310

Series

SCRs

10 AMPERES RMS

50 thru 800 VOLTS

G A C

K

A	CASE 221A-04
G	(TO-220AB)
	STYLE 3

1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MCR310 Series

ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
Peak Forward Blocking Current(1)	T = 110°C	I	Ð	Ð	500	μA
	C	DRM
(TJ = 110°C, VD = Rated VDRM)	TC = 25°C		Ð	Ð	10	μA
Peak Reverse Blocking Current(1)	T = 110°C	I	Ð	Ð	500	μA
	C	RRM
(TJ = 110°C, VR = Rated VRRM)	TC = 25°C		Ð	Ð	10	μA
On-State Voltage		VTM	Ð	1.7	2.2	Volts
(ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Gate Trigger Current, Continuous dc(2)		I	Ð	30	200	μA
(VD = 12 V, RL = 100 Ω)		GT
Gate Trigger Voltage, Continuous dc		VGT				Volts
(VD = 12 V, RL = 100 Ω)			Ð	0.5	1.5
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)			0.1	Ð	Ð
Holding Current		IH	Ð	Ð	6	mA
(VD = 12 V, ITM = 100 mA)
Critical Rate of Rise of Forward Blocking Voltage		dv/dt	Ð	10	Ð	V/μs
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
Gate Controlled Turn-On Time		tgt	Ð	1	Ð	μs
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)

1.Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

2.Does not include RGK current.

°C)	120
(
TEMPERATURE	110				α
				α = CONDUCTION ANGLE
	100
CASE	90	α = 30°
			60° 90°
, MAXIMUM
				180°
	80
C					dc
T	70
	0	2	4	6	8	10
		IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 1. Average Current Derating

(WATTS)	20
						dc
DISSIPATION	16
		α
		α = CONDUCTION ANGLE		180°
	12
			90°
POWER
	8	α = 30° 60°
, AVERAGE	4
AV
P	0
	0	2	4	6	8	10
		IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 2. On-State Power Dissipation

NORMALIZED GATE CURRENT

3

2

VD = 12 Vdc

1

0.5

0.3

±40	±20	0	20	40	60	80	90	100	120	140
			TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Normalized Gate Current

VGT, GATE TRIGGER VOLTAGE (VOLTS)

0.7

VD = 12 Vdc

0.6

0.5

0.4

0.3

0.2

0.1

±60	±40	±20	0	20	40	60	80	100	120
			TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Gate Voltage

2	Motorola Thyristor Device Data