MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR16/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half±wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half±wave, silicon gate±controlled devices are needed.
•Blocking Voltage to 800 Volts
•On-State Current Rating of 16 Amperes RMS
•High Surge Current Capability Ð 160 Amperes
•Industry Standard TO±220AB Package for Ease of Design
•Glass Passivated Junctions for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MCR16
SERIES*
*Motorola preferred devices
SCRs
16 AMPERES RMS
400 thru 800 VOLTS
A
K
A
G
CASE 221A±06 (TO-220AB)
Style 3
Parameter |
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Symbol |
Value |
Unit |
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Peak Repetitive Off-State Voltage (1) |
|
VDRM |
|
Volts |
Peak Repetitive Reverse Voltage |
|
VRRM |
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|
(TJ = ±40 to 125°C) |
MCR16D |
|
400 |
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MCR16M |
|
600 |
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MCR16N |
|
800 |
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On-State RMS Current |
|
IT(RMS) |
16 |
A |
(All Conduction Angles) |
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Peak Non-repetitive Surge Current |
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ITSM |
160 |
A |
(One Half Cycle, 60 Hz, TJ = 125°C) |
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Circuit Fusing Consideration (t = 8.3 ms) |
|
I2t |
106 |
A2sec |
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) |
|
PGM |
5.0 |
Watts |
Average Gate Power (t = 8.3 ms, TC = 80°C) |
|
PG(AV) |
0.5 |
Watts |
Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) |
|
IGM |
2.0 |
A |
Operating Junction Temperature Range |
|
TJ |
± 40 to +125 |
°C |
Storage Temperature Range |
|
Tstg |
± 40 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction to Case |
|
RqJC |
1.5 |
°C/W |
Thermal Resistance Ð Junction to Ambient |
|
RqJA |
62.5 |
|
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds |
TL |
260 |
°C |
|
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
MCR16 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
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OFF CHARACTERISTICS
Peak Forward Blocking Current |
TJ = 25°C |
IDRM |
Ð |
Ð |
0.01 |
mA |
Peak Reverse Blocking Current |
TJ = 125°C |
IRRM |
Ð |
Ð |
2.0 |
|
(VAK = Rated VDRM or VRRM, Gate Open) |
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ON CHARACTERISTICS |
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Peak On-State Voltage* (ITM = 32 A) |
|
VTM |
Ð |
Ð |
1.7 |
Volts |
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) |
|
IGT |
2.0 |
8.0 |
20 |
mA |
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) |
|
VGT |
0.5 |
0.65 |
1.0 |
Volts |
Hold Current (Anode Voltage =12 V) |
|
IH |
4.0 |
25 |
40 |
mA |
DYNAMIC CHARACTERISTICS |
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Critical Rate of Rise of Off±State Voltage |
|
dv/dt |
50 |
200 |
Ð |
V/μs |
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C) |
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*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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TEMPERATURE ( °C) |
125 |
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DISSIPATION (WATTS) |
120 |
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115 |
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a |
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a = Conduction |
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Angle |
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MAXIMUM ALLOWABLECASE |
110 |
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(AV) |
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105 |
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AVERAGE POWER P |
|
100 |
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95 |
|
a=30° |
60° |
90 |
120° |
180° |
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dc |
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, |
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MAXIMUM |
C |
90 |
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T |
2 |
4 |
6 |
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8 |
10 |
12 |
14 |
16 |
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0 |
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IT(AV), AVERAGE ON±STATE CURRENT (AMP) |
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22 |
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20 |
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dc |
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18 |
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180° |
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16 |
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a |
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120° |
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14 |
a = Conduction |
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° |
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Angle |
|
90 |
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12 |
60° |
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10 |
|
a=30° |
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8 |
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6 |
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4 |
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2 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
0 |
||||||||
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IT(AV), AVERAGE ON±STATE CURRENT (AMP) |
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Figure 1. Average Current Derating |
Figure 2. Maximum On±State Power Dissipation |
CURRENT(AMPS) |
100 |
|
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1 |
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10 |
|
°C |
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(NORMALIZED) |
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Typical @ TJ=25 |
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Maximum @ TJ=125 °C |
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STATE-ON |
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THERMALR |
|
ZqJC(t) + RqJC(t) @ r(t) |
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INSTANTANEOUS |
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0.1 |
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Maximum @ TJ=25 |
°C |
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R |
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1 |
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TRANSIENT |
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(t) |
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, |
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T |
0.1 |
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0.01 |
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I |
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1@104 |
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|
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
3.5 |
0.1 |
1 |
10 |
100 |
1000 |
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VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS) |
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t, TIME (ms) |
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Figure 3. On±State Characteristics |
Figure 4. Transient Thermal Response |
2 |
Motorola Thyristor Device Data |
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