MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352LT1/D
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra±fast switching circuits.
•Very Low Capacitance Ð Less Than 1.0 pF @ Zero Volts
•Low Forward Voltage Ð 0.5 Volts (Typ) @ I F = 10 mA
MAXIMUM RATINGS (EACH DIODE)
Rating |
Symbol |
Value |
Unit |
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Continuous Reverse Voltage |
VR |
7.0 |
VCC |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Total Device Dissipation FR± 5 Board(1) |
PD |
225 |
mW |
TA = 25°C |
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Derate above 25°C |
|
1.8 |
mW/°C |
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Thermal Resistance, Junction to Ambient |
RqJA |
556 |
°C/W |
Total Device Dissipation |
PD |
300 |
mW |
Alumina Substrate(2) T = 25°C |
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A |
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Derate above 25°C |
|
2.4 |
mW/°C |
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Thermal Resistance, Junction to Ambient |
RqJA |
417 |
°C/W |
Junction and Storage Temperature |
TJ, Tstg |
± 55 to +150 |
°C |
DEVICE MARKING |
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MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic |
Symb |
Min |
Max |
Unit |
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ol |
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OFF CHARACTERISTICS
Forward Voltage |
VF |
Ð |
0.60 |
V |
(IF = 10 mAdc) |
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Reverse Voltage Leakage Current |
IR |
|
|
mA |
(VR = 3.0 V) |
|
Ð |
0.25 |
|
(VR = 7.0 V) |
|
Ð |
10 |
|
Capacitance |
C |
Ð |
1.0 |
pF |
(VR = 0 V, f = 1.0 MHz) |
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1.FR± 5 = 1.0 0.75 0.062 in.
2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3 |
|
1 |
|
2 |
|
1 |
2 |
ANODE |
CATHODE |
3 |
|
CATHODE/ANODE |
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MMBD352LT1
CASE 318 ± 08, STYLE 11 SOT± 23 (TO ± 236AB)
1 |
2 |
CATHODE |
ANODE |
3 |
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CATHODE/ANODE |
|
MMBD353LT1 |
|
CASE 318 |
± 08, STYLE 19 |
|
SOT± 23 |
(TO ± 236AB) |
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ANODE |
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3 |
1 |
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2 |
||
CATHODE |
||
ANODE |
||
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MMBD354LT1
CASE 318 ± 08, STYLE 9 SOT± 23 (TO ± 236AB)
CATHODE
ANODE |
1 |
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3 |
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2 |
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CATHODE |
MMBD355LT1
CASE 318 ± 08, STYLE 12 SOT± 23 (TO ± 236AB)
Thermal Clad is a trademark of the Bergquist Company
REV 2
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1997 |
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MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
|
100 |
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(mA) |
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TA = 85°C |
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FORWARDCURRENT |
10 |
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TA = ±40°C |
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1.0 |
|
T |
= 25°C |
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, |
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A |
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F |
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I |
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0.1 |
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0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
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VF, FORWARD VOLTAGE (VOLTS) |
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Figure 1. Forward Voltage
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1.0 |
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(pF) |
0.9 |
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C, CAPACITANCE |
0.8 |
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0.7 |
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0.6 |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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