Motorola MCR72-3, MCR72-4, MCR72-6, MCR72-10, MCR72-8 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCR72/D

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

. . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.

•Center Gate Geometry for Uniform Current Density

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Low Trigger Currents, 200 μA Maximum for Direct Driving from Integrated Circuits

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MCR72

Series

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

G A C

CASE 221A-04 (TO-220AB)

STYLE 3

Rating	Symbol	Value	Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)	VDRM		Volts
(TJ = ± 40 to 110°C,	or
1/2 Sine Wave, RGK = 1kΩ)	VRRM
MCR72-2		50
MCR72-3		100
MCR72-4		200
MCR72-6		400
MCR72-8		600
MCR72-10		800
On-State RMS Current (TC = 83°C)	IT(RMS)	8	Amps
Peak Non-repetitive Surge Current	ITSM	100	Amps
(1/2 Cycle, 60 Hz, TJ = ±40 to 110°C)
Circuit Fusing (t = 8.3 ms)	I2t	40	A2s
Peak Gate Voltage (t p 10 μs)	VGM	± 5	Volts
Peak Gate Current (t p 10 μs)	IGM	1	Amp
Peak Gate Power (t p 10 μs)	PGM	5	Watts
Average Gate Power	PG(AV)	0.75	Watts
Operating Junction Temperature Range	TJ	±40 to +110	°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;	(cont.)
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MCR72 Series

MAXIMUM RATINGS Ð continued

Rating	Symbol	Value	Unit
Storage Temperature Range	Tstg	±40 to + 150	°C
Mounting Torque	Ð	8	in. lb.
THERMAL CHARACTERISTICS
Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit
Peak Forward or Reverse Blocking Current(1)	IDRM, IRRM				μA
(VAK = Rated VDRM or VRRM) TJ = 25°C		Ð	Ð	10
TJ = 110°C		Ð	Ð	500	μA
On-State Voltage	VTM	Ð	1.7	2	Volts
(ITM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)(2)	I	Ð	30	200	μA
(VD = 12 V, RL = 100 Ω)	GT
Gate Trigger Voltage (Continuous dc)	VGT				Volts
(VD = 12 V, RL = 100 Ω)		Ð	0.5	1.5
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)		0.1	Ð	Ð
Holding Current	IH	Ð	Ð	6	mA
(VD = 12 V, ITM = 100 mA)
Critical Rate-of-Rise of Forward Blocking Voltage	dv/dt	Ð	10	Ð	V/μs
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
Gate Controlled Turn-On Time	tgt	Ð	1	Ð	μs
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)

1.Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

2.Does not include RGK current.

FIGURE 1 ± AVERAGE CURRENT DERATING

FIGURE 2 ± ON-STATE POWER DISSIPATION

TEMPERATURE (°C)	110				DISSIPATION (WATTS)	16
	100					12
				α
		α = 30°		α = Conduction Angle
	90					8.0
MAXIMUM CASE			60°		POWER
			90°
	80			180°		4.0
				dc
,					AVERAGE,
C
T	70				AV	0
		2.0	4.0	6.0	P
	0
					8.0
		IT(AV), AVERAGE ON-STATE CURRENT (AMP)

					dc
	α			180°
	α = Conduction Angle		90°
	α = 30°	60°
0	2.0		4.0	6.0	8.0
	IT(AV), AVERAGE ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data