MOTOROLA MMUN2213LT1, MMUN2213LT3, MMUN2212LT1, MMUN2234LT1, MMUN2235LT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMUN2211LT1/D

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

•Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace ªT1º with ªT3º in the Device Number to order the13 inch/10,000 unit reel.

R1

PIN 1 R2 BASE (INPUT)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PIN 3 COLLECTOR (OUTPUT)

PIN 2 EMITTER (GROUND)

MMUN2211LT1

SERIES

Motorola Preferred Devices

NPN SILICON

BIAS RESISTOR

TRANSISTOR

3

1

2

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

Rating	Symbol	Value	Unit
Collector-Base Voltage	VCBO	50	Vdc
Collector-Emitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc
Total Power Dissipation @ T = 25°C(1)		200	mW
A	PD		mW/°C
Derate above 25°C		1.6

THERMAL CHARACTERISTICS

	Thermal Resistance Ð Junction-to-Ambient (surface mounted)	RθJA	625	°C/W
	Operating and Storage Temperature Range	TJ, Tstg	± 65 to +150	°C
	Maximum Temperature for Soldering Purposes,	TL	260	°C
	Time in Solder Bath		10	Sec

DEVICE MARKING AND RESISTOR VALUES

Device	Marking	R1 (K)	R2 (K)
MMUN2211LT1	A8A	10	10
MMUN2212LT1	A8B	22	22
MMUN2213LT1	A8C	47	47
MMUN2214LT1	A8D	10	47
MMUN2215LT1(2)	A8E	10	∞
MMUN2216LT1(2)	A8F	4.7	∞
MMUN2230LT1(2)	A8G	1	1
MMUN2231LT1(2)	A8H	2.2	2.2
MMUN2232LT1(2)	A8J	4.7	4.7
MMUN2233LT1(2)	A8K	4.7	47
MMUN2234LT1(2)	A8L	22	47

1.Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2.New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

Motorola, IncSmall±Signal. 1996 Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	Ð	Ð	100	nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)		ICEO	Ð	Ð	500	nAdc
Emitter-Base Cutoff Current	MMUN2211LT1	IEBO	Ð	Ð	0.5	mAdc
(VEB = 6.0 V, IC = 0)	MMUN2212LT1		Ð	Ð	0.2
	MMUN2213LT1		Ð	Ð	0.1
	MMUN2214LT1		Ð	Ð	0.2
	MMUN2215LT1		Ð	Ð	0.9
	MMUN2216LT1		Ð	Ð	1.9
	MMUN2230LT1		Ð	Ð	4.3
	MMUN2231LT1		Ð	Ð	2.3
	MMUN2232LT1		Ð	Ð	1.5
	MMUN2233LT1		Ð	Ð	0.18
	MMUN2234LT1		Ð	Ð	0.13
Collector-Base Breakdown Voltage (IC = 10 μA, IE = 0)		V(BR)CBO	50	Ð	Ð	Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	Ð	Ð	Vdc
ON CHARACTERISTICS(3)
DC Current Gain	MMUN2211LT1	hFE	35	60	Ð
(VCE = 10 V, IC = 5.0 mA)	MMUN2212LT1		60	100	Ð
	MMUN2213LT1		80	140	Ð
	MMUN2214LT1		80	140	Ð
	MMUN2215LT1		160	350	Ð
	MMUN2216LT1		160	350	Ð
	MMUN2230LT1		3.0	5.0	Ð
	MMUN2231LT1		8.0	15	Ð
	MMUN2232LT1		15	30	Ð
	MMUN2233LT1		80	200	Ð
	MMUN2234LT1		80	150	Ð
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)		VCE(sat)	Ð	Ð	0.25	Vdc
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
Output Voltage (on)		VOL				Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω)	MMUN2211LT1		Ð	Ð	0.2
	MMUN2212LT1		Ð	Ð	0.2
	MMUN2214LT1		Ð	Ð	0.2
	MMUN2215LT1		Ð	Ð	0.2
	MMUN2216LT1		Ð	Ð	0.2
	MMUN2230LT1		Ð	Ð	0.2
	MMUN2231LT1		Ð	Ð	0.2
	MMUN2232LT1		Ð	Ð	0.2
	MMUN2233LT1		Ð	Ð	0.2
	MMUN2234LT1		Ð	Ð	0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω)	MMUN2213LT1		Ð	Ð	0.2
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)		VOH	4.9	Ð	Ð	Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω)	MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω)	MMUN2215LT1
	MMUN2216LT1
	MMUN2233LT1
3. Pulse Test: Pulse Width < 300 μs, Duty Cycle <	2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

	Characteristic	Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS(3)
Input Resistor	MMUN2211LT1	R1	7.0	10	13	k Ω
	MMUN2212LT1		15.4	22	28.6
	MMUN2213LT1		32.9	47	61.1
	MMUN2214LT1		7.0	10	13
	MMUN2215LT1		7.0	10	13
	MMUN2216LT1		3.3	4.7	6.1
	MMUN2230LT1		0.7	1.0	1.3
	MMUN2231LT1		1.5	2.2	2.9
	MMUN2232LT1		3.3	4.7	6.1
	MMUN2233LT1		3.3	4.7	6.1
	MMUN2234LT1		15.4	22	28.6
Resistor Ratio	MMUN2211LT1/MMUN2212LT1/MMUN2213LT1	R1/R2	0.8	1.0	1.2
	MMUN2214LT1		0.17	0.21	0.25
	MMUN2215LT1/MMUN2216LT1		Ð	Ð	Ð
	MMUN2230LT1/MMUN2231LT1/MMUN2232LT1		0.8	1.0	1.2
	MMUN2233LT1		0.055	0.1	0.185
	MMUN2234LT1		0.38	0.47	0.56

3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

MMUN2211LT1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2211LT1

	250
(MILLIWATTS)	200
DISSIPATION	150
	100
, POWER	50		RθJA = 625°C/W
D
P
	0	0	50	100	150
	±50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

(NORMALIZED)	1000
			VCE = 10 V
			TA = 75°C
			25°C
GAIN			±25°C
	100
, DC CURRENT
FE
h
	10 1	10	100
		IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

	100	25°C
		75°C
(mA)	10	TA = ±25°C
CURRENT	1
, COLLECTOR	0.1
	0.01
C		VO = 5 V
I

0.001
		0	1	2	3	4	5	6	7	8	9	10
					Vin, INPUT VOLTAGE (VOLTS)

Figure 5. VCE(sat) versus IC

(VOLTS)	1
		IC/IB = 10
VOLTAGE
					TA = ±25°C
					25°C
	0.1				75°C
COLLECTOR
, MAXIMUM	0.01
CE(sat)	0.001
V	0	20	40	60	80

IC, COLLECTOR CURRENT (mA)

				Figure 2. VCE(sat) versus IC
	4
						f = 1 MHz
	3					lE = 0 V
(pF)						TA = 25°C
, CAPACITANCE	2
ob	1
C
	0	0	10	20	30	40	50

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

	10
	V	O	= 0.2 V		TA = ±25°C
(VOLTS)						25°C
					75°C
, INPUT VOLTAGE	1
in
V
	0.1		10	20	30	40	50
	0
				IC, COLLECTOR CURRENT (mA)

Figure 6. VCE(sat) versus IC

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data