Motorola MMUN2113LT1, MMUN2130LT3, MMUN2130LT1, MMUN2132LT1, MMUN2112LT1 Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMUN2111LT1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space |
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PIN 3 |
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COLLECTOR |
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• Reduces Component Count |
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(OUTPUT) |
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• The SOT-23 package can be soldered using wave or |
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R1 |
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reflow. The modified gull-winged leads absorb thermal |
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stress during soldering eliminating the possibility of |
PIN 1 |
R2 |
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damage to the die. |
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BASE |
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• Available in 8 mm embossed tape and reel. Use the |
(INPUT) |
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Device Number to order the 7 inch/3000 unit reel. |
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PIN 2 |
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Replace ªT1º with ªT3º in the Device Number to order |
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EMITTER |
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the 13 inch/10,000 unit reel. |
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(GROUND) |
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MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
MMUN2111LT1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
Rating |
Symbol |
Value |
Unit |
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Collector-Base Voltage |
VCBO |
50 |
Vdc |
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Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
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Collector Current |
IC |
100 |
mAdc |
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Total Power Dissipation @ T = 25°C(1) |
P |
D |
200 |
mW |
A |
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Derate above 25°C |
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1.6 |
mW/°C |
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THERMAL CHARACTERISTICS
Rating |
Symbol |
Value |
Unit |
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Thermal Resistance Ð Junction-to-Ambient (surface mounted) |
RθJA |
625 |
°C/W |
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Operating and Storage Temperature Range |
TJ, Tstg |
± 65 to +150 |
°C |
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Maximum Temperature for Soldering Purposes, |
TL |
260 |
°C |
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Time in Solder Bath |
10 |
Sec |
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DEVICE MARKING AND RESISTOR VALUES
Device |
Marking |
R1 (K) |
R2 (K) |
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MMUN2111LT1 |
A6A |
10 |
10 |
MMUN2112LT1 |
A6B |
22 |
22 |
MMUN2113LT1 |
A6C |
47 |
47 |
MMUN2114LT1 |
A6D |
10 |
47 |
MMUN2115LT1(2) |
A6E |
10 |
∞ |
1.Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2.New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
Motorola, IncSmall±Signal. 1996 Transistors, FETs and Diodes Device Data
MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device |
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Marking |
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R1 (K) |
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R2 (K) |
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MMUN2116LT1(2) |
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A6F |
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4.7 |
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∞ |
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MMUN2130LT1(2) |
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A6G |
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1.0 |
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1.0 |
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MMUN2131LT1(2) |
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A6H |
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2.2 |
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2.2 |
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MMUN2132LT1(2) |
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A6J |
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4.7 |
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4.7 |
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MMUN2133LT1(2) |
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A6K |
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4.7 |
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47 |
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MMUN2134LT1(2) |
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A6L |
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22 |
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47 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Base Cutoff Current (VCB = 50 V, IE = 0) |
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ICBO |
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Ð |
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100 |
nAdc |
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Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) |
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ICEO |
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Ð |
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500 |
nAdc |
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Emitter-Base Cutoff Current |
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MMUN2111LT1 |
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IEBO |
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0.5 |
mAdc |
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(VEB = 6.0 V, IC = 0) |
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MMUN2112LT1 |
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0.2 |
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MMUN2113LT1 |
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0.1 |
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MMUN2114LT1 |
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0.2 |
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MMUN2115LT1 |
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0.9 |
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MMUN2116LT1 |
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1.9 |
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MMUN2130LT1 |
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4.3 |
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MMUN2131LT1 |
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2.3 |
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MMUN2132LT1 |
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1.5 |
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MMUN2133LT1 |
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0.18 |
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MMUN2134LT1 |
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0.13 |
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Collector-Base Breakdown Voltage (IC = 10 μA, IE = 0) |
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V(BR)CBO |
50 |
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Vdc |
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Collector-Emitter Breakdown Voltage(3) (I |
C |
= 2.0 mA, I |
B |
= 0) |
V |
50 |
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Vdc |
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(BR)CEO |
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ON CHARACTERISTICS(3) |
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DC Current Gain |
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MMUN2111LT1 |
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hFE |
35 |
60 |
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(VCE = 10 V, IC = 5.0 mA) |
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MMUN2112LT1 |
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60 |
100 |
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MMUN2113LT1 |
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80 |
140 |
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MMUN2114LT1 |
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80 |
140 |
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MMUN2115LT1 |
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160 |
250 |
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MMUN2116LT1 |
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160 |
250 |
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MMUN2130LT1 |
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3.0 |
5.0 |
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MMUN2131LT1 |
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8.0 |
15 |
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MMUN2132LT1 |
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15 |
27 |
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MMUN2133LT1 |
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80 |
140 |
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MMUN2134LT1 |
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80 |
130 |
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Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) |
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VCE(sat) |
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0.25 |
Vdc |
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(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 |
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(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ |
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MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 |
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Output Voltage (on) |
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VOL |
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Vdc |
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(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) |
MMUN2111LT1 |
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0.2 |
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MMUN2112LT1 |
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0.2 |
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MMUN2114LT1 |
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0.2 |
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MMUN2115LT1 |
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0.2 |
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MMUN2116LT1 |
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0.2 |
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MMUN2130LT1 |
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0.2 |
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MMUN2131LT1 |
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0.2 |
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MMUN2132LT1 |
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0.2 |
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MMUN2133LT1 |
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0.2 |
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MMUN2134LT1 |
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0.2 |
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(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) |
MMUN2113LT1 |
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Ð |
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0.2 |
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2.New devices. Updated curves to follow in subsequent data sheets.
3.Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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MMUN2111LT1 |
SERIES |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
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Unit |
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Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) |
VOH |
4.9 |
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Vdc |
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(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) |
MMUN2115LT1 |
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MMUN2116LT1 |
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MMUN2131LT1 |
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MMUN2132LT1 |
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(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) |
MMUN2130LT1 |
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Input Resistor |
MMUN2111LT1 |
R1 |
7.0 |
10 |
13 |
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k Ω |
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MMUN2112LT1 |
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15.4 |
22 |
28.6 |
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MMUN2113LT1 |
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32.9 |
47 |
61.1 |
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MMUN2114LT1 |
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7.0 |
10 |
13 |
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MMUN2115LT1 |
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7.0 |
10 |
13 |
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MMUN2116LT1 |
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3.3 |
4.7 |
6.1 |
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MMUN2130LT1 |
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0.7 |
1.0 |
1.3 |
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MMUN2131LT1 |
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1.5 |
2.2 |
2.9 |
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MMUN2132LT1 |
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3.3 |
4.7 |
6.1 |
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MMUN2133LT1 |
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3.3 |
4.7 |
6.1 |
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MMUN2134LT1 |
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15.4 |
22 |
28.6 |
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Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 |
R1/R2 |
0.8 |
1.0 |
1.2 |
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MMUN2114LT1 |
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0.17 |
0.21 |
0.25 |
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MMUN2115LT1/MMUN2116LT1 |
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Ð |
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MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 |
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0.8 |
1.0 |
1.2 |
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MMUN2133LT1 |
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0.055 |
0.1 |
0.185 |
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Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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