Motorola MCR218-10, MCR218-8, MCR218-6, MCR218-3, MCR218-4 Datasheet

1

Motorola Thyristor Device Data

Thyristors

Silicon-Controlled Rectifiers

. . . designed primarily for half-wave ac control applications, such as motor controls,

heating controls and power supplies; or wherever half-wave silicon gate-controlled,

solid-state devices are needed.

• Glass-Passivated Junctions

• Blocking Voltage to 800 Volts

• TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and

Durability

MAXIMUM RATINGS

(T

J

= 25°C unless otherwise noted.)

Rating

Symbol Value Unit

Peak Repetitive Forward and Reverse Voltage

(1)

(T

J

= 25 to 125°C, Gate Open) MCR218-2

MCR218-3

MCR218-4

MCR218-6

MCR218-8

MCR218-10

V

DRM

V

RRM

50

100

200

400

600

800

Volts

Forward Current RMS

(All Conduction Angles)

I

T(RMS)

8 Amps

Peak Forward Surge Current

(1/2 Cycle, Sine Wave, 60 Hz)

I

TSM

80 Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I

2

t 26 A

2

s

Forward Peak Gate Power P

GM

5 Watts

Forward Average Gate Power P

G(AV)

0.5 Watt

Forward Peak Gate Current I

GM

2 Amps

Operating Junction Temperature Range T

J

–40 to +125 °C

Storage Temperature Range T

stg

–40 to +150 °C

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

Order this document

by MCR218/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995

MCR218

Series

CASE 221A-04

(TO-220AB)

STYLE 3

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

K

G

A

 

2 Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

2 °C/W

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

Peak Forward or Reverse Blocking Current

(V

AK

= Rated V

DRM

or V

RRM

, Gate Open) T

J

= 25°C

T

J

= 125°C

I

DRM

, I

RRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage

(1)

(I

TM

= 16 A Peak)

V

TM

— 1.5 1.8 Volts

Gate Trigger Current (Continuous dc)

(V

D

= 12 V, R

L

= 100 Ohms)

I

GT

— 10 25 mA

Gate Trigger Voltage (Continuous dc)

(V

D

= 12 V, R

L

= 100 Ohms)

(Rated V

DRM

, R

L

= 1000 Ohms, T

J

= 125°C)

V

GT

—

0.2

—

—

1.5

—

Volts

Holding Current

(Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A,

0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)

I

H

— 16 30 mA

Critical Rate-of-Rise of Off-State Voltage

(V

D

= Rated V

DRM

, Exponential Waveform, Gate Open, T

J

= 125°C)

dv/dt — 100 — V/µs

1. Pulse Test: Pulse Width = 1 ms, Duty Cycle

p

2%.

60

°

7.06.05.04.03.02.01.0 8.0

3.0

6.0

9.0

α

= Conduction Angle

12

15

0.4

0.5

0.7

0.9

1.0

1.5

2.0

40

3.0

1401201008060–40 0 20–20

I

T(AV)

, AVERAGE ON-STATE FORWARD CURRENT (AMPS)

α

= CONDUCTION ANGLE

87654321

85

95

75

105

115

0

α

α

= 30

°

60

°

I

T(AV)

, AVG. ON-STATE CURRENT (AMPS)

FIGURE 2 — ON-STATE POWER DISSIPATION

0

90

°

120

°

180

°

dc

T

J

, JUNCTION TEMPERATURE (

°

C)

FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT

0.3

–60

V

D

= 12 Vdc

FIGURE 1 — CURRENT DERATING

0

dc

α

= 30

°

α

120

°

90

°

125

T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

C

°

P , AVERAGE ON-STATE POWER DISSIPATION

(AV)

(WATTS)

I , NORMALIZED GATE TRIGGER CURRENT (mA)

GT

180

°