Motorola MJD45H11-1, MJD44H11T4, MJD45H11, MJD44H11RL, MJD44H11 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJD44H11/D

Complementary Power

Transistors

DPAK For Surface Mount Applications

. . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

•Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (ª±1º Suffix)

•Lead Formed Version in 16 mm Tape and Reel for Surface Mount (ªT4º Suffix)

•Electrically Similar to Popular D44H/D45H Series

•Low Collector Emitter Saturation Voltage Ð V CE(sat) = 1.0 Volt Max @ 8.0 Amperes

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

MAXIMUM RATINGS

Rating	Symbol	D44H11 or D45H11	Unit
Collector±Emitter Voltage	VCEO	80	Vdc
Emitter±Base Voltage	VEB	5	Vdc
Collector Current Ð Continuous	IC	8	Adc
Peak		16
Total Power Dissipation	PD
@ TC = 25_C		20	Watts
Derate above 25_C		0.16	W/_C
Total Power Dissipation (1)	PD
@ TA = 25_C		1.75	Watts
Derate above 25_C		0.014	W/_C
Operating and Storage Junction	TJ, Tstg	± 55 to 150	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	6.25	_C/W
Thermal Resistance, Junction to Ambient (1)	RθJA	71.4	_C/W
Lead Temperature for Soldering	TL	260	_C

(1) These ratings are applicable when surface mounted on the minimum pad size recommended.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

NPN

MJD44H11*

PNP

MJD45H11*

*Motorola Preferred Device

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS

20 WATTS

CASE 369A±13

CASE 369±07

MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS

0.190	4.826
			0.165	4.191
		0.07	1.8
			0.118	3.0
0.243	0.063	1.6
	6.172		inches
				mm

Motorola, Inc. 1995

MJD44H11 MJD45H11

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector±Emitter Sustaining Voltage		VCEO(sus)	80	Ð	Ð	Vdc
(IC = 30 mA, IB = 0)
Collector Cutoff Current		ICES	Ð	Ð	10	μA
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current		IEBO	Ð	Ð	50	μA
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector±Emitter Saturation Voltage		VCE(sat)	Ð	Ð	1	Vdc
(IC = 8 Adc, IB = 0.4 Adc)
Base±Emitter Saturation Voltage		VBE(sat)	Ð	Ð	1.5	Vdc
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain		hFE	60	Ð	Ð	Ð
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain			40	Ð	Ð
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance		Ccb				pF
(VCB = 10 Vdc, ftest = 1 MHz)	MJD44H11		Ð	130	Ð
	MJD45H11		Ð	230	Ð
Gain Bandwidth Product		fT				MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)	MJD44H11		Ð	50	Ð
	MJD45H11		Ð	40	Ð
SWITCHING TIMES
Delay and Rise Times		td + tr				ns
(IC = 5 Adc, IB1 = 0.5 Adc)	MJD44H11		Ð	300	Ð
	MJD45H11		Ð	135	Ð
Storage Time		ts				ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)	MJD44H11		Ð	500	Ð
	MJD45H11		Ð	500	Ð
Fall Time		tf				ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)	MJD44H11		Ð	140	Ð
	MJD45H11		Ð	100	Ð

2	Motorola Bipolar Power Transistor Device Data