MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR106/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important.
•Glass-Passivated Surface for Reliability and Uniformity
•Power Rated at Economical Prices
•Practical Level Triggering and Holding Characteristics
•Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
MCR106
Series*
*Motorola preferred devices except MCR106±3
SCRs
4 AMPERES RMS
60 thru 600 VOLTS
G
A
K
G
A |
CASE 77-08 |
K |
|
|
(TO-225AA) |
|
STYLE 2 |
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Peak Repetitive Forward and Reverse Blocking Voltage(1) |
V |
|
Volts |
(TJ = 110°C, RGK = 1 kΩ) |
DRM |
|
|
and |
|
|
|
MCR106-2 |
VRRM |
60 |
|
MCR106-3 |
|
100 |
|
MCR106-4 |
|
200 |
|
MCR106-6 |
|
400 |
|
MCR106-8 |
|
600 |
|
|
|
|
|
RMS Forward Current |
IT(RMS) |
4 |
Amps |
(All Conduction Angles) |
|
|
|
|
|
|
|
Average Forward Current |
IT(AV) |
2.55 |
Amps |
TC = 93°C |
|
|
|
T = 30°C or |
|
|
|
A |
|
|
|
Peak Non-repetitive Surge Current |
ITSM |
25 |
Amps |
(1/2 Cycle, 60 Hz, TJ = ±40 to +110°C) |
|
|
|
Circuit Fusing Considerations |
I2t |
2.6 |
A2s |
(t = 8.3 ms) |
|
|
|
|
|
|
|
Peak Gate Power |
PGM |
0.5 |
Watt |
Average Gate Power |
PG(AV) |
0.1 |
Watt |
Peak Forward Gate Current |
IGM |
0.2 |
Amp |
Peak Reverse Gate Voltage |
VRGM |
6 |
Volts |
Operating Junction Temperature Range |
TJ |
±40 to +110 |
°C |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; |
(cont.) |
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages |
|
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. |
|
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MCR106 Series
MAXIMUM RATINGS Ð continued
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
Mounting Torque(1) |
Ð |
6 |
in. lb. |
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Case |
RθJC |
3 |
°C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
75 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C and RGK = 1000 Ohms unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
Peak Forward or Reverse Blocking Current |
IDRM, IRRM |
|
|
|
μA |
(VAK = Rated VDRM or VRRM) TJ = 25°C |
|
Ð |
Ð |
10 |
|
TJ = 110°C |
|
Ð |
Ð |
200 |
μA |
Forward ªOnº Voltage |
VTM |
Ð |
Ð |
2 |
Volts |
(ITM = 4 A Peak) |
|
|
|
|
|
Gate Trigger Current (Continuous dc)(2) |
I |
|
|
|
μA |
(VAK = 7 Vdc, RL = 100 Ohms) |
GT |
Ð |
Ð |
200 |
|
|
|
||||
(VAK = 7 Vdc, RL = 100 Ohms, TC = ±40°C) |
|
Ð |
Ð |
500 |
|
Gate Trigger Voltage (Continuous dc) |
VGT |
Ð |
Ð |
1 |
Volts |
(VAK = 7 Vdc, RL = 100 Ohms, TC = 25°C) |
|
|
|
|
|
Gate Non-Trigger Voltage |
VGD |
0.2 |
Ð |
Ð |
Volts |
(VAK = Rated VDRM, RL = 100 Ohms, TJ = 110°C) |
|
|
|
|
|
Holding Current |
IH |
Ð |
Ð |
5 |
mA |
(VAK = 7 Vdc, TC = 25°C) |
|
|
|
|
|
Forward Voltage Application Rate |
dv/dt |
Ð |
10 |
Ð |
V/μs |
(TJ = 110°C) |
|
|
|
|
|
1.Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B).
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended.
2.RGK current is not included in measurement.
2 |
Motorola Thyristor Device Data |
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