Motorola MJE700T, MJE800, MJE702, MJE803, MJE802 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Plastic Darlington

Complementary Silicon Power

Transistors

. . . designed for general±purpose amplifier and low±speed switching applications.

• High DC Current Gain Ð

hFE = 2000 (Typ) @ IC = 2.0 Adc

• Monolithic Construction with Built±in Base±Emitter Resistors to Limit Leakage

Multiplication

• Choice of Packages Ð

MJE700 and MJE800 series

T0220AB, MJE700T and MJE800T

MAXIMUM RATINGS

MJE702

MJE700,T

MJE703

MJE802

Rating

Symbol

MJE800,T

MJE803

Unit

Collector±Emitter Voltage

VCEO

60

80

Vdc

Collector±Base Voltage

VCB

60

80

Vdc

Emitter±Base Voltage

VEB

5.0

Vdc

Collector Current

IC

4.0

Adc

Base Current

IB

0.1

Adc

CASE 77

TO±220

Total Power Dissipation @ TC = 25_C

PD

40

50

Watts

Derate above 25_C

0.32

0.40

W/_C

Operating and Storage Junction

TJ, Tstg

± 55 to +150

_C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

_C/W

CASE 77

3.13

TO±220

2.50

(WATTS)

50

40

DISSIPATION

TO±220AB

30

TO±126

, POWER

20

10

D

P

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

REV 3

Order this document by MJE700/D

PNP

MJE700,T

MJE702

MJE703

NPN

MJE800,T

MJE802

MJE803

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS COMPLEMENTARY SILICON

40 WATT

50 WATT

CASE 77±08

TO±225AA TYPE

MJE700 ± 703

MJE800 ± 803

CASE 221A±06

TO±220AB

MJE700T

MJE800T

Motorola, Inc. 1995

MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage (1)	MJE700,T, MJE800,T	V(BR)CEO	60	Ð	Vdc
(IC = 50 mAdc, IB = 0)	MJE702, MJE703, MJE802, MJE803		80	Ð
Collector Cutoff Current		ICEO			μAdc
(VCE = 60 Vdc, IB = 0)	MJE700,T, MJE800,T		Ð	100
(VCE = 80 Vdc, IB = 0)	MJE702, MJE703, MJE802, MJE803		Ð	100
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)		ICBO	Ð	100	μAdc
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100_C)			Ð	500
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)		IEBO	Ð	2.0	mAdc
ON CHARACTERISTICS
DC Current Gain (1)		hFE			Ð
(IC = 1.5 Adc, VCE = 3.0 Vdc)	MJE700,T, MJE702, MJE800,T, MJE802		750	Ð
(IC = 2.0 Adc, VCE = 3.0 Vdc)	MJE703, MJE803		750	Ð
(IC = 4.0 Adc, VCE = 3.0 Vdc)	All devices		100	Ð
Collector±Emitter Saturation Voltage (1)		VCE(sat)			Vdc
(IC = 1.5 Adc, IB = 30 mAdc)	MJE700,T, MJE702, MJE800,T, MJE802		Ð	2.5
(IC = 2.0 Adc, IB = 40 mAdc)	MJE703, MJE803		Ð	2.8
(IC = 4.0 Adc, IB = 40 mAdc)	All devices		Ð	3.0
Base±Emitter On Voltage (1)		VBE(on)			Vdc
(IC = 1.5 Adc, VCE = 3.0 Vdc)	MJE700,T, MJE702, MJE800,T, MJE802		Ð	2.5
(IC = 2.0 Adc, VCE = 3.0 Vdc)	MJE703, MJE803		Ð	2.5
(IC = 4.0 Adc, VCE = 3.0 Vdc)	All devices		Ð	3.0
DYNAMIC CHARACTERISTICS
Small±Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)		hfe	1.0	Ð	Ð
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	VCC
	± 30 V
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA		RC
MSD6100 USED BELOW IB ≈ 100 mA			SCOPE
	TUT

V2			RB
APPROX
+ 8.0	V
	0	51	D1	≈ 6.0 k	≈ 150

V1

APPROX

+ 4.0 V

±12 V

25

μs

For td and tr, D1 id disconnected

tr, tf ≤ 10 ns

and V2 = 0, RB and RC are varied

to obtain desired test currents.

DUTY CYCLE = 1.0%

For NPN test circuit, reverse diode,

polarities and input pulses.

	4.0
				ts	VCC = 30 V		IB1 = IB2
					IC/IB = 250		TJ = 25°C
	2.0
μs)	1.0							tf
(
t, TIME
	0.8
	0.6							tr
	0.4						td @ VBE(off) = 0
				PNP
	0.2			NPN
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0

IC, COLLECTOR CURRENT (AMP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

	1.0
	0.7	D = 0.5
	0.5
	0.3	0.2
	0.2
	0.1	0.1
		0.05							ZθJC(t) = r(t) RθJC				P(pk)
	0.07
									RθJC = 2.50°C/W MAX
	0.05
		0.02							D CURVES APPLY FOR POWER
									PULSE TRAIN SHOWN				t1
	0.03													t2
	0.02			0.01					READ TIME AT t1
									TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t /t
		SINGLE PULSE													1 2
	0.01
		0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k
	0.01

t, TIME (ms)

Figure 4. Thermal Response (MJE700T, 800T Series)

2	Motorola Bipolar Power Transistor Device Data