MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications.
•High DC Current Gain Ð h FE = 1000 (Min) @ IC ± 20 Adc
•Monolithic Construction with Built±in Base Emitter Shunt Resistor
•Junction Temperature to +200_C
MAXIMUM RATINGS
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MJ11013 |
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MJ11015 |
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Rating |
Symbol |
MJ11012 |
MJ11014 |
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MJ11016 |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
90 |
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120 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
90 |
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120 |
Vdc |
Emitter±Base Voltage |
VEB |
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5 |
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Vdc |
Collector Current |
IC |
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30 |
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Adc |
Base Current |
IB |
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1 |
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Adc |
Total Device Dissipation @TC = 25_C |
PD |
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200 |
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Watts |
Derate above 25_C @ TC = 100_C |
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1.15 |
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W/_C |
Operating Storage Junction |
TJ, Tstg |
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± 55 to +200 |
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_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
0.87 |
_C/W |
Maximum Lead Temperature for |
TL |
275 |
_C |
Soldering Purposes for v 10 Seconds. |
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PNP
MJ11013
MJ11015
NPN
MJ11012
MJ11014 MJ11016*
*Motorola Preferred Device
30 AMPERE
DARLINGTON
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 120 VOLTS
200 WATTS
CASE 1±07 TO±204AA (TO±3)
PNP |
COLLECTOR |
MJ11013 |
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MJ11015 |
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BASE |
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≈ 8.0 k |
≈ 40 |
NPN |
COLLECTOR |
MJ11012 |
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MJ11014 |
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MJ11016 |
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BASE |
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≈ 8.0 k |
≈ 40 |
EMITTER |
EMITTER |
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
MJ11013 |
MJ11015 |
MJ11012 |
MJ11014 |
MJ11016 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.) |
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Characteristics |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage(1) |
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V(BR)CEO |
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Vdc |
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(IC = 100 mAdc, IB = 0) |
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MJ11012 |
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60 |
Ð |
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MJ11013, MJ11014 |
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90 |
Ð |
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MJ11015, MJ11016 |
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120 |
Ð |
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Collector±Emitter Leakage Current |
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ICER |
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mAdc |
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(VCE = 60 Vdc, RBE = 1k ohm) |
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MJ11012 |
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Ð |
1 |
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(VCE = 90 Vdc, RBE = 1k ohm) |
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MJ11013, MJ11014 |
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Ð |
1 |
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(VCE = 120 Vdc, RBE = 1k ohm) |
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MJ11015, MJ11016 |
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Ð |
1 |
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(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) |
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MJ11012 |
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Ð |
5 |
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(VCE = 90 Vdc, RBE = 1k ohm, TC = 150_C) |
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MJ11013, MJ11014 |
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Ð |
5 |
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(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C) |
MJ11015, MJ11016 |
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Ð |
5 |
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Emitter Cutoff Current |
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IEBO |
Ð |
5 |
mAdc |
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(VBE = 5 Vdc, IC = 0) |
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Collector±Emitter Leakage Current |
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ICEO |
Ð |
1 |
mAdc |
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(VCE = 50 Vdc, IB = 0) |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 20 Adc,VCE = 5 Vdc) |
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1000 |
Ð |
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(IC = 30 Adc, VCE = 5 Vdc) |
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200 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 20 Adc, IB = 200 mAdc) |
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Ð |
3 |
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(IC = 30 Adc, IB = 300 mAdc) |
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Ð |
4 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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Vdc |
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(IC = 20 A, IB = 200 mAdc) |
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Ð |
3.5 |
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(IC = 30 A, IB = 300 mAdc) |
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Ð |
5 |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Bandwidth Product |
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hfe |
4 |
Ð |
MHz |
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(IC = 10 A, VCE = 3 Vdc, f = 1 MHz) |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%. |
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2 |
Motorola Bipolar Power Transistor Device Data |
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