Fairchild Semiconductor IRF453, IRF452, IRF451, IRF450 Datasheet

IRF450

Data Sheet March 1999

13A, 500V, 0.400 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17435.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF450 TO-204AA IRF450

NOTE: When ordering, include the entire part number.

File Number

Features

• 13A, 500V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.400Ω

Components to PC Boards”

Symbol

D

G

1827.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

S

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF450

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF450 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

500 V
500 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 13 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
DM
GS

D

8.1 A
52 A

±20 V

125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

860 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Gate to Source Leakage I
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I
Drain to Source On Resistance (Note 2) r

D(ON)

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

GSS
DSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC
θJA

= 0V, ID = 250µA (Figure 10) 500 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VGS = ±20V - - ±100 nA
VDS = Rated BV
VDS= 0.8 x Rated BV
VDS>I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

DSS,VGS

= 0V, TJ= 125oC - - 250 µA

= 10V (Figure 7) 13 - - A

= 10V, ID = 7.2A (Figures 8, 9) - 0.3 0.400 Ω
VDS≥ 50V, ID = 7.2A (Figure 12) 6.0 11 - S
VDD= 250V, ID≈ 13A, RG = 6.2Ω, RL = 19Ω

(Figures 17, 18) MOSFET SwitchingTimes are
Essentially Independent of Operating
Temperature

-2027ns

-4066ns

- 72 100 ns

-3560ns

= 10V, ID= 13A, VDS= 0.8 x Rated BV

I

= 1.5mA(Figures14, 19, 20) Gate Charge

g(REF)

is Essentially Independent of Operating
Temperature

DSS

,

- 85 130 nC

-12- nC

-42- nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1800 - pF

- 400 - pF

- 100 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured from the
Source Lead, 6mm
(0.25in)fromthe Flange
to Source Bonding Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.83

o

C/W

o

C/W

2

IRF450

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 9.2mH, RG = 25Ω, peak IAS = 13A. See Figures 14, 15.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 13 A

- - 52 A

Junction Diode

G

S

TJ = 25oC, ISD= 13A, VGS = 0V (Figure 13) - - 1.4 V

SD

TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs 280 600 1200 ns

rr

TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs 3.2 7.5 14 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

1

o

0.5

0.2

0.1

0.001

THERMAL IMPEDANCE (

0.0001

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

, TRANSIENT

θJC

Z

15

12

9

6

DRAIN CURRENT (A)

D,

I

3

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

= PDM x Z

2

θJC

2

+ T

NOTES:
DUTY FACTOR: D = t1/t
PEAK T

J

0.1 1 10

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3