May 2002
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S
18A, 1200V Stealth™ Diode
General Description
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49414.
Features
• |
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . |
tb / ta > 5.0 |
• |
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . |
. trr < 45ns |
• |
Operating Temperature . . . . . . . . . . . . . . . . . |
. . . 150oC |
• |
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . |
. . . 1200V |
• |
Avalanche Energy Rated |
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Applications
•Switch Mode Power Supplies
•Hard Switched PFC Boost Diode
•UPS Free Wheeling Diode
•Motor Drive FWD
•SMPS FWD
•Snubber Diode
Package |
|
Symbol |
2 LEAD TO-247 |
JEDEC TO-220AC |
JEDEC TO-263AB |
ANODE |
ANODE |
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K |
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CATHODE |
CATHODE |
CATHODE |
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(FLANGE) |
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N / C |
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CATHODE |
ANODE |
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A |
CATHODE |
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(BOTTOM SIDE |
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(FLANGE) |
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METAL) |
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Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol |
Parameter |
Ratings |
Units |
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VRRM |
Repetitive Peak Reverse Voltage |
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1200 |
V |
VRWM |
Working Peak Reverse Voltage |
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|
1200 |
V |
VR |
DC Blocking Voltage |
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1200 |
V |
I |
Average Rectified Forward Current (T |
C |
= 92oC) |
18 |
A |
F(AV) |
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IFRM |
Repetitive Peak Surge Current (20kHz Square Wave) |
36 |
A |
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IFSM |
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) |
200 |
A |
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PD |
Power Dissipation |
|
|
125 |
W |
EAVL |
Avalanche Energy (1A, 40mH) |
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|
20 |
mJ |
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
°C |
||
TL |
Maximum Temperature for Soldering |
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TPKG |
Leads at 0.063in (1.6mm) from Case for 10s |
300 |
°C |
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Package Body for 10s, See Application Note AN-7528 |
260 |
°C |
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CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress nlyo rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ISL9R18120S3S / ISL9R18120P2 / ISL9R18120G2
©2002 Fairchild Semiconductor Corporation |
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A |
Package Marking and Ordering Information
Device Marking |
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Device |
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Package |
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Tape Width |
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Quantity |
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R18120G2 |
ISL9R18120G2 |
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TO-247 |
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N/A |
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30 |
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R18120P2 |
ISL9R18120P2 |
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TO-220AC |
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N/A |
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50 |
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R18120S3S |
ISL9R18120S3S |
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TO-263AB |
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24mm |
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800 |
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Electrical Characteristics TC = 25°C unless otherwise noted |
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Symbol |
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Parameter |
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Test Conditions |
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Min |
Typ |
Max |
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Units |
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Off State Characteristics |
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IR |
Instantaneous Reverse Current |
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VR = 1200V |
TC = 25°C |
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- |
- |
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100 |
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µA |
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TC = 125°C |
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- |
- |
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1.0 |
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mA |
On State Characteristics |
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VF |
Instantaneous Forward Voltage |
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IF = 18A |
TC = 25°C |
|
- |
2.7 |
3.3 |
|
V |
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TC = 125°C |
|
- |
2.5 |
3.1 |
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V |
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Dynamic Characteristics |
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CJ |
Junction Capacitance |
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VR = 10V, IF = 0A |
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- |
69 |
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- |
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pF |
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Switching Characteristics |
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trr |
Reverse Recovery Time |
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IF = 1A, dIF/dt = 100A/µs, VR = 30V |
|
- |
38 |
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45 |
|
ns |
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IF = 18A, dIF/dt = 100A/µs, VR = 30V |
|
- |
60 |
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70 |
|
ns |
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trr |
Reverse Recovery Time |
|
IF = 18A, |
|
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- |
300 |
- |
|
ns |
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I |
Maximum Reverse Recovery Current |
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dIF/dt = 200A/µs, |
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- |
6.5 |
- |
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A |
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RM(REC) |
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VR = 780V, TC = 25°C |
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QRR |
Reverse Recovered Charge |
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- |
950 |
- |
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nC |
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trr |
Reverse Recovery Time |
|
IF = 18A, |
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|
- |
400 |
- |
|
ns |
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S |
Softness Factor (t |
/t |
) |
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dIF/dt = 200A/µs, |
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|
- |
7.0 |
- |
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- |
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b |
a |
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VR = 780V, |
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IRM(REC) |
Maximum Reverse Recovery Current |
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- |
8.0 |
- |
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A |
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TC = 125°C |
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QRR |
Reverse Recovered Charge |
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- |
2.0 |
- |
|
µC |
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trr |
Reverse Recovery Time |
|
IF = 18A, |
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|
- |
235 |
- |
|
ns |
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S |
Softness Factor (t |
/t |
) |
|
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dIF/dt = 1000A/µs, |
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|
- |
5.2 |
- |
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- |
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b |
a |
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VR = 780V, |
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IRM(REC) |
Maximum Reverse Recovery Current |
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- |
22 |
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- |
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A |
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TC = 125°C |
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QRR |
Reverse Recovered Charge |
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- |
2.1 |
- |
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µC |
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dIM/dt |
Maximum di/dt during tb |
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- |
370 |
- |
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A/µs |
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Thermal Characteristics |
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Rθ JC |
Thermal Resistance Junction to Case |
|
TO-247, TO-220, TO-263 |
|
- |
- |
|
1.0 |
|
°C/W |
||||||
Rθ JA |
Thermal Resistance Junction to Ambient |
TO-247 |
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|
- |
- |
|
30 |
|
°C/W |
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Rθ JA |
Thermal Resistance Junction to Ambient |
TO-220, TO-263 |
|
|
- |
- |
|
62 |
|
°C/W |
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ISL9R18120S3S / ISL9R18120P2 / ISL9R18120G2
©2002 Fairchild Semiconductor Corporation |
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A |
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