Fairchild Semiconductor HUFA76445P3, HUFA76445S3S Datasheet

HUFA76445P3, HUFA76445S3S

	Data Sheet	November 2000	File Number 4987

75A, 60V, 0.0075 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB	JEDEC TO-263AB
SOURCE	DRAIN
DRAIN	(FLANGE)
GATE

GATE SOURCE

DRAIN (FLANGE)

HUFA76445P3

HUFA76445S3S

Symbol

D

G

S

Features

•Ultra Low On-Resistance

-rDS(ON) = 0.0065Ω, VGS = 10V

-rDS(ON) = 0.0075Ω, VGS = 5V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Electrical Models

-Spice and SABER Thermal Impedance Models

-www.Intersil.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Switching Time vs RGS Curves

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUFA76445P3	TO-220AB	76445P
HUFA76445S3S	TO-263AB	76445S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76445S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
					HUFA76445P3, HUFA76445S3S	UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . .VDSS		60	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . VDGR		60	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . .VGS		±16	V
Drain Current
Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . . ID		75	A
Continuous (T	C	= 25oC, V = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . I	D	75	A
		GS
Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . . ID		75	A
Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . .			. . . . . ID		75	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . IDM		Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . UIS		Figures 6, 17, 18
Power Dissipation		. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . PD		310	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . . .	.	2.08	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .			TJ, TSTG		-55 to 175	oC
Maximum Temperature for Soldering						oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . . . TL		300
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . .			. . . Tpkg		260	oC

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUFA76445P3, HUFA76445S3S Rev. A

HUFA76445P3, HUFA76445S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER	SYMBOL	TEST CONDITIONS			MIN	TYP	MAX	UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage	BVDSS	ID = 250µA, VGS = 0V (Figure 12)			60	-	-	V
		ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)			55	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS = 55V, VGS = 0V			-	-	1	µA
		VDS = 50V, VGS = 0V, TC = 150oC			-	-	250	µA
Gate to Source Leakage Current	IGSS	VGS = ±16V			-	-	±100	nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage	VGS(TH)	VGS = VDS, ID = 250µA (Figure 11)			1	-	3	V
Drain to Source On Resistance	rDS(ON)	ID = 75A, VGS = 10V (Figures 9, 10)			-	0.0054	0.0065	Ω
		ID = 75A, VGS = 5V (Figure 9)			-	0.0063	0.0075	Ω
		ID = 75A, VGS = 4.5V (Figure 9)			-	0.0066	0.008	Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case	RθJC	TO-220 and TO-263			-	-	0.48	oC/W
Thermal Resistance Junction to	RθJA				-	-	62	oC/W
Ambient
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time	tON	VDD = 30V, ID = 75A			-	-	515	ns
		VGS = 4.5V, RGS = 2.2Ω
Turn-On Delay Time	td(ON)				-	18	-	ns
		(Figures 15, 21, 22)
Rise Time	tr				-	325	-	ns
Turn-Off Delay Time	td(OFF)				-	39	-	ns
Fall Time	tf				-	135	-	ns
Turn-Off Time	tOFF				-	-	260	ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time	tON	VDD = 30V, ID = 75A			-	-	205	ns
		VGS = 10V,
Turn-On Delay Time	td(ON)				-	12	-	ns
		RGS = 2.4Ω
Rise Time	tr				-	126	-	ns
		(Figures 16, 21, 22)
Turn-Off Delay Time	td(OFF)				-	62	-	ns
Fall Time	tf				-	135	-	ns
Turn-Off Time	tOFF				-	-	295	ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge	Qg(TOT)	VGS = 0V to 10V		VDD = 30V,	-	124	150	nC
				ID = 75A,
Gate Charge at 5V	Qg(5)	VGS = 0V to 5V			-	68	81	nC
				Ig(REF) = 1.0mA
Threshold Gate Charge	Qg(TH)	VGS = 0V to 1V			-	5	6	nC
				(Figures 14, 19, 20)
Gate to Source Gate Charge	Qgs				-	14	-	nC
Gate to Drain “Miller” Charge	Qgd				-	30	-	nC
CAPACITANCE SPECIFICATIONS
Input Capacitance	CISS	VDS = 25V, VGS = 0V,			-	4965	-	pF
		f = 1MHz
Output Capacitance	COSS				-	1250	-	pF
		(Figure 13)
Reverse Transfer Capacitance	CRSS				-	150	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN		TYP	MAX	UNITS
Source to Drain Diode Voltage	VSD	ISD = 75A	-		-	1.25	V
		ISD = 35A	-		-	1.00	V
Reverse Recovery Time	trr	ISD = 75A, dISD/dt = 100A/µs	-		-	100	ns
Reverse Recovered Charge	QRR	ISD = 75A, dISD/dt = 100A/µs	-		-	260	nC
©2001 Fairchild Semiconductor Corporation				HUFA76445P3, HUFA76445S3S Rev. A

HUFA76445P3, HUFA76445S3S

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0						150
	0	25	50	75	100	125		175
			TC, CASE TEMPERATURE (oC)

	80
(A)						VGS = 10V
	60
CURRENT
					VGS = 4.5V
	40
, DRAIN
D	20
I
	0	50	75	100	125	150	175
	25
			TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE				CASE TEMPERATURE
		2	DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
	IMPEDANCE
NORMALIZED			0.1
			0.05
			0.02
			0.01
								PDM
		0.1
,	THERMAL
ZθJC								t1
								t2
								NOTES:
				SINGLE PULSE				DUTY FACTOR: D = t1/t2
		0.01						PEAK TJ = PDM x ZθJC x RθJC + TC
			10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

	2000						TC = 25oC
(A)							FOR TEMPERATURES
	1000						ABOVE 25oC DERATE PEAK
CURRENT
							CURRENT AS FOLLOWS:
							I = I25	175 - TC
		VGS = 10V						150
PEAK,
				VGS = 5V
DM
I	100	TRANSCONDUCTANCE
		MAY LIMIT CURRENT
	50	IN THIS REGION
	10-5		10-4	10-3	10-2	10-1	100	101
					t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corporation

HUFA76445P3, HUFA76445S3S Rev. A