Fairchild Semiconductor KA5S12656-TU, KA5S1265-YDTU, KA5S1265-TU, KA5S09654QT-YDTU, KA5S09654QT-TU Datasheet

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KA5S-SERIES

KA5S0765C/KA5S09654QT/KA5S0965/

KA5S12656/KA5S1265

Fairchild Power Switch(FPS)

Features

TO-3P-5L

•Wide Operating Frequency Range Up to 150Khz

•Lowest Cost SMPS Solution

•Lowest External Components

•Low Start-up Current (max:170uA)

• Low Operating Current (max:12mA)			1
•	Internal High Voltage SenseFET	TO-220F-5L	TO-220-5L
•	Over Voltage Protection With Latch Mode (Min23V)

•Over Load Protection With Latch Mode

•Over Current Protection With Latch Mode

•Internal Thermal Protection With Latch Mode

•	Pulse By Pulse Over Current Limiting	1	1
• Under Voltage Lockout With Hysteresis
•	External Sync. Terminal	1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync.

Internal Block Diagram

	VCC	Drain
	3		1

VCC UVLO

			+				Bias
			Vref			+	VREF UVLO
		15/9V	-			-
				2.5V				SenseFET
Soft Start
	5		-	OSC	CLK
& Sync
		Vth.sy
		VREF	+
			7V			S	Q
Feedback	4		6V	-
			2.5V			R
		0.95mA		+
			R
			VREF	Voffset
		4 A	VCC					VS
		OLP				S		Rsense
		(Vfb=7.5V)					Q	2	GND
		TSD	1 s Window			R
		(Tj=160° C)	Open Circuit			Shutdown Latch
		OVP	OCP	Power-on Reset
		(VCC=25V)	(VS=1.1V)	(VCC=6.5V)
								Rev.1.0.2

©2001 Fairchild Semiconductor Corporation

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265

Absolute Maximum Ratings

(Ta=25° C, unless otherwise specified)

	Characteristic	Symbol	Value	Unit
	KA5S0765C
	Maximum drain voltage	VD,MAX	650	V
	Drain-gate voltage(RGS=1MΩ)	VDGR	650	V
	Gate-source(GND) voltage	VGS	±30	V
	Drain current pulsed(1)	IDM	28	ADC
	Continuous drain current (Tc = 25° C)	ID	7.0	ADC
	Continuous drain current (Tc = 100° C)	ID	5.6	ADC
	Single pulsed avalanch current(3)(Energy (2))	IAS(EAS)	20(570)	A(mJ)
	Maximum supply voltage	VCC,MAX	30	V
	Input voltage range	VFB	-0.3 to VCC	V
		VSS	-0.3 to 8	V
	Total power dissipation	PD (Watt H/S)	135	W
		Derating	1.1	W / ° C
	Operating junction temperature.	TJ	+160	° C
	Operating ambient temperature.	TA	-25 to +85	° C
	Storage temperature range.	TSTG	-55 to +150	° C
	KA5S09654QT
	Maximum drain voltage	VD,MAX	650	V
	Drain-gate voltage(RGS=1MΩ)	VDGR	650	V
	Gate-source(GND) voltage	VGS	±30	V
	Drain current pulsed(1)	IDM	49	ADC
	Continuous drain current (Tc = 25° C)	ID	9.0	ADC
	Continuous drain current (Tc = 100° C)	ID	5.7	ADC
	Single pulsed avalanch current(3)(Energy (2))	IAS(EAS)	25(660)	A(mJ)
	Maximum supply voltage	VCC,MAX	30	V
	Input voltage range	VFB	-0.3 to VCC	V
		VSS	-0.3 to 8	V
	Total power dissipation	PD (Watt H/S)	160	W
		Derating	1.28	W / ° C
	Operating junction temperature.	TJ	+160	° C
	Operating ambient temperature.	TA	-25 to +85	° C
	Storage temperature range.	TSTG	-55 to +150	° C

2

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/

Absolute Maximum Ratings (Continued)

(Ta=25° C, unless otherwise specified)

	Characteristic	Symbol	Value	Unit
	KA5S0965
	Maximum Drain Voltage	VD,MAX	650	V
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	36	ADC
	Continuous Drain Current (Tc = 25° C)	ID	9.0	ADC
	Continuous Drain Current (Tc = 100° C)	ID	5.8	ADC
	Single Pulsed Avalanch Current(3)(Energy (2))	IAS(EAS)	28(950)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	30	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSS	-0.3 to 8	V
	Total Power Dissipation	PD (Watt H/S)	170	W
		Derating	1.33	W / ° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C
	KA5S12656
	Maximum Drain Voltage	VD,MAX	650	V
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	48	ADC
	Continuous Drain Current (Tc = 25° C)	ID	12	ADC
	Continuous Drain Current (Tc = 100° C)	ID	8.4	ADC
	Single Pulsed Avalanch Current(3)(Energy (2))	IAS(EAS)	30(785)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	30	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSS	-0.3 to 8	V
	Total Power Dissipation	PD (Watt H/S)	160	W
		Derating	1.28	W / ° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C

3

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265

Absolute Maximum Ratings (Continued)

(Ta=25° C, unless otherwise specified)

	Characteristic	Symbol	Value	Unit
	KA5S1265
	Maximum Drain Voltage	VD,MAX	650	V
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	48	ADC
	Continuous Drain Current (Tc = 25° C)	ID	12	ADC
	Continuous Drain Current (Tc = 100° C)	ID	8.4	ADC
	Single Pulsed Avalanch Current(3)(Energy (2))	IAS(EAS)	30(785)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	30	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSS	-0.3 to 8	V
	Total Power Dissipation	PD (Watt H/S)	160	W
		Derating	1.28	W / ° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C

Note:

1.Repetitive rating : Pulse width limited by maximum junction temperature

2.L = 10mH, VDD =50V, RG = 27Ω , starting Tj = 25° C

3.L = 13uH, starting Tj = 25° C

4

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/

Electrical Characteristics (SFET Part)

(Ta = 25° C unless otherwise specified)

	Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
	KA5S0765C
	Drain-source breakdown voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
			VDS=Max., Rating, VGS=0V	-	-	50	µ	A
	Zero gate voltage drain current	IDSS
			VDS=0.8Max., Rating,	-	-	200	µ	A
			VGS=0V, TC=125° C
	Static drain-source on resistance(1)	RDS(on)	VGS=10V, ID=4.0A	-	1.25	1.6	Ω
	Forward transconductance(1)	gfs	VDS=15V, ID=4.0A	3.0	-	-	S
	Input capacitance	Ciss	VGS=0V, VDS=25V,	-	1600	-
	Output capacitance	Coss		-	310	-
			f = 1MHz				pF
	Reverse transfer capacitance	Crss		-	120	-
	Turn on delay time	td(on)	VDD=0.5BVDSS, ID=7.0A	-	25	-
			(MOSFET switching
	Rise time	tr		-	55	-
			time are essentially
	Turn off delay time	td(off)		-	80	-
			independent of				nS
	Fall time	tf	operating temperature)	-	50	-
	Total gate charge	Qg	VGS=10V, ID=7.0A,	-	-	72
	(gate-source+gate-drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-source charge	Qgs		-	9.3	-
			Essentially independent of				nC
	Gate-drain (Miller) charge	Qgd		-	29.3	-
			Operating temperature)
	KA5S09654QT
	Drain-source breakdown voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
			VDS=Max., Rating, VGS=0V	-	-	200	µ	A
	Zero gate voltage drain current	IDSS
			VDS=0.8Max., Rating,	-	-	300	µ	A
			VGS=0V, TC=125° C
	Static drain-source on resistance(1)	RDS(on)	VGS=10V, ID=4.5A	-	1.1	1.2	Ω
	Forward transconductance(1)	gfs	VDS=50V, ID=4.5A	3.0	-	-	S
	Input capacitance	Ciss	VGS=0V, VDS=25V,	-	1300	-
	Output capacitance	Coss		-	135	-
			f = 1MHz				pF
	Reverse transfer capacitance	Crss		-	25	-
	Turn on delay time	td(on)	VDD=0.5BVDSS, ID=9.0A	-	25	-
			(MOSFET switching
	Rise time	tr		-	75	-
			time are essentially
	Turn off delay time	td(off)		-	130	-
			independent of				nS
	Fall time	tf	operating temperature)	-	70	-
	Total gate charge	Qg	VGS=10V, ID=9.0A,		45	-
	(gate-source+gate-drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-source charge	Qgs		-	8	-
			Essentially independent of				nC
	Gate-drain (Miller) charge	Qgd		-	22	-
			Operating temperature)

5

KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265

Electrical Characteristics (SFET Part; Continued)

(Ta = 25° C unless otherwise specified)

	Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
	KA5S0965
	Drain-source breakdown voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
			VDS=Max., Rating, VGS=0V	-	-	50	µ	A
	Zero gate voltage drain current	IDSS
			VDS=0.8Max., Rating,	-	-	200	µ	A
			VGS=0V, TC=125° C
	Static drain-source on resistance(1)	RDS(on)	VGS=10V, ID=4.5A	-	0.96	1.2	Ω
	Forward transconductance(1)	gfs	VDS=50V, ID=4.5A	5.0	-	-	S
	Input capacitance	Ciss	VGS=0V, VDS=25V,	-	1750	-
	Output capacitance	Coss		-	190	-
			f = 1MHz				pF
	Reverse transfer capacitance	Crss		-	78	-
	Turn on delay time	td(on)	VDD=0.5BVDSS, ID=9.0A	-	20	50
			(MOSFET switching
	Rise time	tr		-	23	55
			time are essentially
	Turn off delay time	td(off)		-	85	180
			independent of				nS
	Fall time	tf	operating temperature)	-	30	70
	Total gate charge	Qg	VGS=10V, ID=9.0A,	-	74	95
	(gate-source+gate-drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-source charge	Qgs		-	12	-
			Essentially independent of				nC
	Gate-drain (Miller) charge	Qgd		-	35	-
			Operating temperature)
	KA5S12656
	Drain-source breakdown voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
			VDS=Max., Rating, VGS=0V	-	-	50	µ	A
	Zero gate voltage drain current	IDSS
			VDS=0.8Max., Rating,	-	-	200	µ	A
			VGS=0V, TC=125° C
	Static drain-source on resistance(1)	RDS(on)	VGS=10V, ID=6.0A	-	0.72	0.9	Ω
	Forward transconductance(1)	gfs	VDS=50V, ID=4.0A	5.7	-	-	S
	Input capacitance	Ciss	VGS=0V, VDS=25V,	-	2700	-
	Output capacitance	Coss		-	300	-
			f = 1MHz				pF
	Reverse transfer capacitance	Crss		-	61	-
	Turn on delay time	td(on)	VDD=0.5BVDSS, ID=12.0A	-	18	-
			(MOSFET switching
	Rise time	tr		-	37	-
			time are essentially
	Turn off delay time	td(off)		-	88	-
			independent of				nS
	Fall time	tf	operating temperature)	-	36	-
	Total gate charge	Qg	VGS=10V, ID=12.0A,	-	-	140
	(gate-source+gate-drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-source charge	Qgs		-	20	-
			Essentially independent of				nC
	Gate-drain (Miller) charge	Qgd		-	69	-
			Operating temperature)

6