Fairchild Semiconductor KA5H0165RN, KA5H0165R, KA5M0165RN, KA5L0165RN, KA5L0165R Datasheet

www.fairchildsemi.com

KA5x0165Rxx-SERIES

KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN, KA5H0165RVN

Fairchild Power Switch(FPS)

Features

•Precision Fixed Operating Frequency (100/67/50kHz )

•Low Start-up Current (Typ. 100uA)

•Pulse by Pulse Current Limiting

•Over Load Protection

•Over Voltage Protection (Min. 25V)

-except KA5H0165RVN

•Internal Thermal Shutdown Function

•Under Voltage Lockout

•Internal High Voltage Sense FET

•Auto-Restart Mode

Internal Block Diagram

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry compared to discrete MOSFET and controller or RCC switching converter solution, The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It is well suited for cost effective design of flyback converters.

TO-220F-4L			8-DIP
1			1
		1.6.7.8. Drain
1.	GND
2.	Drain	2.	GND
3.	Vcc	3.	Vcc
4.	FB	4.	FB
		5. NC

VCC
32V				5V	Internal	DRAIN
				Vref	bias	SFET
					Good
					logic
				OSC
					S
uA					R Q
FB		2.5R		−	L.E.B
5µ A	1mA			+
	9V	1R
					0.1V
	+
7.5V	−				S	GND
	+		Thermal S/D		R Q
27V	−				Power on reset
		OVER VOLTAGE S/D
						Rev.1.0.5

©2003 Fairchild Semiconductor Corporation

KA5X0165RXX-SERIES

Absolute Maximum Ratings

(Ta=25° C, unless otherwise specified)

	Characteristic	Symbol	Value	Unit
	Drain-Gate Voltage (RGS=1MΩ )	VDGR	650	V
	Gate-Source (GND) Voltage	VGS	± 30	V
	Drain Current Pulsed (1)	IDM	4.0	ADC
	Continuous Drain Current (TC=25° C)	ID	1.0	ADC
	Continuous Drain Current (TC=100° C)	ID	0.7	ADC
	Single Pulsed Avalanche Energy (2)	EAS	95	mJ
	Maximum Supply Voltage	VCC,MAX	30	V
	Analog Input Voltage Range	VFB	-0.3 to VSD	V
	Total Power Dissipation	PD	40	W
		Derating	0.32	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C

Note:

1.Repetitive rating: Pulse width limited by maximum junction temperature

2.L=24mH, starting Tj=25° C

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KA5X0165RXX-SERIES

Electrical Characteristics (SFET Part)

(Ta=25° C unless otherwise specified)

Parameter				Symbol	Condition	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage				BVDSS	VGS=0V, ID=50µ A	650	-	-	V
Zero Gate Voltage Drain Current				IDSS	VDS=Max. Rating, VGS=0V	-	-	50	µ	A
					VDS=0.8Max. Rating,	-	-	200	µ	A
					VGS=0V, TC=125° C
Static Drain-Source on Resistance (Note)				RDS(ON)	VGS=10V, ID=0.5A	-	8	10	Ω
Forward Transconductance (Note)				gfs	VDS=50V, ID=0.5A	0.5	-	-	S
Input Capacitance				Ciss	VGS=0V, VDS=25V,	-	250	-
Output Capacitance				Coss		-	25	-	pF
					f=1MHz
Reverse Transfer Capacitance				Crss		-	10	-
Turn on Delay Time				td(on)	VDD=0.5B VDSS, ID=1.0A	-	12	-
Rise Time				tr		-	4	-
					(MOSFET switching time is				nS
Turn Off Delay Time				td(off)	essentially independent of	-	30	-
					operating temperature)
Fall Time				tf		-	10	-
Total Gate Charge				Qg	VGS=10V, ID=1.0A,	-	-	21
(Gate-Source+Gate-Drain)					VDS=0.5B VDSS (MOSFET
									nC
					switching time is essentially
Gate-Source Charge				Qgs		-	3	-
					independent of operating
Gate-Drain (Miller) Charge				Qgd		-	9	-
					temperature)
Note:
1. Pulse test: Pulse width ≤ 300 S, duty cycle ≤				2%
2.	S =	1
		---
		R

3

KA5X0165RXX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta=25° C unless otherwise specified)

Parameter	Symbol	Condition			Min.	Typ.	Max.	Unit
UVLO SECTION
Start Threshold Voltage	VSTART	VFB=GND			14	15	16	V
Stop Threshold Voltage	VSTOP	VFB=GND			8.2	8.8	9.4	V
OSCILLATOR SECTION
Initial Accuracy	FOSC	KA5H0165Rxx			90	100	110	kHz
Initial Accuracy	FOSC	KA5M0165Rx			61	67	73	kHz
Initial Accuracy	FOSC	KA5L0165Rx			45	50	55	kHz
Frequency Change With Temperature (2)	∆ F/∆ T	-25° C ≤ Ta ≤ +85° C			-	± 5	± 10	%
Maximum Duty Cycle	Dmax	KA5H0165Rxx			62	67	72	%
Maximum Duty Cycle	Dmax	KA5M0165Rx			72	77	82	%
		KA5L0165Rx
FEEDBACK SECTION
Feedback Source Current	IFB	Ta=25° C, 0V ≤	Vfb ≤	3V	0.7	0.9	1.1	mA
Shutdown Feedback Voltage	VSD	Vfb ≥ 6.5V			6.9	7.5	8.1	V
Shutdown Delay Current	Idelay	Ta=25° C, 3V ≤	Vfb ≤	VSD	4	5	6	A
REFERENCE SECTION
Output Voltage (1)	Vref	Ta=25° C			4.80	5.00	5.20	V
Temperature Stability (1)(2)	Vref/∆ T	-25° C ≤ Ta ≤ +85° C			-	0.3	0.6	mV/° C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit	IOVER	Max. inductor current			0.53	0.6	0.67	A
PROTECTION SECTION
Thermal Shutdown Temperature (1)	TSD	-			140	160	-	° C
Over Voltage Protection	VOVP	except KA5H0165RVN			25	27	29	V
TOTAL STANDBY CURRENT SECTION
Start-up Current	ISTART	VCC=14V			-	100	170	A
Operating Supply Current	IOP	VCC ≤ 28			-	7	12	mA
(Control Part Only)

Note:

1.These parameters, although guaranteed, are not 100% tested in production

2.These parameters, although guaranteed, are tested in EDS (wafer test) process

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