Fairchild Semiconductor IRFW634B, IRFI634B Datasheet

November 2001

IRFW634B / IRFI634B

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features

• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V

•Low gate charge ( typical 29 nC)

•Low Crss ( typical 20 pF)

•Fast switching

•100% avalanche tested

•Improved dv/dt capability

D

D

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●

G!

●

▲

●

G

S

D2-PAK

G D S

I2-PAK

IRFW Series

IRFI Series

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

Parameter

IRFW634B / IRFI634B

Units

VDSS

Drain-Source Voltage

250

V

ID

Drain Current

- Continuous (TC = 25°C)

8.1

A

- Continuous (TC = 100°C)

5.1

A

IDM

Drain Current

- Pulsed

(Note 1)

32.4

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

200

mJ

IAR

Avalanche Current

(Note 1)

8.1

A

EAR

Repetitive Avalanche Energy

(Note 1)

7.4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

PD

Power Dissipation (TA = 25°C) *

3.13

W

Power Dissipation (TC = 25°C)

74

W

- Derate above 25°C

0.59

W/°C

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

Rθ

JC

Thermal Resistance, Junction-to-Case

--

1.69

°C/W

Rθ

JA

Thermal Resistance, Junction-to-Ambient *

--

40

°C/W

Rθ

JA

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

IRFI634B / IRFW634B

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

	Electrical Characteristics TC = 25°C unless otherwise noted
	Symbol		Parameter	Test Conditions		Min	Typ	Max	Units
	Off Characteristics
	BVDSS		Drain-Source Breakdown Voltage	VGS = 0 V, ID = 250 µ A		250	--	--	V
	∆	BVDSS	Breakdown Voltage Temperature	ID = 250 µ A, Referenced to 25°C		--	0.27	--	V/°C
	/	∆ TJ	Coefficient
	IDSS		Zero Gate Voltage Drain Current	VDS = 250 V, VGS = 0 V		--	--	10	µ	A
				VDS = 200 V, TC = 125°C		--	--	100	µ	A
	IGSSF		Gate-Body Leakage Current, Forward	VGS = 30 V, VDS = 0 V		--	--	100	nA
	IGSSR		Gate-Body Leakage Current, Reverse	VGS = -30 V, VDS = 0 V		--	--	-100	nA
	On Characteristics
	VGS(th)		Gate Threshold Voltage	VDS = VGS, ID = 250 µ A		2.0	--	4.0	V
	RDS(on)		Static Drain-Source	VGS = 10 V, ID = 4.05 A		--	0.345	0.45	Ω
			On-Resistance
	gFS		Forward Transconductance	VDS = 40 V, ID = 4.05 A (Note 4)		--	7.6	--	S
	Dynamic Characteristics
	Ciss		Input Capacitance	VDS = 25 V, VGS = 0 V,		--	780	1000	pF
	Coss		Output Capacitance	f = 1.0 MHz		--	95	125	pF
	Crss		Reverse Transfer Capacitance			--	20	25	pF
	Switching Characteristics
	td(on)		Turn-On Delay Time	VDD = 125 V, ID = 8.1 A,		--	15	40	ns
	tr		Turn-On Rise Time			--	75	160	ns
				RG = 25 Ω
	td(off)		Turn-Off Delay Time		(Note 4, 5)	--	100	210	ns
	tf		Turn-Off Fall Time			--	65	140	ns
	Qg		Total Gate Charge	VDS = 200 V, ID = 8.1 A,		--	29	38	nC
	Qgs		Gate-Source Charge	VGS = 10 V		--	4.2	--	nC
	Qgd		Gate-Drain Charge		(Note 4, 5)	--	14	--	nC
	Drain-Source Diode Characteristics and Maximum Ratings
	IS		Maximum Continuous Drain-Source Diode Forward Current			--	--	8.1	A
	ISM		Maximum Pulsed Drain-Source Diode Forward Current			--	--	32.4	A
	VSD		Drain-Source Diode Forward Voltage	VGS = 0 V, IS = 8.1 A		--	--	1.5	V
	trr		Reverse Recovery Time	VGS = 0 V, IS = 8.1 A,	(Note 4)	--	170	--	ns
	Qrr		Reverse Recovery Charge	dIF / dt = 100 A/µ s		--	0.91	--	µ	C

Notes:

1.	Repetitive Rating : Pulse width limited by maximum junction temperature
2.	L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3.ISD ≤ 8.1A, di/dt ≤ 300A/µ s, VDD ≤ BVDSS, Starting TJ = 25°C

4.Pulse Test : Pulse width ≤ 300µ s, Duty cycle ≤ 2%

5.Essentially independent of operating temperature

IRFI634B / IRFW634B

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

Typical Characteristics

	Top :	VGS
		15.0 V
		10.0V
		8.0V
	1	7.0V
	10	6.5V
		6.0V
		5.5V
Current [A]	Bottom :	5.0 V
, Drain	100
D
I
			Notes :
			1. 250μ s Pulse Test
			2. TC = 25
	10-1	100	101
	10-1

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

	2.5
[Ω ], Resistance-On	2.0			VGS = 10V
	1.5			VGS = 20V
DS(ON)	0.5
R Source-Drain
	1.0
						Note : TJ
							= 25
	0.0	6	12	18		24	30
	0

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

	2000		Ciss	= Cgs	+ Cgd (Cds = shorted)
			Coss	= Cds	+ Cgd
			Crss	= Cgd
	1500
			Ciss
[pF]
Capacitance	1000		Coss
	500		Crss		Notes :
					1. VGS = 0 V
					2. f = 1 MHz
	0
	10-1	100	101

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

					/ IRFW634B
101					IRFI634B
CurrentDrain [A]		25oC
		150oC
100
,			-55oC
I
D
				Notes :
				1. VDS	= 40V
				2. 250μ s PulseTest
10-1	2	4	6	8	10

VGS, Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

	101
Drain Current [A]	100
Reverse				150	25
,							Notes :
DR
							1. VGSμ= 0V
I
							2. 250	s PulseTest
	-1
	10	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6

VSD, Source-Drain voltage [V]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

	12
	10			VDS = 50V
				VDS = 125V
[V]
	8			VDS = 200V
Voltage
	6
Gate-Source
	4
,
GS	2
V
						Note: ID = 8.1 A
	0	5	10	15	20	25	30
	0
			QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001