Fairchild Semiconductor H21A3, H21A2, H21A1 Datasheet

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Fairchild Semiconductor H21A3, H21A2, H21A1 Datasheet

H21A1 / H21A2 / H21A3

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

PACKAGE DIMENSIONS

0.972 (24.7)

0.957 (24.3)

0.472

(12.0)

Ø 0.133 (3.4)

Ø 0.126 (3.2)

0.457

(11.6)

(2X)

C

 

 

L

 

0.249 (6.35)

+

D

C

0.243 (6.15)

 

 

L

E

+

 

 

0.39 (1.00)

 

 

 

 

 

 

0.34 (0.85)

0.755 (19.2)

0.745 (18.9)

.073 (1.85)

0.129 (3.3)

 

0.119 (3.0)

 

.133 (3.38)

 

 

 

 

 

Optical

 

0.433 (11.0)

C

 

L

 

0.422 (10.7)

 

0.125 (3.2)

0.315 (8.0)

 

0.119 (3.0)

 

 

 

 

C

 

.295 (7.5)

L

0.110 (2.8)

 

.272 (6.9)

 

0.091 (2.3)

 

 

PIN 1 ANODE

 

 

PIN 2 CATHODE

2

3

PIN 3 COLLECTOR

1

4

PIN 4 EMITTER

 

0.020 (0.51) (SQ)

 

NOTES:

1.Dimensions for all drawings are in inches (mm).

2.Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.

DESCRIPTION

 

 

The H21A1, H21A2 and H21A3 consist of a

 

gallium arsenide infrared emitting diode

 

 

coupled with a silicon phototransistor in a

 

plastic housing. The packaging system is

 

designed to optimize the mechanical

 

 

resolution, coupling efficiency, ambient light

 

rejection, cost and reliability. The gap in the

 

housing provides a means of interrupting the

 

signal with an opaque material, switching the

 

output from an “ON” to an “OFF” state. SCHEMATIC

 

FEATURES

1

4

• Opaque housing

 

 

• Low cost

 

 

• .035” apertures

2

3

High IC(ON)

1.Derate power dissipation linearly 1.33 mW/°C above 25°C.

2.RMA flux is recommended.

3.Methanol or isopropyl alcohols are recommended as cleaning agents.

4.Soldering iron tip 1/16” (1.6mm) minimum from housing.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

 

Parameter

Symbol

Rating

Unit

 

 

Operating Temperature

TOPR

-55 to +100

°C

 

 

Storage Temperature

TSTG

-55 to +100

°C

 

 

Soldering Temperature (Iron)(2,3 and 4)

TSOL-I

240 for 5 sec

°C

 

 

Soldering Temperature (Flow)(2 and 3)

TSOL-F

260 for 10 sec

°C

 

 

INPUT (EMITTER)

IF

50

mA

 

 

Continuous Forward Current

 

 

 

 

 

 

 

Reverse Voltage

VR

6

V

 

 

Power Dissipation (1)

PD

100

mW

 

 

OUTPUT (SENSOR)

VCEO

30

V

 

 

Collector to Emitter Voltage

 

 

Emitter to Collector Voltage

VECO

4.5

V

 

 

Collector Current

IC

20

mA

 

 

Power Dissipation (TC = 25°C)(1)

PD

150

mW

 

2001 Fairchild Semiconductor Corporation

 

 

DS300290

5/02/01

1 OF 5

www.fairchildsemi.com

H21A1 / H21A2 / H21A3

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)(All measurements made under pulse condition)

 

PARAMETER

TEST CONDITIONS

SYMBOL

DEVICES

MIN

TYP

MAX

UNITS

 

 

INPUT (EMITTER)

IF = 60 mA

VF

All

1.7

V

 

 

Forward Voltage

 

 

 

 

 

 

 

 

 

 

 

Reverse Breakdown Voltage

IR = 10 µ A

VR

All

6.0

V

 

 

Reverse Leakage Current

VR = 3 V

IR

All

1.0

µA

 

 

OUTPUT (SENSOR)

IF = 100 µ A, Ee = 0

BVECO

All

6.0

V

 

 

Emitter to Collector Breakdown

 

 

 

 

 

 

 

 

 

 

 

Collector to Emitter Breakdown

IC = 1 mA, Ee = 0

BVCEO

All

30

V

 

 

Collector to Emitter Leakage

VCE = 25 V, Ee = 0

ICEO

All

100

nA

 

 

COUPLED

IF = 5 mA, VCE = 5 V

 

H21A1

0.15

 

 

 

 

 

H21A2

0.30

 

 

 

 

 

 

H21A3

0.60

 

 

 

On-State Collector Current

IF = 20 mA, VCE = 5 V

IC(ON)

H21A1

1.0

mA

 

 

H21A2

2.0

 

 

 

 

 

H21A3

4.0

 

 

 

 

IF = 30 mA, VCE = 5 V

 

H21A1

1.9

 

 

 

 

 

H21A2

3.0

 

 

 

 

 

 

H21A3

5.5

 

 

 

Saturation Voltage

IF = 20 mA, IC = 1.8 mA

VCE(SAT)

H21A2/3

0.40

V

 

 

IF = 30 mA, IC = 1.8 mA

H21A1

0.40

V

 

 

 

 

 

 

Turn-On Time

IF = 30 mA, VCC = 5 V, RL = 2.5 KΩ

ton

All

8

µs

 

 

Turn-Off Time

IF = 30 mA, VCC = 5 V, RL = 2.5 KΩ

toff

All

50

µs

 

www.fairchildsemi.com

2 OF 5

5/02/01 DS300290

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