Fairchild Semiconductor ISL9V3036S3S, ISL9V3036P3, ISL9V3036D3S Datasheet

April 2002

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3

EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

General Description

The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49442

Applications

•Automotive Ignition Coil Driver Circuits

•CoilOn Plug Applications

Features

•Industry Standard D2-Pak package

•SCIS Energy = 300mJ at TJ = 25oC

•Logic Level Gate Drive

Package

Symbol

COLLECTOR

JEDEC TO-252AA

JEDEC TO-263AB

JEDEC TO-220AB

E

D-Pak

D²-Pak

C

G

R1

G

G

GATE

R2

E

E

COLLECTOR

COLLECTOR

EMITTER

(FLANGE)

(FLANGE)

Device Maximum Ratings TJ = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BVCER

Collector to Emitter Breakdown Voltage (IC = 1 mA)

360

V

BVECS

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)

24

V

ESCIS25

TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy

300

mJ

ESCIS150

TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy

170

mJ

IC25

Collector Current Continuous, At TC = 25°C, See Fig 9

21

A

IC110

Collector Current Continuous, At TC = 110°C, See Fig 9

17

A

VGEM

Gate to Emitter Voltage Continuous

±10

V

PD

Power Dissipation Total TC = 25°C

150

W

Power Dissipation Derating TC > 25°C

1.0

W/°C

TJ

Operating Junction Temperature Range

-40 to 175

°C

TSTG

Storage Junction Temperature Range

-40 to 175

°C

TL

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

300

°C

Tpkg

Max Lead Temp for Soldering (Package Body for 10s)

260

°C

ESD

Electrostatic Discharge Voltage at 100pF, 1500Ω

4

kV

ISL9V3036P3 / ISL9V3036S3S / ISL9V3036D3S

©2002 Fairchild Semiconductor Corporation

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002

Package Marking and Ordering Information

Device Marking	Device	Package	Tape Width	Quantity
V3036D	ISL9V3036D3S	TO-252AA	16mm	2500
V3036S	ISL9V3036S3S	TO-263AB	24mm	800
V3036P	ISL9V3036P3	TO-220AA	-	-

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCER	Collector to Emitter Breakdown Voltage	IC = 2mA, VGE = 0,		330	360	390	V
		RG = 1KΩ, See Fig. 15
		TJ = -40 to 150°C
BVCES	Collector to Emitter Breakdown Voltage	IC = 10mA, VGE = 0,		350	380	410	V
		RG = 0, See Fig. 15
		TJ = -40 to 150°C
BVECS	Emitter to Collector Breakdown Voltage	IC = -75mA, VGE = 0V,		30	-	-	V
		TC = 25°C
BVGES	Gate to Emitter Breakdown Voltage	IGES = ± 2mA		±12	±14	-	V
ICER	Collector to Emitter Leakage Current	VCER = 250V,	TC = 25°C	-	-	25	µA
		RG = 1KΩ,	T = 150°C	-	-	1	mA
		See Fig. 11	C
IECS	Emitter to Collector Leakage Current	VEC = 24V, See	TC = 25°C	-	-	1	mA
		Fig. 11	TC = 150°C	-	-	40	mA
R1	Series Gate Resistance			-	70	-	Ω
R2	Gate to Emitter Resistance			10K	-	26K	Ω

On State Characteristics

VCE(SAT)	Collector to Emitter Saturation Voltage	IC = 6A,	TC = 25°C,	-	1.25	1.60	V
		VGE = 4V	See Fig. 3
VCE(SAT)	Collector to Emitter Saturation Voltage	IC = 10A,	TC = 150°C,	-	1.58	1.80	V
		VGE = 4.5V	See Fig. 4
VCE(SAT)	Collector to Emitter Saturation Voltage	IC = 15A,	TC = 150°C	-	1.90	2.20	V
		VGE = 4.5V

Dynamic Characteristics

QG(ON)	Gate Charge	IC = 10A, VCE = 12V,		-	17	-	nC
		VGE = 5V, See Fig. 14
VGE(TH)	Gate to Emitter Threshold Voltage	IC = 1.0mA,	TC = 25°C	1.3	-	2.2	V
		VCE = VGE,	TC = 150°C	0.75	-	1.8	V
		See Fig. 10
VGEP	Gate to Emitter Plateau Voltage	IC = 10A,		-	3.0	-	V
		VCE = 12V

Switching Characteristics

td(ON)R	Current Turn-On Delay Time-Resistive	VCE = 14V, RL = 1Ω,	-	0.7	4	µs
t	Current Rise Time-Resistive	VGE = 5V, RG = 1KΩ	-	2.1	7	µs
rR		TJ = 25°C, See Fig. 12
td(OFF)L	Current Turn-Off Delay Time-Inductive	VCE = 300V, RL = 500µH,	-	4.8	15	µs
tfL	Current Fall Time-Inductive	VGE = 5V, RG = 1KΩ	-	2.8	15	µs
		TJ = 25°C, See Fig. 12
SCIS	Self Clamped Inductive Switching	TJ = 25°C, L = 3.0 mH,	-	-	300	mJ
		RG = 1KΩ, VGE = 5V, See
		Fig. 1 & 2

Thermal Characteristics

Rθ JC

Thermal Resistance Junction-Case

TO-252, TO-263, TO-220

-

-

1.0

°C/W

ISL9V3036P3 / ISL9V3036S3S / ISL9V3036D3S

©2002 Fairchild Semiconductor Corporation

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002

Typical Performance Curves (Continued)

(A)	30				RG = 1kΩ , VGE = 5V, Vdd = 14V
CURRENT	25
	20
SWITCHING
	15							TJ = 25°C
INDUCTIVE	10	TJ = 150°C
	5
,
SCIS		SCIS Curves valid for Vclamp Voltages of <390V
I	0
	0	25	50	75	100	125	150	175	200
				tCLP, TIME IN CLAMP (µS)

Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp

(A)	30
				RG = 1kΩ , VGE = 5V, Vdd = 14V
CURRENT	25
	20
SWITCHING
	15
					TJ = 25°C
INDUCTIVE
	10
		TJ = 150°C
	5
,
SCIS		SCIS Curves valid for Vclamp Voltages of <390V
I	0
	0	2	4	6	8	10

L, INDUCTANCE (mHy)

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

(V)	1.30
		ICE = 6A			V	GE	= 3.7V
EMITTER VOLTAGE
				VGE = 4.0V
	1.26
	1.22
TO
COLLECTOR	1.18							VGE = 5.0V		VGE = 4.5V
			VGE = 8.0V
,
CE
V	1.14
	-75	-50	-25	0	25	50		75	100	125	150	175
			TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature

(V)	1.8
		ICE = 10A
VOLTAGE
	1.7
					VGE = 3.7V
				VGE = 4.0V
EMITTER	1.6
	1.5
TO
, COLLECTOR	1.4
									VGE = 4.5V
	1.3							VGE = 5.0V
							VGE = 8.0V
CE
V	1.2
	-75	-50	-25	0	25	50	75	100	125	150	175
				TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature

(A)	25
		VGE = 8.0V
CURRENT		VGE = 5.0V
	20	VGE = 4.5V
		VGE = 4.0V
TO EMITTER
	15	VGE = 3.7V
	10
, COLLECTOR
	5
CE					TJ = - 40°C
I
	0
	0	1.0	2.0	3.0	4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage vs Collector Current

(A)	25
		VGE = 8.0V
CURRENT		VGE = 5.0V
	20	VGE = 4.5V
		VGE = 4.0V
TO EMITTER
	15	VGE = 3.7V
	10
, COLLECTOR
	5
					TJ = 25°C
CE
I	0
	0	1.0	2.0	3.0	4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage vs Collector Current

ISL9V3036P3 / ISL9V3036S3S / ISL9V3036D3S

©2002 Fairchild Semiconductor Corporation

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002