KSE801
NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 @IC= 1.5 and 2.0A DC
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage
: KSE800/801
: KSE802/803
Collector-Emitter Voltage
: KSE800/801
: KSE802/803
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Breakdown Voltage
: KSE800/801
: KSE802/803
Collector Cutoff Current
: KSE800/801
: KSE802/803
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain : KSE800/802
: KSE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Base-Emitter On Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
V
CBO
V
CEO
VEBO
IC
IB
PC
TJ
T
STG
C
60
80
60
80
0.1
40
150
-55 ~ 150
=25°C)
BV
I
I
I
hFE
VCE
VBE(on)
5
4
CEO
CBO
EBO
CEO
(sat)
V
V
V
V
V
A
A
W
°C
°C
IC = 50mA, IB = 0
V
= 60V, IB = 0
CE
V
= 80V, IB = 0
CE
V
= Rated BV
CB
V
= Rated BV
CB
TC = 100°C
V
= 5V, IC = 0
BE
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
V
= 3V, IC = 4A
CE
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
V
= 3V, IC = 4A
CE
TO-126
1. Emitter 2. Collector 3. Base
60
80
, IE = 0
CEO
, IE = 0
CEO
750
750
100
100
100
100
500
2
2.5
2.8
3
1.2
2.5
3
V
V
µA
µA
µA
µA
mA
V
V
V
V
V
V
Rev. B
1999 Fairchild Semiconductor Corporation
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