HERMETIC SILICON PHOTOTRANSISTOR
L14N1 L14N2
PACKAGE DIMENSIONS
0.230 (5.84) 
0.209 (5.31) 
0.195 (4.96)
0.178 (4.52)
0.030 (0.76) |
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0.210 (5.34) |
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MAX |
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MAX |
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0.500 (12.7) MIN
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0.100 (2.54) |
0.100 (2.54) DIA. |
0.050 (1.27) |
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2 |
1 |
3 |
0.038 (.97) NOM |
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0.046 (1.16) |
Ø0.021 (0.53) 3X |
0.036 (0.92) |
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45° |
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NOTES:
1.Dimensions for all drawings are in inches (mm).
2.Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR 3
BASE 2
1 EMITTER
DESCRIPTION
The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES
•Hermetically sealed package
•Wide reception angle
•Device can be used as a photodiode by using the collector and base leads.
2001 Fairchild Semiconductor Corporation |
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DS300308 |
6/01/01 |
1 OF 4 |
www.fairchildsemi.com |
HERMETIC SILICON PHOTOTRANSISTOR
L14N1 L14N2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
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Parameter |
Symbol |
Rating |
Unit |
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Operating Temperature |
TOPR |
-65 to +125 |
°C |
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Storage Temperature |
TSTG |
-65 to +150 |
°C |
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Soldering Temperature (Iron)(3,4,5 and 6) |
TSOL-I |
240 for 5 sec |
°C |
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Soldering Temperature (Flow)(3,4 and 6) |
TSOL-F |
260 for 10 sec |
°C |
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Collector to Emitter Breakdown Voltage |
VCEO |
30 |
V |
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Collector to Base Breakdown Voltage |
VCBO |
40 |
V |
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Emitter to Base Breakdwon Voltage |
VEBO |
5 |
V |
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Power Dissipation (TA = 25°C)(1) |
PD |
300 |
mW |
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Power Dissipation (TC = 25°C)(2) |
PD |
600 |
mW |
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NOTE:
1.Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2.Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3.RMA flux is recommended.
4.Methanol or isopropyl alcohols are recommended as cleaning agents.
5.Soldering iron tip 1/16” (1.6mm) minimum from housing.
6.As long as leads are not under any stress or spring tension.
7.Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8.Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
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PARAMETER |
TEST CONDITIONS |
SYMBOL |
MIN |
TYP |
MAX |
UNITS |
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Collector-Emitter Breakdown |
IC = 10 mA, Ee = 0 |
BVCEO |
30 |
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— |
V |
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Emitter-Base Breakdown |
IE = 100 µ A, Ee = 0 |
BVEBO |
5 |
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— |
V |
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Collector-Base Breakdown |
IC = 100 µ A, Ee = 0 |
BVCBO |
40 |
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— |
V |
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Collector-Emitter Leakage |
VCE = 10 V, Ee = 0 |
ICEO |
— |
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100 |
nA |
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Collector-Base leakage |
VCB = 25 V, Ee = 0 |
ICBO |
— |
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25 |
nA |
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Reception Angle at 1/2 Sensitivity |
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θ |
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±40 |
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Degrees |
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On-State Collector Current L14N1 |
Ee = 0.5 mW/cm2, VCE = 5 V(7,8) |
IC(ON) |
1.0 |
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— |
mA |
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On-State Collector Current L14N2 |
Ee = 0.5 mW/cm2, VCE = 5 V(7,8) |
IC(ON) |
2.0 |
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mA |
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On-State Photodiode Current |
Ee = 1.5 mW/cm2, VCB = 5 V(7,8) |
ICB(ON) |
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5.0 |
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µ A |
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Rise Time |
IC = 10 mA, VCC = 5 V, RL =100 Ω |
tr |
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14 |
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µ s |
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Fall Time |
IC = 10 mA, VCC = 5 V, RL =100 Ω |
tf |
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16 |
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µ s |
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Saturation Voltage L14N1 |
IC = 0.8 mA, Ee = 3.0 mW/cm2(7,8) |
VCE(SAT) |
— |
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0.40 |
V |
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Saturation Voltage L14N2 |
IC = 1.6 mA, Ee = 3.0 mW/cm2(7,8) |
VCE(SAT) |
— |
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0.40 |
V |
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www.fairchildsemi.com |
2 OF 4 |
6/01/01 DS300308 |
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