Fairchild Semiconductor H11B2, H11B1, H11B3, H11B255, CNX48U Datasheet

PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION

The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

CNX48U H11B1 H11B2 H11B255 H11B3 MOC8080 TIL113

	FEATURES
	• High sensitivity to low input drive current	6
	• Meets or exceeds all JEDEC Registered Specifications
	• VDE 0884 approval available as a test option
	-add option .300. (e.g., H11B1.300)
	APPLICATIONS
	• Low power logic circuits	6

•Telecommunications equipment

•Portable electronics

•Solid state relays

•Interfacing coupling systems of different potentials and impedances.

1	6	SCHEMATIC
	1
	ANODE 1	6	BASE
	CATHODE 2	5	COLLECTOR
1	N/C 3	4	EMITTER

	Parameter	Symbol	Device	Value	Units
	TOTAL DEVICE	TSTG	All	-55 to +150	°C
	Storage Temperature
	Operating Temperature	TOPR	All	-55 to +100	°C
	Lead Solder Temperature	TSOL	All	260 for 10 sec	°C
	Total Device Power Dissipation @ TA = 25°C	PD	All	250	mW
	Derate above 25°C			3.3	mW/°C
	EMITTER	IF	All	100	mA
	Continuous Forward Current
	Reverse Voltage	VR	All	6	V
	Forward Current - Peak (300 µs, 2% Duty Cycle)	IF(pk)	All	3.0	A
	LED Power Dissipation @ TA = 25°C	PD	All	100	mW
	Derate above 25°C			1.8	mW/°C
	DETECTOR		CNX48U, TIL113	30
			H11B1, H11B2	25
		BVCEO	H11B3		V
	Collector-Emitter Breakdown Voltage
			H11B255	55
			MOC8080
			CNX48U, H11B1
			H11B2, H11B3	30	V
	Collector-Base Breakdown Voltage	BVCBO	TIL113
			H11B255	55	V
			MOC8080
	Emitter-Collector Breakdown Voltage	BVECO	All	7	V
	Detector Power Dissipation @ TA = 25°C	PD	All	150	mW
	Derate above 25°C			2.0	mW/°C

6/1/00 200042A

PHOTODARLINGTON OPTOCOUPLERS

CNX48U	H11B1 H11B2 H11B255 H11B3
MOC8080	TIL113

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

	Parameter	Test Conditions	Symbol	Device	Min	Typ**	Max	Unit
	EMITTER			H11B1, H11B2
		(IF = 10 mA)		H11B255	0.8	1.2	1.5
				MOC8080
	Input Forward Voltage		VF	TIL113				V
		(IF = 10 mA)		CNX48U		1.2	1.3
		(IF = 10 mA, TA = -55°C)		MOC8080	0.9	1.3	1.7
		(IF = 10 mA, TA = 100°C)			0.7	1.05	1.4
		(IF = 50 mA)		H11B3		1.35	1.5
	Reverse Leakage Current	(VR = 6 V)	IR	All		0.001	10	µA
	Capacitance	(VF = 0 V, f = 1.0 MHz)	C	All		50		pF
	DETECTOR	(IC = 1 mA, IF = 0)		CNX48U
					30	60
	Collector-Emitter	(IC = 100 µA, IF = 0)	BVCEO	TIL113
				H11B1, H11B2				V
	Breakdown Voltage	(IC = 10 mA, IF = 0)			25	60
				H11B3
		(IC = 100 µA, IF = 0)		H11B255	55	70
		(IC = 1 mA, IF = 0)		MOC8080
				CNX48U, H11B1
	Collector-Base	(IC = 100 µA, IE = 0)		H11B2, H11B3	30	100
			BVCBO	TIL113				V
	Breakdown Voltage
		(IC = 100 µA, IF = 0)		H11B255	55	100
				MOC8080
	Emitter-Collector	(IE = 100 µA, IB = 0)	BVECO	All	7	10		V
	Breakdown Voltage
	Collector-Emitter	(VCE = 10 V, Base Open)	ICEO	All		1	100	nA
	Dark Current
Note
** Typical values at TA = 25°C

6/1/00 200042A

PHOTODARLINGTON OPTOCOUPLERS

CNX48U

H11B1

H11B2

H11B255

H11B3

MOC8080

TIL113

TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

DC Characteristics

Test Conditions

Symbol

Device

Min

Typ**

Max

Units

(IF = 10 mA, VCE = 5 V)

MOC8080

50 (500)

H11B255

10 (100)

(IF = 10 mA, VCE = 1 V)

CNX48U

60 (600)

Collector Output

TIL113

30 (300)

Current(1)

IC (CTR)

mA (%)

H11B1

5 (500)

(IF = 1 mA, VCE = 5 V)

H11B2

2 (200)

H11B3

1 (100)

(IF = 1 mA, VCE = 1 V)

CNX48U

5 (500)

(IF = 0.5 mA, VCE = 1 V)

1.75 (350)

(IF =1 mA, IC = 1 mA)

H11B1, H11B2

1.0

H11B3, MOC8080

Saturation Voltage

(IF = 5 mA, IC = 10 mA)

VCE(sat)

CNX48U

1.0

V

(IF = 50 mA, IC = 50 mA)

H11B255

1.0

(IF = 8 mA, IC = 2 mA)

TIL113

1.25

AC Characteristics

ton

H11B1

25

(IC = 10 mA, VCE = 10 V)

H11B2

(RL = 100 1) (Fig.7)

toff

H11B255

18

H11B3

(IF = 10 mA, VCC = 5 V)

ton

3.5

(RE = 100 1), (RBE = 1M1)

toff

36

Switching Times

(Fig. 8)

µs

(IF = 1 mA, VCC = 5 V)

ton

CNX48U

70

(RE = 1k1), (RBE = 10M1)

toff

190

(Fig. 8)

(IF = 5 mA, VCC = 10 V)

ton

MOC8080

3.5

(RL = 100 1) (Fig.7)

toff

25

(IF = 200 mA, IC = 50 mA)

ton

0.35

5

(VCC = 10 V) (RL = 100 1)

TIL113

toff

55

100

(Fig.7)

ISOLATION CHARACTERISTICS

Characteristic

Test Conditions

Symbol

Min

Typ**

Max

Units

Input-Output Isolation Voltage(2)

(II-O 6 1 µA, Vrms, t = 1 min.)

5300

Vac(rms)

Isolation Resistance(2)

(VI-O = 500 VDC)

RISO

1011

1

Isolation Capacitance(2)

(VI-O = , f = 1 MHz)

CISO

0.8

pf

Note

** Typical values at TA = 25°C

6/1/00 200042A