Fairchild Semiconductor HUFA75617D3, HUFA75617D3S Datasheet

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HUFA75617D3, HUFA75617D3S

	Data Sheet	December 2001

16A, 100V, 0.090 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

JEDEC TO-251AA	JEDEC TO-252AA
SOURCE
DRAIN		DRAIN
GATE		(FLANGE)
		(FLANGE)
	GATE


DRAIN	SOURCE
DRAIN	SOURCE
(FLANGE)
HUFA75617D3	HUFA75617D3S

Symbol

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.090Ω, VGS = 10V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Electrical Models

-Spice and SABER Thermal Impedance Models

-www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

Ordering Information

PART NUMBER	PACKAGE	BRAND

HUFA75617D3	TO-251AA	75617D

HUFA75617D3S	TO-252AA	75617D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75617D3ST.

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
		HUFA75617D3,
		HUFA75617D3S	UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDSS	100	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	100	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	16	A
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	11	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . UIS	Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	64	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	0.43	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . TL	300	oC
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

NOTE: TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA75617D3 Rev. B

HUFA75617D3

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

100

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

µA

= 90V, V

= 0V, T

= 150oC

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

Drain to Source On Resistance

rDS(ON)

ID = 16A, VGS = 10V (Figure 9)

0.080

0.090

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

Rθ JC

TO-251, TO-252

2.34

oC/W

Thermal Resistance Junction to

Rθ JA

100

oC/W

Ambient

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 50V, ID = 16A

VGS = 10V,

Turn-On Delay Time

td(ON)

RGS = 12Ω

Rise Time

(Figures 18, 19)

Turn-Off Delay Time

td(OFF)

Fall Time

Turn-Off Time

tOFF

108

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 50V,

ID = 16A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

Ig(REF) = 1.0mA

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

(Figures 13, 16, 17)

1.3

1.6

Gate to Source Gate Charge

Qgs

2.7

Gate to Drain "Miller" Charge

Qgd

6.4

CAPACITANCE SPECIFICATIONS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

570

f = 1MHz

Output Capacitance

COSS

125

(Figure 12)

Reverse Transfer Capacitance

CRSS

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS

Source to Drain Diode Voltage	VSD	ISD = 16A	-	-	1.25	V
		ISD = 7A	-	-	1.00	V
Reverse Recovery Time	trr	ISD = 16A, dISD/dt = 100A/µs	-	-	80	ns
Reverse Recovered Charge	QRR	ISD = 16A, dISD/dt = 100A/µs	-	-	170	nC

HUFA75617D3 Rev. B

HUFA75617D3

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8

DISSIPATION	0.6
	0.4

POWER	0.2
POWER
	0						150
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

	18
(A)	15
(A)
CURRENT	12					VGS = 10V
	9

, DRAIN	6
, DRAIN
D
I
	3
	0	50	75	100	125	150	175
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

FIGURE 1.			NORMALIZED POWER DISSIPATION vs CASE				FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
			TEMPERATURE				CASE TEMPERATURE
		2	DUTY CYCLE - DESCENDING ORDER
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
		1	0.2
	IMPEDANCE		0.1
NORMALIZED			0.05
			0.02
			0.01
								PDM
		0.1
,	THERMAL
Zθ JC								t1
Zθ JC								t2
								NOTES:
								DUTY FACTOR: D = t1/t2
				SINGLE PULSE				PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01		10-4	10-3	10-2	10-1	100	101
		10-5		10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

	300					TC = 25oC
	200					TC = 25oC
	200					FOR TEMPERATURES
						FOR TEMPERATURES
(A)						ABOVE 25oC DERATE PEAK
(A)						CURRENT AS FOLLOWS:
CURRENT	100					CURRENT AS FOLLOWS:
CURRENT							175 - TC

						I = I25
PEAK,							150
PEAK,		VGS = 10V
		VGS = 10V
DM
I	TRANSCONDUCTANCE
	TRANSCONDUCTANCE
	MAY LIMIT CURRENT
	IN THIS REGION
	10
	10-5	10-4	10-3	10-2	10-1	100	101
				t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

HUFA75617D3 Rev. B

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