Fairchild Semiconductor GF1A, GF1K, GF1J, GF1G, GF1D Datasheet

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GF1A-GF1M
GF1A-GF1M, Rev. E
GF1A - GF1M
1.0 Ampere Glass Passivated Rectifier
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor International
Features
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
Symbol Parameter Value Units
I
O
Average Rectified Current
@ T
L
= 125
°
C
1.0 A
i
f(surge)
Peak Forward Surge Current
8.3 ms single hal f-sine-wave
Superimposed on rated l oad (JEDEC method)
30 A
P
D
Total Device Dissipation
Derate above 25
°
C
2.0
13
W
mW/
°
C
R
θ
JA
Thermal Resistanc e, Junction to Ambient ** 80
°
C/W
R
θ
JC
Thermal Resistance, Junction to Case ** 26
°
C/W
T
stg
Storage Temperature Range -65 to +175
°
C
T
J
Operating Junction Temperature -65 to +175
°
C
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Vo ltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 800 V
DC Reverse Voltage (Rated V
R
)
50 100 200 400 600 800 1000 V
Maximum Reverse Current
@ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
5.0
50
µ
A
µ
A
Maximum Forward Voltage @ 1.0 A 1.0 1.2 V
Maximum Reverse Recove ry Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
2.0
µ
S
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
15 pF
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
2
1
0.208 (5.283)
0.188 (4.775)
0.181 (4.597)
0.157 (3.988)
0.096 (2.438)
0.078 (1.981)
0.062 (1.575)
0.055 (1.397)
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.114 (2.896)
0.098 (2.489)
+
3.93
3.73
1.67
1.47
2.38
2.18
5.49
5.29
Minimum Recommende d
Land Pattern
GF1A-GF1M
GF1A-GF1M, Rev. E
Surface Mount Glass Passivated Rectifier
(continued)
T ypical Characteristics
Reverse Characteris tics
0 20406080100120140
0.001
0.01
0.1
1
10
100
PERCENT OF RATED PEA K REVERSE VOL TAGE (%)
REVERSE CURRENT ( A)
µ
T = 125 C
º
A
T = 25 C
º
A
T = 75 C
º
A
Typical Junction Capacitance
0.01 0.1 1 10 100
1
2
5
10
20
50
100
REVERSE VOLTAGE (V)
JUNCTIO N CAPACIT A NCE (pF)
Forward Charact eristics
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.01
0.1
1
10
100
FORWARD VOL TAGE (V)
FORWARD CURRE NT (A)
T = 25 C
º
A
Pulse Width = 300
µ
S
2% Duty Cycle
Forward Current Derating Curve
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
LEAD TEMPERATURE ( C)
FORWARD CURRE NT (A)
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUN T ED
ON 0.2 x 0.2 "
(5.0 x 5.0 m m)
COPPE R PAD AREAS
º
Non-Repetitive Surge Current
1 2 5 10 20 50 100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT (A)
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