Fairchild Semiconductor HUFA75309D3, HUFA75309D3S, HUFA75309P3 Datasheet

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HUFA75309P3, HUFA75309D3, HUFA75309D3S

	Data Sheet	December 2001

19A, 55V, 0.070 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75309.

Ordering Information

PART NUMBER	PACKAGE	BRAND

HUFA75309P3	TO-220AB	75309P

HUFA75309D3	TO-251AA	75309D

HUFA75309D3S	TO-252AA	75309D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA75309D3ST.

Features

•19A, 55V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Models

-SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

	JEDEC STYLE TO-220AB			JEDEC TO-251AA
		SOURCE	DRAIN		SOURCE
		DRAIN	DRAIN		DRAIN
		GATE	(FLANGE)		GATE
DRAIN
DRAIN
(FLANGE)

	JEDEC TO-252AA
GATE		DRAIN
GATE		(FLANGE)

SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B

HUFA75309P3, HUFA75309D3, HUFA75309D3S

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
		HUFA75309P3, HUFA75309D3,
		HUFA75309D3S	UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDSS	55	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	55	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	19	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	55	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	0.37	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . TL	300	oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

Zero Gate Voltage Drain Current

IDSS

VDS = 50V, VGS = 0V

µA

= 45V, V

= 0V, T = 150oC

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

Drain to Source On Resistance

rDS(ON)

ID = 19A, VGS = 10V (Figure 9)

0 .060

0.070

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

Rθ JC

(Figure 3)

2.7

oC/W

Thermal Resistance Junction to Ambient

Rθ JA

TO-220

oC/W

TO-251, TO-252

100

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 30V, ID 19A,

RL = 1.58Ω , VGS = 10V,

Turn-On Delay Time

td(ON)

RGS = 27Ω

Rise Time

Turn-Off Delay Time

td(OFF)

Fall Time

Turn-Off Time

tOFF

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 30V,

ID 19A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

13.5

RL = 1.58Ω

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

Ig(REF) = 1.0mA

0.68

0.85

(Figure13)

Gate to Source Gate Charge

Qgs

1.8

Reverse Transfer Capacitance

Qgd

HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B

Fairchild Semiconductor HUFA75309D3, HUFA75309D3S, HUFA75309P3 Datasheet

HUFA75309P3, HUFA75309D3, HUFA75309D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance	CISS	VDS = 25V, VGS = 0V,	-	350	-	pF
		f = 1MHz
Output Capacitance	COSS	f = 1MHz	-	150	-	pF
Output Capacitance	COSS	(Figure 12)	-	150	-	pF
Reverse Transfer Capacitance	CRSS		-	39	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS

Source to Drain Diode Voltage	VSD	ISD = 19A	-	-	1.25	V
Reverse Recovery Time	trr	ISD = 19A, dISD/dt = 100A/ s	-	-	50	ns
Reverse Recovered Charge	QRR	ISD = 19A, dISD/dt = 100A/ s	-	-	70	nC

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8

DISSIPATION	0.6
	0.4

POWER	0.2
POWER
	0							175
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

	20
(A)	15
,DRAIN CURRENT	10
,DRAIN CURRENT	5
D	5
I
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE				CASE TEMPERATURE
		2	DUTY CYCLE - DESCENDING ORDER
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
		1	0.2
NORMALIZED	IMPEDANCE		0.1
			0.05
			0.02
			0.01
								PDM
		0.1
,	THERMAL	0.1
,
Zθ JC								t1
Zθ JC								t2
								NOTES:
								DUTY FACTOR: D = t1/t2
		0.01		SINGLE PULSE				PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01
			10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B

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