Fairchild Semiconductor H21A6, H21A5, H21A4 Datasheet

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Fairchild Semiconductor H21A6, H21A5, H21A4 Datasheet

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

 

 

 

PACKAGE DIMENSIONS

0.249 (6.35)

0.243 (6.15)

0.972 (24.7)

0.957 (24.3)

0.472 (12.0)

Ø 0.133 (3.4)

Ø 0.126 (3.2)

0.457 (11.6)

(2X)

C

 

L

 

+

D

C

 

 

 

 

L

E

+

0.39 (1.00)

 

 

 

 

0.34 (0.85)

0.755 (19.2)

0.745 (18.9)

0.129 (3.3)

0.119 (3.0)

0.103 (2.60) NOM

 

Optical

 

0.433 (11.0)

C

 

L

 

0.422 (10.7)

 

0.125 (3.2)

0.315 (8.0)

 

0.119 (3.0)

 

 

 

 

C

 

.295 (7.5)

L

0.110 (2.8)

 

.272 (6.9)

 

0.091 (2.3)

 

 

PIN 1 ANODE

 

 

PIN 2 CATHODE

2

3

PIN 3 COLLECTOR

1

4

PIN 4 EMITTER

 

0.020 (0.51) (SQ)

 

NOTES:

1.Dimensions for all drawings are in inches (mm).

2.Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.

DESCRIPTION

SCHEMATIC

1

4

2

3

The H21A series are gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.

FEATURES

Opaque housing

Low cost

.035” apertures

High IC(ON)

2001 Fairchild Semiconductor Corporation

 

 

DS300291

6/05/01

1 OF 4

www.fairchildsemi.com

PHOTOTRANSISTOR

OPTICAL INTERRUPTER SWITCH

H21A4

H21A5

H21A6

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

 

Parameter

Symbol

Rating

Unit

 

 

Operating Temperature

TOPR

-55 to +100

°C

 

 

Storage Temperature

TSTG

-55 to +100

°C

 

 

Soldering Temperature (Iron)(2,3 and 4)

TSOL-I

240 for 5 sec

°C

 

 

Soldering Temperature (Flow)(2 and 3)

TSOL-F

260 for 10 sec

°C

 

 

INPUT (EMITTER)

IF

50

mA

 

 

Continuous Forward Current

 

 

 

 

 

 

 

Reverse Voltage

VR

6

V

 

 

Power Dissipation (1)

PD

100

mW

 

 

OUTPUT (SENSOR)

VCEO

55

V

 

 

Collector to Emitter Voltage

 

 

Emitter to Collector Voltage

VECO

4.5

V

 

 

Collector Current

IC

20

mA

 

 

Power Dissipation (TC = 25°C)(1)

PD

150

mW

 

NOTE:

1.Derate power dissipation linearly 1.67 mW/°C above 25°C.

2.RMA flux is recommended.

3.Methanol or isopropyl alcohols are recommended as cleaning agents.

4.Soldering iron tip 1/16” (1.6mm) minimum from housing.

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)

 

PARAMETER

TEST CONDITIONS

SYMBOL

DEVICES

MIN

TYP

MAX

UNITS

 

 

INPUT (EMITTER)

IF = 60 mA

VF

All

1.7

V

 

 

Forward Voltage

 

 

 

 

 

 

 

 

 

 

 

Reverse Breakdown Voltage

IR = 10 µ A

VR

All

6.0

µA

 

 

Reverse Leakage Current

VR = 3 V

IR

All

1.0

µA

 

 

OUTPUT (SENSOR)

IF = 100 µ A, Ee = 0

BVECO

All

6.0

V

 

 

Emitter to Collector Breakdown

 

 

 

 

 

 

 

 

 

 

 

Collector to Emitter Breakdown

IC = 1 mA, Ee = 0

BVCEO

All

55

V

 

 

Collector to Emitter Leakage

VCE = 45 V, Ee = 0

ICEO

All

100

nA

 

 

COUPLED

IF = 5 mA, VCE = 5 V

 

H21A4

0.15

 

 

 

 

 

H21A5

0.30

 

 

 

 

 

 

H21A6

0.60

 

 

 

On-State Collector Current

IF = 20 mA, VCE = 5 V

IC(ON)

H21A4

1.0

mA

 

 

H21A5

2.0

 

 

 

 

 

H21A6

4.0

 

 

 

 

IF = 30 mA, VCE = 5 V

 

H21A4

1.9

 

 

 

 

 

H21A5

3.0

 

 

 

 

 

 

H21A6

5.5

 

 

 

Saturation Voltage

IF = 20 mA, IC = 1.8 mA

VCE(SAT)

H21A5/6

0.40

V

 

 

IF = 30 mA, IC = 1.8 mA

H21A4

0.40

V

 

 

 

 

 

 

Turn-On Time

IF = 30 mA, VCC = 5 V, RL = 2.5 KΩ

ton

All

8

µs

 

 

Turn-Off Time

IF = 30 mA, VCC = 5 V, RL = 2.5 KΩ

toff

All

50

µs

 

www.fairchildsemi.com

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6/05/01 DS300291

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