6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M |
H11N2-M |
H11N3-M |
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PACKAGE |
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SCHEMATIC |
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ANODE 1 |
6 |
VCC |
6 |
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6 |
CATHODE 2 |
5 |
GND |
1 |
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1 |
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VO |
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3 |
4 |
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6
1
DESCRIPTION
The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse s haping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility.
Truth Table
Input |
Output |
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H |
L |
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L |
H |
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FEATURES
•High data rate, 5 MHz typical (NRZ)
•Free from latch up and oscilliation throughout voltage and temperature ranges.
•Microprocessor compatible drive
•Logic compatible output sinks 16 mA at 0.5 V maximum
•Guaranteed on/off threshold hysteresis
•Wide supply voltage capability, compatible with all popular logic systems
•High common mode transient immunity, 2000 V/µs minimum
•Fast switching tr = 7.5ns typical, tf = 12ns typical
•Underwriter Laboratory (UL) recognized—file #E90700
•VDE recognized – File#102497 – Add option V (e.g., H11N1VM)
APPLICATIONS
•Logic to logic isolator
•Programmable current level sensor
•Line receiver—eliminate noise and transient problems
•A.C. to TTL conversion—square wave shaping
•Interfaces computers with peripherals
•Isolated power MOS driver for power supplies
© 2003 Fairchild Semiconductor Corporation |
Page 1 of 9 |
4/14/03 |
6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M |
H11N2-M |
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H11N3-M |
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ABSOLUTE MAXIMUM RATINGS |
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Parameters |
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Symbol |
Device |
Value |
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Units |
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TOTAL DEVICE |
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Storage Temperature |
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TSTG |
All |
-55 to +150 |
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°C |
Operating Temperature |
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TOPR |
All |
-40 to +85 |
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°C |
Lead Solder Temperature |
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TSOL |
All |
260 for 10 sec |
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°C |
Total Device Power Dissipation @ 25°C |
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PD |
All |
250 |
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mW |
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Derate Above 25°C |
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2.94 |
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mW/°C |
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EMITTER |
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Continuous Forward Current |
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IF |
All |
30 |
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mA |
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Reverse Voltage |
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VR |
All |
6 |
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V |
Forward Current - Peak (1 µs pulse, 300 pps) |
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IF(pk) |
All |
1.0 |
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A |
LED Power Dissipation 25°C Ambient |
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PD |
All |
120 |
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mW |
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Derate Linearly From 25°C |
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1.41 |
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mW/°C |
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DETECTOR |
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Detector Power Dissipation @ 25°C |
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PD |
All |
150 |
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mW |
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Derate Linearly from 25°C |
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1.76 |
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mW/°C |
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V45 Allowed Range |
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VO |
All |
0 to 16 |
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V |
V65 Allowed Range |
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VCC |
All |
0 to 16 |
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V |
I4 Output Current |
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IO |
All |
50 |
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mA |
ELECTRICAL CHARACTERISTICS (TA = 0-70°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
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Parameters |
Test Conditions |
Symbol |
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Device |
Min |
Typ* |
Max |
Units |
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EMITTER |
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Input Forward Voltage |
IF = 10 mA |
VF |
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All |
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1.4 |
2 |
V |
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IF = 0.3 mA |
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0.75 |
1.25 |
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Reverse Current |
VR = 5 V |
IR |
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All |
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10 |
µA |
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Capacitance |
V = 0, f = 1.0 MHz |
CJ |
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All |
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100 |
pF |
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DETECTOR |
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Operating Voltage Range |
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VCC |
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All |
4 |
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15 |
V |
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Supply Current |
IF = 0, VCC = 5V |
ICC(off) |
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All |
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6 |
10 |
mA |
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Output Current, High |
IF = 0.3mA, VCC = VO = 15V |
IOH |
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All |
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100 |
µA |
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*Typical values at TA = 25°C |
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© 2003 Fairchild Semiconductor Corporation |
Page 2 of 9 |
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4/14/03 |
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6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS
H11N1-M |
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H11N2-M |
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H11N3-M |
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TRANSFER CHARACTERISTICS |
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DC Characteristics |
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Test Conditions |
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Symbol |
Device |
Min |
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Typ* |
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Max |
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Units |
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Supply Current |
IF = 10mA, VCC = 5V |
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ICC(on) |
All |
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6.5 |
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10 |
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mA |
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Output Voltage, low |
RL=270Ω,VCC=5V, IF=IF(on) max. |
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VOL |
All |
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0.5 |
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V |
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RL=270Ω, VCC = 5V |
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H11N1-M |
0.8 |
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3.2 |
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IF(on) |
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Turn-On Threshold Current |
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H11N2-M |
2.3 |
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5 |
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mA |
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note 1 |
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H11N3-M |
4.1 |
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10 |
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Turn-Off Threshold Current |
RL=270Ω, VCC = 5V |
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IF(off) |
All |
0.3 |
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mA |
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Hysteresis Ratio |
RL=270Ω, VCC = 5V |
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IF(off)/IF(on) |
All |
0.65 |
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0.95 |
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AC Characteristics |
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Test Conditions |
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Symbol |
Device |
Min |
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Typ |
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Max |
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Units |
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SWITCHING SPEED |
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Propagation delay time |
C=120pF, tP=1µs, RE: Note 2 |
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tPHL |
All |
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100 |
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330 |
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ns |
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High to Low |
Fig. 1 |
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Rise Time |
C=120pF, tP=1µs, RE: Note 2 |
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tr |
All |
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7.5 |
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ns |
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Fig. 1 |
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Propagation delay time |
C=120pF, tP=1µs, RE: Note 2 |
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tPLH |
All |
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150 |
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330 |
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ns |
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Low to High |
Fig. 1 |
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Fall time |
C=120pF, tP=1µs, RE: Note 2 |
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tf |
All |
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12 |
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ns |
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Fig. 1 |
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Data Rate |
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All |
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5 |
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MHz |
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ISOLATION CHARACTERISTICS |
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Parameters |
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Test Conditions |
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Symbol |
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Min |
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Typ* |
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Max |
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Units |
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Input-Output Isolation Voltage |
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f = 60 Hz, t =1 sec. |
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VISO |
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7500 |
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VPEAK |
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Isolation Capacitance |
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VI-O = 0V, f = 1 MHz |
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CISO |
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0.4 |
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0.6 |
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pF |
Isolation Resistance |
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VI-O = ±500 VDC |
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RISO |
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1011 |
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Ω |
*Typical values at TA = 25°C |
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NOTES:
1.Maximum IF(ON) is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
2.H11N1: RE = 910Ω H11N2: RE = 560Ω H11N3: RE = 240Ω
© 2003 Fairchild Semiconductor Corporation |
Page 3 of 9 |
4/14/03 |
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