KSB744/744A
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
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TO-126 |
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1. Emitter |
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2.Collector 3.Base |
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PNP Epitaxial Silicon Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
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Collector-Base Voltage |
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-70 |
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V |
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VCEO |
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Collector-Emitter Voltage |
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: KSB744 |
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-45 |
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V |
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: KSB744A |
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-60 |
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V |
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VEBO |
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Emitter-Base Voltage |
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-5 |
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V |
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IC |
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Collector Current (DC) |
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-3 |
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A |
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ICP |
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*Collector Current (Pulse) |
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-5 |
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A |
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IB |
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Base Current |
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-0.6 |
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A |
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PC |
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Collector Dissipation (Ta=25° C) |
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1 |
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W |
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PC |
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Collector Dissipation (TC=25° C) |
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10 |
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W |
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TJ |
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Junction Temperature |
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150 |
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° C |
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TSTG |
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Storage Temperature |
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-55 ~ 150 |
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° C |
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* PW≤ 10ms, Duty Cycle≤ |
50% |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Test Condition |
Min. |
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Typ. |
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Max. |
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Units |
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ICBO |
Collector Cut-off Current |
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VCB = -45V, IE = 0 |
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-1 |
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A |
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IEBO |
Emitter Cut-off Current |
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VEB = -3V, IC = 0 |
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-1 |
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A |
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hFE1 |
* DC Current Gain |
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VCE = -5V, IC = -20mA |
30 |
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120 |
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hFE2 |
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VCE = -5V, IC = -0.5A |
60 |
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100 |
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320 |
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VCE(sat) |
* Collector-Emitter Saturation Voltage |
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IC = -1.5A, IC = -0.15A |
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-0.5 |
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-2 |
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V |
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VBE(sat) |
* Base-Emitter Saturation Voltage |
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IC = -1.5A, IB = -0.15A |
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-0.8 |
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-2 |
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V |
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fT |
Current Gain Bandwidth Product |
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VCE = -5V, IC = -0.1A |
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45 |
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MHz |
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Cob |
Output Capacitance |
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VCB = -10V, IE = 0 |
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60 |
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pF |
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f = 1MHz |
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* Pulse Test: PW≤ 350 s, Duty Cycle≤ 2% Pulsed |
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hFE Cassification |
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Classification |
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R |
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O |
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Y |
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hFE2 |
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60 ~ 120 |
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100 ~ 200 |
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160 ~ 320 |
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KSB744/744A
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
Typical Characteristics
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-1.6 |
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CURRENT |
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IB = -20mA |
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-1.2 |
IB = -18mA |
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IB |
= -16mA |
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IB = -14mA |
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IB = -12mA |
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COLLECTOR |
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-0.8 |
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IB = -10mA |
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IB = -8mA |
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IB = -6mA |
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IB = -4mA |
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Ic[A], |
-0.4 |
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IB = -2mA |
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0 |
-10 |
-20 |
-30 |
-40 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
VOLTAGE |
-10 |
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IC = 10·I B |
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(sat)[V] SATURATION |
-1 |
VBE(sat) |
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-0.1 |
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BE |
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(sat)[V],V |
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VCE(sat) |
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CE |
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V |
-0.01 |
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-0.001 |
-0.01 |
-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
PRODUCT |
1000 |
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VCE=5V |
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BANDWIDTHGAIN |
100 |
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[MHz], CURRENT |
10 |
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1 |
-0.1 |
-1 |
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f |
-0.01 |
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T |
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IC[A], COLLECTOR CURRENT |
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Figure 5. Current Gain Bandwidth Product
GAIN |
-1000 |
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KSB744/744A |
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VCE = -5V |
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-100 |
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CURRENT |
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DC, |
-10 |
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FE |
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h |
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-1 |
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-0.001 |
-0.01 |
-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. DC current Gain
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1000 |
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IE = 0 |
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f=1.0MHz |
CAPACITANCE |
100 |
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Cob[pF], |
10 |
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1 |
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-1 |
-10 |
-100 |
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
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-10 |
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Ic MAX(Pulse) |
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Ic MAX(DC) |
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100us |
CURRENT |
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DC |
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1ms |
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Dissipation |
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-1 |
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10ms |
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Limited |
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[A], COLLECTOR |
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s/b |
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Limited |
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-0.1 |
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KSB744 VCEOMAX |
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C |
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I |
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KSB744A VCEOMAX
-0.01
-1 |
-10 |
-100 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
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