KSH44H11
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix) |
1 |
D-PAK 1 |
I-PAK |
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Straight Lead (I-PAK, “- I” Suffix) |
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Electrically Similar to Popular KSE44H |
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1.Base 2.Collector |
3.Emitter |
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•Fast Switching Speeds
•Low Collector Emitter Saturation Voltage
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
VCEO |
Collector-Emitter Voltage |
80 |
V |
VEBO |
Emitter-Base Voltage |
5 |
V |
IC |
Collector Current (DC) |
8 |
A |
ICP |
Collector-Current (Pulse) |
16 |
A |
PC |
Collector Dissipation (TC=25° C) |
20 |
W |
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Collector Dissipation (Ta=25° C) |
1.75 |
W |
TJ |
Junction Temperature |
150 |
° C |
TSTG |
Storage Temperature |
- 65 ~ 150 |
° C |
Electrical Characteristics TC=25° C unless otherwise noted
Symbol |
Parameter |
Test Condition |
Min. |
Typ. Max. |
Units |
VCEO(sus) |
* Collector-Emitter Sustaining Voltage |
IC = 30mA, IB = 0 |
80 |
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V |
ICEO |
Collector Cut-off Current |
VCE = 80V, IB = 0 |
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10 |
A |
IEBO |
Emitter Cut-off Current |
VBE = 5V, IC = 0 |
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50 |
A |
hFE |
DC Current Gain |
VCE = 1V, IC = 2A |
60 |
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VCE = 1V, IC = 4A |
40 |
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VCE(sat) |
Collector-Emitter Saturation Voltage |
IC = 8A, IB = 0.4A |
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1 |
V |
VBE(on) |
Base-Emitter On Voltage |
IC = 8A, IB = 0.8A |
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1.5 |
V |
fT |
Current Gain Bandwidth Product |
VCE = 10V, IC = 0.5A |
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50 |
MHz |
Cob |
Output Capacitance |
VCB =10V, f = 1MHz |
|
130 |
pF |
tON |
Turn On Time |
IC = 5A |
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300 |
ns |
t |
Storage Time |
IB1 = - IB2 = 0.5A |
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500 |
ns |
STG |
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tF |
Fall Time |
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140 |
ns |
* Pulse Test: PW≤ 300 s, Duty Cycle≤ 2%
KSH44H11
©2002 Fairchild Semiconductor Corporation |
Rev. A3, October 2002 |
Typical Characteristics
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1000 |
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VCE = 1V |
CURRENT GAIN |
100 |
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, DC |
10 |
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FE |
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h |
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1 |
0.1 |
1 |
10 |
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0.01 |
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IC[A], COLLECTOR CURRENT |
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Figure 1. DC current Gain
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25 |
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DISSIPATION |
20 |
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15 |
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[W], POWER |
10 |
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5 |
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C |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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0 |
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TC[oC], CASE TEMPERATURE |
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Figure 3. Power Derating
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100 |
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KSH44H11 |
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CURRENT |
ICP(max) |
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10 |
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100 |
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s |
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IC(max) |
500 |
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1ms |
s |
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COLLECTOR |
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5ms |
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1 |
DC |
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[A], |
0.1 |
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C |
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I |
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0.01 |
10 |
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100 |
1000 |
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1 |
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VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe Operating Area
©2002 Fairchild Semiconductor Corporation |
Rev. A3, October 2002 |
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