Fairchild Semiconductor KSC945 Datasheet

KSC945

Audio Frequency Amplifier & High

Frequency OSC.

•Complement to KSA733

•Collector-Base Voltage : VCBO=60V

•High Current Gain Bandwidth Product : fT=300MHz (TYP)

•Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1	TO-92
1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25° C unless otherwise noted

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	50	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	150	mA
PC	Collector Power Dissipation	250	mW
TJ	Junction Temperature	150	° C
TSTG	Storage Temperature	-55 ~ 150	° C

Electrical Characteristics Ta=25° C unless otherwise noted

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
BVCBO	Collector-Base Breakdown Voltage	IC=100µ A, IE=0	60			V
BVCEO	Collector-Emitter Breakdown Voltage	IC=10mA, IB=0	50			V
BVEBO	Emitter-Base Breakdown Voltage	IE=10µ A, IC=0	5			V
ICBO	Collector Cut-off Current	VCB=40V, IE=0			0.1	µ A
IEBO	Emitter Cut-off Current	VEB=3V, IC=0			0.1	µ A
hFE	DC Current Gain	VCE=6V, IC=1.0mA	40		700
VCE (sat)	Collector-Emitter Saturation Voltage	IC=100mA, IB=10mA		0.15	0.3	V
fT	Current Gain Bandwidth Product	VCE=6V, IC=10mA		300		MHz
Cob	Output Capacitance	VCB=6V, IE=0, f=1MHz		2.5		pF
NF	Noise Figure	VCE=6V, IC=0.5mA		4.0		dB
		f=1KHz, RS=500Ω

hFE Classification

Classification	R	O	Y	G	L
hFE	40 ~ 80	70 ~ 140	120 ~ 240	200 ~ 400	350 ~	700

KSC945

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

Typical Characteristics

	100
CURRENT				IB = 400 A
	80					IB = 350 A
							IB = 300 A
								IB = 250 A
	60
COLLECTOR
									IB = 200 A
	40								IB = 150 A
									IB = 100 A
[mA],
	20
C
I									IB	= 50	A
	0	2	4	6	8	10	12	14	16	18	20
	0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

	1000
				VCE = 6V
GAIN
, DC CURRENT	100
FE
h
	10	10	100	1000
	1
		IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

	100
				IE = 0
				f = 1MHz
CAPACITANCE	10
[pF],	1
ob
C
	0.1	10	100	1000
	1

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Output Capacitance

KSC945

	100
						VCE = 6V
CURRENT	10
[mA], COLLECTOR	1
C
I
	0.1	0.2	0.4	0.6	0.8	1.0	1.2
	0.0

VBE[V], BASE-EMITTER VOLTAGE

Figure 2. Transfer Characteristic

VOLTAGE	10
				IC = 10 IB
SATURATION	1	VBE(sat)
(sat)[V],	0.1
CE		VCE(sat)
(sat), V
BE
V	0.01
		10	100	1000
	1
		IC[mA], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

PRODUCT	1000
				VCE = 6V
GAIN BANDWIDTH	100
[MHz], CURRENT	10
	1
T
f	0.1	1	10	100
		IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002