Fairchild Semiconductor KSC2258A, KSC2258 Datasheet

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KSC2258/2258A

High Voltage General Amplifier

TV Video Output Amplifier

• High BVCEO

 

 

 

1

 

 

 

 

TO-126

 

 

 

 

1. Emitter

2.Collector 3.Base

NPN Epitaxial Silicon Transistor

 

 

 

 

 

 

 

 

Absolute Maximum Ratings TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Parameter

 

 

 

Value

 

 

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

VCBO

 

Collector-Base Voltage

 

 

 

 

 

 

 

 

 

 

 

: KSC2258

 

 

 

250

 

 

 

V

 

 

: KSC2258A

 

 

 

300

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

VCEO

 

Collector-Emitter Voltage

 

 

 

 

 

 

 

 

 

 

 

: KSC2258

 

 

 

250

 

 

 

V

 

 

: KSC2258A

 

 

 

300

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

VEBO

 

Emitter-Base Voltage

 

 

 

6

 

 

 

V

IC

 

Collector Current (DC)

 

 

 

100

 

 

 

mA

ICP

 

Collector Current (Pulse)

 

 

 

150

 

 

 

mA

PC

 

Collector Dissipation (TC=25° C)

 

 

 

4

 

 

 

W

TJ

 

Junction Temperature

 

 

 

150

 

 

 

° C

TSTG

 

Storage Temperature

 

- 55 ~ 150

 

 

 

° C

Electrical Characteristics TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Parameter

Test Condition

 

Min.

 

Typ.

 

Max.

Units

 

 

 

 

 

 

 

 

 

 

 

 

BVEBO

 

Emitter-Base Breakdown Voltage

IE = 0.1mA, IC = 0

 

6

 

 

 

 

 

V

ICER

 

Collector Cut-off Current

VCE = 250V, RBE = 100KΩ

 

 

 

 

 

100

µ A

hFE1

 

DC Current Gain

VCE = 20V, IC = 40mA

 

40

 

 

 

 

 

 

hFE2

 

 

VCE = 50V, IC = 5mA

 

30

 

 

 

 

 

 

VCE(sat)

 

Collector-Emitter Saturation Voltage

IC = 50mA, IB = 5mA

 

 

 

 

 

1.2

V

VBE(on)

 

Base-Emitter On Voltage

VCE = -20V, IC = 40mA

 

 

 

 

 

1.2

V

fT

 

Current Gain Bandwidth Product

VCE = 10V, IC = 10mA

 

 

 

100

 

 

 

MHz

Cob

 

Output Capacitance

VCB = 50V, f = 1MHz

 

 

 

3

 

4.5

pF

KSC2258/2258A

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Fairchild Semiconductor KSC2258A, KSC2258 Datasheet

Typical Characteristics

 

100

 

 

IB=2.0mA

 

IB=1.8mA

 

 

 

 

 

 

 

 

 

 

 

IB=1.6mA

CURRENT

 

 

 

 

 

IB=1.4mA

80

 

 

 

 

IB=1.2mA

 

 

 

 

 

IB=1.0mA

 

 

 

 

 

IB=0.8mA

 

 

 

 

 

IB=0.6mA

COLLECTOR

60

 

 

 

 

 

 

 

 

 

 

IB=0.4mA

40

 

 

 

 

 

 

 

 

 

 

 

[mA],

 

 

 

 

 

IB=0.2mA

20

 

 

 

 

 

C

 

 

 

 

 

 

I

 

 

 

 

 

 

 

0

 

 

 

 

 

 

0

2

4

6

8

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

 

10

 

 

 

VOLTAGE

 

 

 

IC = 10 IB

 

 

 

 

SATURATION

1

 

 

 

 

VCE(sat)

 

 

(sat) [V],

0.1

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

V

 

 

 

 

 

0.01

 

 

 

 

1

10

100

1000

 

 

IC[mA], COLLECTOR CURRENT

 

Figure 3. Collector-Emitter Saturation Voltage

PRODUCT

1000

 

 

 

VCB = 10 V

 

 

 

 

GAIN BANDWIDTH

100

 

 

 

 

 

[MHz], CURRENT

10

 

 

1

 

 

T

1

10

100

f

 

 

 

IC[mA], COLLECTOR CURRENT

 

Figure 5. Current Gain Bandwidth Product

GAIN

1000

 

 

 

KSC2258/2258A

 

 

 

 

VCE = 10V

 

 

100

 

 

 

 

CURRENT

 

 

 

 

 

DC,

10

 

 

 

 

FE

 

 

 

 

 

h

 

 

 

 

 

 

1

 

 

 

 

 

0.1

1

10

 

100

 

 

IC [mA], COLLECTOR CURRENT

 

 

Figure 2. DC current Gain

f = 1 MHz

10

COB(pF), CAPACITANCE

1

1

10

100

VCB[V], COLLECTOR BASE VOLTAGE

Figure 4. Collector Output Capacitance

 

5

DISSIPATION

4

3

POWER[W],

1

 

2

D

 

P

 

 

0

0

25

50

75

100

125

150

175

200

225

250

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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