H22B3
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H22B1 H22B2 H22B3
PACKAGE DIMENSIONS
0.472 (12.0)
0.457 (11.6)
C
L
.133 (3.38)
.073 (1.85)
0.249 (6.35)
0.243 (6.15)
0.125 (3.2)
0.119 (3.0)
.295 (7.5)
.272 (6.9)
+
E+
2
1
D
0.129 (3.3)
0.119 (3.0)
C
L
3
4
0.020 (0.51) (SQ)
C
0.39 (1.00)
0.34 (0.85)
0.433 (11.0)
0.422 (10.7)
.315 (8.00)
L
Optical
0.110 (2.8)
0.091 (2.3)
PIN 1 ANODE
PIN 2 CATHODE
PIN 3 COLLECTOR
PIN 4 EMITTER
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
C
L
SCHEMATIC
1
2
4
3
DESCRIPTION
The H22B1, H22B2 and H22B3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a
plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light
rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching
the output from an “ON” to an “OFF” state.
FEATURES
• Opaque housing
• Low cost
• .035" apertures
• High I
© 2002 Fairchild Semiconductor Corporation
C(ON)
Page 1 of 6
6/13/02
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H22B1 H22B2 H22B3
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3 and 4)
(2 and 3)
T
T
T
SOL-I
T
SOL-F
OPR
STG
-55 to +100 °C
-55 to +100 °C
240 for 5 sec °C
260 for 10 sec °C
INPUT (EMITTER)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
I
F
V
R
P
D
50 mA
6V
100 mW
OUTPUT (SENSOR)
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation (T
= 25°C)
C
(1)
V
V
CEO
ECO
I
C
P
D
30 V
6V
40 mA
150 mW
NOTES:
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
© 2002 Fairchild Semiconductor Corporation
Page 2 of 6
6/13/02
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