Fairchild Semiconductor ISL9V3040S3S, ISL9V3040P3, ISL9V3040D3S Datasheet

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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, spe cifically a s a coil d rive r. Internal diode s provide voltage clamping without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49362

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at T

• Logic Level Gate Drive

= 25oC

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

April 2003

Package

JEDEC TO-263AB

D²-Pak

JEDEC TO-252AA

D-Pak

COLLECTOR

(FLANGE)

JEDEC TO-220AB

JEDEC TO-262AA

Device Maximum Ratings T

= 25°C unless otherwise noted

Symbol

GATE

COLLECTOR

EMITTER

Symbol Parameter Ratings Units

BV BV

SCIS25

SCIS150

C25

C110

GEM

STG

CER ECS

pkg

Collector to Emitter Breakdown Voltage (IC = 1 mA) 430 V Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V At Starting TJ = 25°C, I At Starting TJ = 150°C, I

= 14.2A, L = 3.0 mHy 300 mJ

SCIS

= 10.6A, L = 3.0 mHy 170 mJ

SCIS

Collector Current Continuous, At TC = 25°C, See Fig 9 21 A Collector Current Continuous, At TC = 110°C, See Fig 9 17 A Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total TC = 25°C 150 W

Power Dissipation Derating T Operating Junction Temperature Range -40 to 175 °C

> 25°C 1.0 W/°C

Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

Max Lead T emp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

V3040D ISL9V3040D3S TO-252AA 16mm 2500 V3040S ISL9V3040S3S TO-263AB 24mm 800 V3040P ISL9V3040P3 TO-220AA - V3040S ISL9V3040S3 TO-262AA - -

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

CER

ECS

R R

Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

CER

Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

CES

Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

ECS

Gate to Emitter Breakdown Voltage I

GES

Collector to Emitter Leakage Current V

Emitter to Collector Leakage Current VEC = 24V , See

Series Gate Resistance - 70 - Ω

Gate to Emitter Resistance 10K - 26K Ω

= 1KΩ, See Fig. 15

= -40 to 150°C

= 0, See Fig. 15

= -40 to 150°C

= 25°C

= ± 2mA ±12 ±14 - V

GES

= 250V,

CER

= 1KΩ, See

Fig. 11

= 25°C - - 25 µA

= 150°C - - 1 mA

TC = 25°C - - 1 mA

Fig. 11

= 150°C - - 40 mA

370 400 430 V

390 420 450 V

30 - - V

On State Characteristics

CE(SAT)

Collector to Emitter Saturation Voltage IC = 6A,

= 4V

Collector to Emitter Saturation Voltage IC = 10A,

= 4.5V

Collector to Emitter Saturation Voltage IC = 15A,

= 4.5V

= 25°C,

- 1.25 1.60 V

See Fig. 3 T

= 150°C,

See Fig. 4

= 150°C - 1.90 2.20 V

- 1.58 1.80 V

Dynamic Characteristics

G(ON)

GE(TH)

GEP

Switching Characteristics

d(ON)R

d(OFF)L

Gate Charge IC = 10A, VCE = 12V,

Gate to Emitter Threshold Voltage IC = 1.0mA,

Gate to Emitter Plateau Voltage IC = 10A,

Current T urn-On Delay Time-Resistive V Current Rise Time-Resistive - 2.1 7 µs

Current T urn-Off Delay Time-Inductive V

Current Fall Time-Inductive - 2.8 15 µs

SCIS Self Clamped Inductive Switching T

= 5V, See Fig. 14

= V

See Fig. 10

= 12V

= 14V, RL = 1Ω,

= 5V, RG = 1KΩ

= 25°C, See Fig. 12

= 300V, L = 500µHy,

= 5V, RG = 1KΩ

= 25°C, See Fig. 12

= 25°C, L = 3.0 mHy,

= 1KΩ, VGE = 5V, See

Fig. 1 & 2

GE,

= 25°C 1.3 - 2.2 V = 150°C 0.75 - 1.8 V

-17-nC

-3.0- V

-0.74µs

- 4.8 15 µs

- - 300 mJ

Thermal Characteristics

Thermal Resistance Junction-Case TO-252,TO-263,TO-220,TO-

θJC

262

--1.0°C/W

Typical Performance Curves (Continued)

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

, INDUCTIVE SWITCHING CURRENT (A)

SCIS Curves valid for V

SCIS

TJ = 150°C

RG = 1kΩ, VGE = 5V,Vdd = 14V

Voltages of <430V

clamp

, TIME IN CLAMP (µS)

CLP

TJ = 25°C

20017515001255025 75 100

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

1.30

1.26

1.22

1.18

, COLLECTOR TO EMITTER VOLTAGE (V)

1.14

ICE = 6A

VGE = 8.0V

-75 25-25 17512575-50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

VGE = 3.7V

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

, INDUCTIVE SWITCHING CURRENT (A)

SCIS

TJ = 150°C

SCIS Curves valid for V

0102468

RG = 1kΩ, VGE = 5V,Vdd = 14V

Voltages of <430V

clamp

L, INDUCTANCE (mHy)

TJ = 25°C

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

1.8 ICE = 10A

1.7

1.6

1.5

1.4

1.3

, COLLECTOR TO EMITTER VOLTAGE (V)

1.2

-75 25-25 17512575-50 0 50 100 150

VGE = 3.7V

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

VGE = 8.0V VGE = 5.0V

VGE = 4.5V VGE = 4.0V VGE = 3.7V

, COLLECTOR TO EMITTER CURRENT (A)

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = - 40°C

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

VGE = 8.0V VGE = 5.0V

VGE = 4.5V VGE = 4.0V VGE = 3.7V

, COLLECTOR TO EMITTER CURRENT (A)

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

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