Fairchild Semiconductor H11D4, H11D2, H11D1, 4N38 Datasheet

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES

H11D1

H11D2

H11D3

H11D4

4N38

•High Voltage

-H11D1, H11D2, BVCER = 300 V

-H11D3, H11D4, BVCER = 200 V

•High isolation voltage

-5300 VAC RMS - 1 minute

-7500 VAC PEAK - 1 minute

•Underwriters Laboratory (UL) recognized File# E90700

APPLICATIONS

•Power supply regulators

•Digital logic inputs

•Microprocessor inputs

•Appliance sensor systems

•Industrial controls

ANODE 1		6	BASE
CATHODE	2	5	COLLECTOR
N/C	3	4	EMITTER

ABSOLUTE MAXIMUM RATINGS

		Parameter	Symbol	Value	Units
		TOTAL DEVICE	TSTG	-55 to +150	°C
		Storage Temperature
		Operating Temperature	TOPR	-55 to +100	°C
		Lead Solder Temperature	TSOL	260 for 10 sec	°C
		Total Device Power Dissipation @ TA = 25°C	PD	260	mW
		Derate above 25°C		3.5	mW/°C
		EMITTER	IF	80	mA
		*Forward DC Current
		*Reverse Input Voltage	VR	6.0	V
		*Forward Current - Peak (1µs pulse, 300pps)	IF(pk)	3.0	A
		*LED Power Dissipation @ TA = 25°C	PD	150	mW
		Derate above 25°C		1.41	mW/°C

8/9/00 200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

ABSOLUTE MAXIMUM RATINGS (Cont.)

Parameter

Symbol

Value

Units

DETECTOR

300

mW

*Power Dissipation @ TA = 25°C

PD

Derate linearly above 25°C

4.0

mW/°C

H11D1 - H11D2

300

*Collector to Emitter Voltage

H11D3 - H11D4

VCER

200

4N38

80

H11D1 - H11D2

300

V

*Collector Base Voltage

H11D3 - H11D4

VCBO

200

4N38

80

*Emitter to Collector Voltage

H11D1 - H11D2

VECO

7

H11D3 - H11D4

Collector Current (Continuous)

100

mA

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

Characteristic

Test Conditions

Symbol

Device

Min

Typ**

Max

Unit

EMITTER

(IF = 10 mA)

VF

ALL

1.15

1.5

V

*Forward Voltage

Forward Voltage Temp.

!VF

ALL

-1.8

mV/°C

Coefficient

!TA

Reverse Breakdown Voltage

(IR = 10 µA)

BVR

ALL

6

25

V

Junction Capacitance

(VF = 0 V, f = 1 MHz)

CJ

ALL

50

pF

(VF = 1 V, f = 1 MHz)

ALL

65

pF

*Reverse Leakage Current

(VR = 6 V)

IR

ALL

0.05

10

µA

DETECTOR

(RBE = 1 M")

BVCER

H11D1/2

300

*Breakdown Voltage

(IC = 1.0 mA, IF = 0)

H11D3/4

200

Collector to Emitter

(No RBE) (IC = 1.0 mA)

BVCEO

4N38

80

H11D1/2

300

V

*Collector to Base

(IC = 100 µA, IF = 0)

BVCBO

H11D3/4

200

4N38

80

Emitter to Base

(IE = 100 µA , IF = 0)

BVEBO

4N38

7

Emitter to Collector

BVECO

ALL

7

10

(VCE = 200 V, IF = 0, TA = 25°C)

H11D1/2

100

nA

*Leakage Current

(VCE = 200 V, IF = 0, TA = 100°C)

ICER

250

µA

Collector to Emitter

(VCE = 100 V, IF = 0, TA = 25°C)

H11D3/4

100

nA

(RBE = 1 M")

(VCE = 100 V, IF = 0, TA = 100°C)

250

µA

(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)

ICEO

4N38

50

nA

Notes

*Parameters meet or exceed JEDEC registered data (for 4N38 only)

**All typical values at TA = 25°C

8/9/00 200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

TRANSFER CHARACTERISTICS

	DC Characteristic	Test Conditions	Symbol	Device	Min	Typ**	Max	Unit
	EMITTER			H11D1
	Current Transfer Ratio	(IF = 10 mA, VCE = 10 V)		H11D2	2 (20)
		(RBE = 1 M")	CTR	H11D3				mA (%)
	Collector to Emitter
				H11D4	1 (10)
		(IF = 10 mA, VCE = 10 V)		4N38	2 (20)
		(IF = 10 mA, IC = 0.5 mA)		H11D1/2/3/4		0.1	0.40
	*Saturation Voltage	(RBE = 1 M")	VCE (SAT)					V
		(IF = 20 mA, IC = 4 mA)		4N38			1.0

TRANSFER CHARACTERISTICS

	Characteristic	Test Conditions	Symbol	Device	Min	Typ**		Max	Unit
	SWITCHING TIMES	(VCE =10 V, ICE = 2 mA)	ton	ALL		5
	Non-Saturated Turn-on Time								µs
	Turn-off Time	(RL = 100 ")	toff	ALL		5

ISOLATION CHARACTERISTICS

	Characteristic	Test Conditions		Symbol		Device	Min	Typ**	Max	Unit
	Isolation Voltage	(II-O #$1 µA, 1 min.)		VISO		ALL	5300			(VACRMS)
							7500			(VACPEAK)
	Isolation Resistance	(V	= 500 VDC)	R	ISO	ALL	1011			"
		I-O
	Isolation Capacitance		(f = 1 MHz)	CISO		ALL		0.5		pF

Notes

*Parameters meet or exceed JEDEC registered data (for 4N38 only)

**All typical values at TA = 25°C

OV ATL (V)GE

FORARDW

V F

Fig.1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

TA = 55˚C

1.3

TA = 25˚C

1.2

1.1

TA = 100˚C

1.0

1

10

100

IF - LED FORWARDCURRENT (mA)

CER - CURRENTOUTPUT

INORMALIZED

10

1

0.1

0.01

Fig.2 Normalized Output Characteristics

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 50 mA

IF = 10 mA

IF = 5 mA

0.1

1

10

100

VCE - COLLECTOR VOLTAGE (V)

8/9/00 200046A